Characterization of SiGe Epitaxial Films Using Ellipsometry and X-Ray Fluorescence

1992 ◽  
Vol 259 ◽  
Author(s):  
L.V. Munukutla ◽  
K. Evans ◽  
M.H. Liaw
Keyword(s):  
Thin Films ◽  
Fluorescence Spectroscopy ◽  
Film Thickness ◽  
Epitaxial Films ◽  
Atomic Percent ◽  
X Rays ◽  
X Ray ◽  
Direct Excitation ◽  
Suitable Technique

ABSTRACTEllipsometry in combination with X-ray fluorescence spectroscopy is demonstrated as a suitable technique to characterize SiGe thin films (180–800 Å) rapidly and nondestructively. Film thickness values extracted from ellipsometry are in agreement with the measurements obtained using other techniques such as TEM, SIMS, and RBS. The measured Ge concentration obtained by direct excitation of X-rays in several SiGe films ranging from 6 to 20 atomic percent, shows good correlation with the values obtained using RBS and SIMS.

Preparation and characterization of laser-ablated multicomponent chalcogenide thin films

1990 ◽  
Vol 5 (3) ◽  
pp. 511-514 ◽  
Author(s):  
Didarul Islam ◽  
C. E. Brient ◽  
R. L. Cappelletti
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Thermal Evaporation ◽  
Analytical Techniques ◽  
X Rays ◽  
Single Source ◽  
X Ray ◽  
Chalcogenide Thin Films ◽  
Scanning Electron

The preparation of multicomponent chalcogenide glassy thin films from bulk targets by laser ablation is described. The film stoichiometries are characterized by proton-induced x-ray emission (PIXE). Compared to single source thermal evaporation, laser ablation is found to preserve starting stoichiometries in the resulting thin films far more accurately. Thermally evaporated films were studied both by PIXE and by energy dispersed x rays (EDX) produced in a scanning electron microscope, and the results of these two analytical techniques compare well.

The Characterization of Thin Films and Layered Structures Using X-RAY Absorption and Reflection at Grazing Incidence

1984 ◽  
Vol 37 ◽  
Author(s):  
S. M. Heald ◽  
J. M. Tranquada ◽  
D. O. Welch ◽  
H. Chen
Keyword(s):  
Thin Films ◽  
Fine Structure ◽  
High Resolution ◽  
Grazing Incidence ◽  
X Rays ◽  
X Ray ◽  
Surface And Interface ◽  
Interface Structures ◽  
X Ray Absorption

AbstractX-rays at grazing incidence have a short, controllable penetration depth and are well suited as a probe of surface and interface structures. This paper examines the possibility applying grazing-incidence reflectivity and Extended X-Ray Absorption Fine Structure (EXAFS) measurements to such systems. Results are presented for an Al-Cu couple for which both high resolution reflectivity and interface EXAFS measurements are made. The latter results are the first interface specific EXAFS data to be reported. Distinct changes in both signals are observed upon annealing, demonstrating the potential of the techniques.

Strain State Evolution and Thickness-Dependent Properties of Epitaxial La0.7Sr0.3MnO3 Thin Films

2012 ◽  
Vol 460 ◽  
pp. 214-217
Author(s):  
Ying Meng ◽  
Shi Bin Lu ◽  
Juan Gao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Strain State ◽  
Epitaxial Film ◽  
Resistivity Measurement ◽  
Epitaxial Films ◽  
Reciprocal Space ◽  
X Ray ◽  
State Evolution

La0.7Sr0.3MnO3(LSMO) films 35-350nm thick have been grown on (001)LaAlO3 (LAO) substrates. The strain state evolution was examined fully by x-ray reciprocal space maps, in order to clarify its impact on the thickness-dependent properties of the films. It was found that LSMO epitaxial films have properties which is from partially strained to fully relaxed with film thickness increasing on the same substrate. Resistivity measurement shows that the relaxed film has higher resistivity than that of the strained film, because the relaxed film contains the high deficiency density. In this paper, however, the relaxed property of the same thickness LSMO epitaxial film grown on the different substrates is also discussed.

scholarly journals Characterization of SiGe thin films using a laboratory X-ray instrument

2013 ◽  
Vol 46 (4) ◽  
pp. 898-902 ◽  
Author(s):  
Tatjana Ulyanenkova ◽  
Maksym Myronov ◽  
Andrei Benediktovitch ◽  
Alexander Mikhalychev ◽  
John Halpin ◽  
...  
Keyword(s):  
Epitaxial Films ◽  
Reciprocal Space ◽  
X Rays ◽  
Reciprocal Space Mapping ◽  
X Ray ◽  
Material Parameters ◽  
X Ray Scattering ◽  
Laboratory Source ◽  
Nondestructive Characterization

The technique of reciprocal space mapping using X-rays is a recognized tool for the nondestructive characterization of epitaxial films. X-ray scattering from epitaxial Si0.4Ge0.6 films on Si(100) substrates using a laboratory X-ray source was investigated. It is shown that a laboratory source with a rotating anode makes it possible to investigate the material parameters of the super-thin 2–6 nm layers. For another set of partially relaxed layers, 50–200 nm thick, it is shown that from a high-resolution reciprocal space map, conditioned from diffuse scattering on dislocations, it is possible to determine quantitatively from the shape of a diffraction peak (possessing no thickness fringes) additional parameters such as misfit dislocation density and layer thickness as well as concentration and relaxation.

X-ray diffraction from inhomogeneous thin films of nanometre thickness: modelling and experiment

2003 ◽  
Vol 36 (1) ◽  
pp. 154-157 ◽  
Author(s):  
F. Bocquet ◽  
P. Gergaud ◽  
O. Thomas
Keyword(s):  
Experimental Data ◽  
Thin Films ◽  
Film Thickness ◽  
Thin Layer ◽  
Peak Position ◽  
Diffraction Peak ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Comparison With Experimental Data

The diffraction of X-rays by a thin layer (of the order of a few nanometres) with a gradient in interplanar spacings is considered. It is shown that optical coherence over the film thickness leads to diffraction peak positions that no longer obey Bragg's law. Although a fitting of the diffracted intensity is indeed still possible, this has direct consequences on the applicability of more straightforward analysis methods, such as the sin2ψ method, which rely on diffraction peak positions. The intensity and peak position calculations are supported by a comparison with experimental data from a (001) Fe/GaAs thin (3 nm) epitaxic film.

Digital x-ray mapping of nanometer-size supported bimetallic catalysts

1988 ◽  
Vol 46 ◽  
pp. 530-531
Author(s):  
L. T. Germinario
Keyword(s):  
Background Radiation ◽  
Metal Cluster ◽  
Single Element ◽  
Beam Diameter ◽  
X Rays ◽  
X Ray ◽  
Major Interest ◽  
Induced Changes

Understanding the role of metal cluster composition in determining catalytic selectivity and activity is of major interest in heterogeneous catalysis. The electron microscope is well established as a powerful tool for ultrastructural and compositional characterization of support and catalyst. Because the spatial resolution of x-ray microanalysis is defined by the smallest beam diameter into which the required number of electrons can be focused, the dedicated STEM with FEG is the instrument of choice. The main sources of errors in energy dispersive x-ray analysis (EDS) are: (1) beam-induced changes in specimen composition, (2) specimen drift, (3) instrumental factors which produce background radiation, and (4) basic statistical limitations which result in the detection of a finite number of x-ray photons. Digital beam techniques have been described for supported single-element metal clusters with spatial resolutions of about 10 nm. However, the detection of spurious characteristic x-rays away from catalyst particles produced images requiring several image processing steps.

scholarly journals Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Deposition Rate ◽  
Optical Constant ◽  
Photoelectron Spectroscopy ◽  
Linear Array ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
X Ray ◽  
Sio2 Thin Film

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

The Growth and Characterization of Germanium-Carbon Alloy Thin Films

1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Vacuum Chamber ◽  
Optical Band Gap ◽  
High Vacuum ◽  
Optical Absorption Spectroscopy ◽  
Alloy Thin Film ◽  
New Materials ◽  
X Ray

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.

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