Fabrication of Hollow High Aspect Ratio Metal Microstructure Arrays

1992 ◽  
Vol 260 ◽  
Author(s):  
J. M. Calvert ◽  
J. H. Georger ◽  
M. L Rebbert ◽  
M. A. Anderson ◽  
D. Park ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Analytical Techniques ◽  
Optical Lithography ◽  
Aspect Ratios ◽  
Substrate Dissolution ◽  
Metal Microstructure ◽  
Regular Arrays ◽  
Hollow Metal

ABSTRACTA process has been developed to produce regular arrays of hollow metal microstructures on substrates of choice. Optical lithography was used to define high aspect ratio structures in photoresist. The resist structures were selectively metallized by electroless (EL) deposition such that metal was deposited only on the sidewalls of the resist and on the surface of the substrate. Dissolution of the polymeric photoresist resulted in regular arrays of hollow metal cylinders and cones with geometries and structure spacings determined by the original resist structures. Characterization of metallized microstructures using surface analytical techniques and SEM is presented. Arrays of microstructures with 500–1000 Å thick EL Ni walls and aspect ratios (height/tip diameter) of 8:1 are shown.

scholarly journals Fabrication of Ultra-High Aspect Ratio (>420:1) Al2O3 Nanotube Arraysby Sidewall TransferMetal Assistant Chemical Etching

Micromachines ◽  
2020 ◽  
Vol 11 (4) ◽  
pp. 378 ◽  
Author(s):  
Hailiang Li ◽  
Changqing Xie
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Atomic Layer ◽  
Nanotube Arrays ◽  
Al2o3 Layer ◽  
Practical Applications ◽  
Aspect Ratios ◽  
Layer Deposition

We report a robust, sidewall transfer metal assistant chemical etching scheme for fabricating Al2O3 nanotube arrays with an ultra-high aspect ratio. Electron beam lithography followed by low-temperature Au metal assisted chemical etching (MacEtch) is used to pattern high resolution, high aspect ratio, and vertical silicon nanostructures, used as a template. This template is subsequently transferred by an atomic layer deposition of the Al2O3 layer, followed by an annealing process, anisotropic dry etching of the Al2O3 layer, and a sacrificial silicon template. The process and characterization of the Al2O3 nanotube arrays are discussed in detail. Vertical Al2O3 nanotube arrays with line widths as small as 50 nm, heights of up to 21 μm, and aspect ratios up to 420:1 are fabricated on top of a silicon substrate. More importantly, such a sidewall transfer MacEtch approach is compatible with well-established silicon planar processes, and has the benefits of having a fully controllable linewidth and height, high reproducibility, and flexible design, making it attractive for a broad range of practical applications.

scholarly journals Strength Analysis of Alternative Airframe Layouts of Regional Aircraft on the Basis of Automated Parametrical Models

Aerospace ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 80
Author(s):  
Dmitry V. Vedernikov ◽  
Alexander N. Shanygin ◽  
Yury S. Mirgorodsky ◽  
Mikhail D. Levchenkov
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
High Performance ◽  
Strength Analysis ◽  
Labor Input ◽  
Aerodynamic Loading ◽  
Aspect Ratios ◽  
Wide Range ◽  
Parametrical Design

This publication presents the results of complex parametrical strength investigations of typical wings for regional aircrafts obtained by means of the new version of the four-level algorithm (FLA) with the modified module responsible for the analysis of aerodynamic loading. This version of FLA, as well as a base one, is focused on significant decreasing time and labor input of a complex strength analysis of airframes by using simultaneously different principles of decomposition. The base version includes four-level decomposition of airframe and decomposition of strength tasks. The new one realizes additional decomposition of alternative variants of load cases during the process of determination of critical load cases. Such an algorithm is very suitable for strength analysis and designing airframes of regional aircrafts having a wide range of aerodynamic concepts. Results of validation of the new version of FLA for a high-aspect-ratio wing obtained in this work confirmed high performance of the algorithm in decreasing time and labor input of strength analysis of airframes at the preliminary stages of designing. During parametrical design investigation, some interesting results for strut-braced wings having high aspect ratios were obtained.

Fabrication and electrical characterization of high aspect ratio poly-silicon filled through-silicon vias

2012 ◽  
Vol 22 (5) ◽  
pp. 055021 ◽  
Author(s):  
Pradeep Dixit ◽  
Tapani Vehmas ◽  
Sami Vähänen ◽  
Philippe Monnoyer ◽  
Kimmo Henttinen
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Electrical Characterization ◽  
Through Silicon Vias ◽  
Poly Silicon ◽  
Silicon Vias

scholarly journals A novel fabrication technique for high-aspect-ratio nanopillar arrays for SERS application

RSC Advances ◽  
2020 ◽  
Vol 10 (73) ◽  
pp. 45037-45041
Author(s):  
Tianli Duan ◽  
Chenjie Gu ◽  
Diing Shenp Ang ◽  
Kang Xu ◽  
Zhihong Liu
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Fabrication Technique ◽  
Novel Technique ◽  
Aspect Ratios ◽  
Nanopillar Arrays

A novel technique is demonstrated for the fabrication of silicon nanopillar arrays with high aspect ratios.

Analysis and characterization of high-resolution and high-aspect-ratio imaging fiber bundles

2015 ◽  
Vol 54 (32) ◽  
pp. 9422 ◽  
Author(s):  
Nojan Motamedi ◽  
Salman Karbasi ◽  
Joseph E. Ford ◽  
Vitaliy Lomakin
Keyword(s):  
High Resolution ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Fiber Bundles ◽  
Ratio Imaging

scholarly journals Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels

2020 ◽  
Author(s):  
Jihong Yim ◽  
Oili Ylivaara ◽  
Markku Ylilammi ◽  
Virpi Korpelainen ◽  
Eero Haimi ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
High Aspect Ratio ◽  
Atomic Layer ◽  
Profile Measurement ◽  
Aspect Ratios ◽  
New Information ◽  
Layer Deposition ◽  
Rectangular Channels ◽  
Saturation Profile

<p>ABSTRACT: Atomic layer deposition (ALD) raises global interest through its unparalleled conformality. This work describes new microscopic lateral high-aspect-ratio (LHAR) test structures for conformality analysis of ALD. The LHAR structures are made of silicon and consist of rectangular channels supported by pillars. Extreme aspect ratios even beyond 10 000:1 enable investigations where the adsorption front does not penetrate to the end of the channel, thus exposing the saturation profile for detailed analysis. We use the archetypical trimethylaluminum (TMA)-water ALD process to grow alumina as a test vehicle to demonstrate the applicability, repeatability and reproducibility of the saturation profile measurement and to provide a benchmark for future saturation profile studies. Through varying the TMA reaction and purge times, we obtained new information on the surface chemistry characteristics and the chemisorption kinetics of this widely studied ALD process. We propose new saturation profile related classifications and terminology. </p>

Focused Ion Beam: Advanced Technique for Device Modification

1994 ◽  
Vol 337 ◽  
Author(s):  
Marsha Abramo ◽  
Loren Hahn
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Materials ◽  
Advanced Technique ◽  
Aspect Ratios ◽  
Chip Technology ◽  
Design Changes ◽  
Critical Feedback

ABSTRACTFocused ion beam (FIB) technology is used to modify circuits for early-product design debug; it also has the capability to create probe points to underlying metallurgy, allowing device characterization while maintaining full functionality. These techniques provide critical feedback to designers for rapid verification of proposed design changes.Current FIB technology has its limitations because of redeposition of sputtered material; this phenomena may induce vertical electrical shorts and limit the achievable aspect ratio of a milled via to 6:1. Therefore, innovative enhancements are required to provide modification capability on planar chip technology which may utilize up to five levels of metallurgy. The ability to achieve high-aspect-ratio milling is required to access underlying circuitry. Vias with aspect ratios of 10:1 are necessary in some cases.This paper reviews a gas-assisted etching (GAE) process that enhances FIB milling by volatilizing the sputtered material, examines the results obtained from utilizing the GAE process for high-aspect-ratio milling, and discusses selectivity of semiconductor materials (silicon, aluminum, tungsten and silicon dioxide).

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