High Temperature Performance, Reliability and Simulation of GaAs Mesfets with CVD Diamond Heat Sinks
Keyword(s):
ABSTRACTAn investigation of the temperature stability and high temperature characteristics of GaAs FETs on CVD diamond heat sinks was carried out by modeling the high temperature electrical characteristics for GaAs MESFETs and by experimentally measuring the elevated temperature performance. The thermal characteristics were determined experimentally using infrared microscopy techniques. The thermal measurements by infrared microscopy were correlated with results of a finite element analysis calculation of the GaAs FET thermal distribution. Reliability testing at 230°C resulted in an MTF of approximately 2000 hours.
2013 ◽
Vol 734-737
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pp. 2287-2291
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2010 ◽
Vol 156-157
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pp. 117-122
2015 ◽
Vol 744-746
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pp. 1316-1319
1996 ◽
Vol 36
(9)
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pp. 1177-1189
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