Kinetics of Light-Induced Degradation of a-Si:H Solar Cells Compared to I-Layer Films

1992 ◽  
Vol 258 ◽  
Author(s):  
X.R. Li ◽  
S. Wagner ◽  
M. Bennett ◽  
S. Fonash
Keyword(s):  
Solar Cells ◽  
Defect Density ◽  
Monochromatic Light ◽  
Performance Parameters ◽  
Electron Hole ◽  
Different Temperatures ◽  
Electron Hole Pair ◽  
Pair Generation ◽  
Kinetics Of ◽  
High Intensity Light

ABSTRACTWe report the CPM defect density of a-Si:H material and the performance characteristics of pin solar cells during high-intensity light-soaking. In one group of experiments we compared the effects of soaking with monochromatic light from a Kr+ laser to white light from a Xe arc lamp. The effects are identical for the same electron-hole pair generation rate. In a second group of experiments we light-soaked at the two different temperatures of 50°C and 90°C. At 90°C the defect density saturates at a lower value than at 50°C, and correspondingly the cell performance parameters saturate at higher values.

Ti3C2-MXene/Bismuth Ferrite Nanohybrids for Efficient Degradation of Organic Dye and Colorless Pollutant

2019 ◽  
Author(s):  
Ayesha Tariq ◽  
M. Abdullah Iqbal ◽  
S. Irfan Ali ◽  
Muhammad Z. Iqbal ◽  
Deji Akinwande ◽  
...  
Keyword(s):  
Surface Area ◽  
Low Cost ◽  
Bismuth Ferrite ◽  
Organic Dye ◽  
Two Dimensional ◽  
Electron Hole ◽  
Photocatalytic Application ◽  
Electron Hole Pair ◽  
Pair Generation ◽  
Photocatalytic Applications

<p>Nanohybrids, made up of Bismuth ferrites/Carbon allotropes, are extensively used in photocatalytic applications nowadays. Our work proposes a nanohybrid system composed of Bismuth ferrite nanoparticles with two-dimensional (2D) MXene sheets namely, the BiFeO<sub>3</sub> (BFO)/Ti<sub>3</sub>C<sub>2</sub> (MXene) nanohybrid for enhanced photocatalytic activity. We have fabricated the BFO/MXene nanohybrid using simple and low cost double solvent solvothermal method. The SEM and TEM images show that the BFO nanoparticles were attached onto the MXene surface and in the inter-layers of two-dimensional (2D) MXene sheets. The photocatalytic application is tested for the visible light irradiation which showed the highest efficiency among all pure-BFO based photocatalysts, i.e. 100% degradation in 42 min for organic dye (Congo Red) and colorless aqueous pollutant (acetophenone) in 150 min, respectively. The present BFO-based hybrid system exhibited the large surface area of 147 m<sup>2</sup>g<sup>-1</sup>measured via Brunauer-Emmett-Teller (BET) sorption-desorption technique, and is found to be largest among BFO and its derivatives. Also, the photoluminescence (PL) spectra indicate large electron-hole pair generation. Fast and efficient degradation of organic molecules is supported by both factors; larger surface area and lower electron-hole recombination rate. The BFO/MXene nanohybrid presented here is a highly efficient photocatalyst compared to other nanostructures based on pure BiFeO<sub>3</sub> which makes it a promising candidate for many future applications.</p>

Electrical Invasiveness of Grinding and Polishing Silicon Integrated Circuits Down to 1 μm Remaining Silicon Thickness

2016 ◽  
Author(s):  
Robert Chivas ◽  
Scott Silverman ◽  
Michael DiBattista ◽  
Ulrike Kindereit
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Electron Hole ◽  
Analysis Techniques ◽  
Silicon Integrated Circuits ◽  
Electron Hole Pair ◽  
Pair Generation ◽  
Silicon Thickness ◽  
Performance Timing ◽  
Grinding And Polishing

Abstract Anticipating the end of life for IR-based failure analysis techniques, a method of global backside preparation to ultra-thin remaining silicon thickness (RST) has been developed. When the remaining silicon is reduced, some redistribution of stress is expected, possibly altering the performance (timing) of integrated circuits in addition to electron-hole pair generation. In this work, a study of the electrical invasiveness due to grinding and polishing silicon integrated circuits to ultra-thin (&lt; 5 um global, ~ 1 um local) remaining thickness is presented.

Electron-hole pair generation energy in gallium arsenide byxand γ photons

2002 ◽  
Vol 92 (3) ◽  
pp. 1248-1255 ◽  
Author(s):  
Giuseppe Bertuccio ◽  
Diego Maiocchi
Keyword(s):  
Gallium Arsenide ◽  
Hole Pair ◽  
Electron Hole ◽  
Electron Hole Pair ◽  
Pair Generation

Annealing Kinetics of Amorphous Silicon Alloy Solar Cells Made at Various Deposition Rates

2001 ◽  
Vol 664 ◽  
Author(s):  
Baojie Yana ◽  
Jeffrey Yanga ◽  
Kenneth Lord ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Frequency ◽  
Room Temperature ◽  
Defect Density ◽  
Very High Frequency ◽  
Solar Cell Performance ◽  
Kinetics Of ◽  
Very High

ABSTRACTA systematic study has been made of the annealing kinetics of amorphous silicon (a-Si) alloy solar cells. The cells were deposited at various rates using H2 dilution with radio frequency (RF) and modified very high frequency (MVHF) glow discharge. In order to minimize the effect of annealing during light soaking, the solar cells were degraded under 30 suns at room temperature to quickly reach their saturated states. The samples were then annealed at an elevated temperature. The J-V characteristics were recorded as a function of annealing time. The correlation of solar cell performance and defect density in the intrinsic layer was obtained by computer simulation. Finally, the annealing activation energy distribution (Ea) was deduced by fitting the experimental data to a theoretical model. The results show that the RF low rate solar cell with high H2 dilution has the lowest Ea and the narrowest distribution, while the RF cell with no H2 dilution has the highest Ea and the broadest distribution. The MVHF cell made at 8Å/s withhigh H2 dilution shows a lower Ea and a narrower distribution than the RF cell made at 3 Å/s, despite the higher rate. We conclude that different annealing kinetics plays an important role in determining the stabilized performance of a-Si alloy solar cells.

scholarly journals Construction of NiMoS3/BC heterostructure photoanodes and optimization of light scattering to improve the photovoltaic performance of dye sensitized solar cells (DSSCs)

2021 ◽  
Author(s):  
T Sumathi ◽  
Sonia A Fredricka ◽  
G Deepa
Keyword(s):  
Solar Cells ◽  
Large Scale ◽  
Photovoltaic Performance ◽  
Dye Sensitized Solar Cells ◽  
Photocurrent Density ◽  
Electron Hole ◽  
Dye Sensitized ◽  
Electron Hole Pair ◽  
Conversion Efficiencies ◽  
Sensitized Solar Cells

Abstract In the last two decades, dye sensitized solar cells (DSSCs) have gotten a lot of attention from researchers and have progressed quickly. To promote commercialization and large-scale application of DSSCs, their efficiency should be increased. This paper details significant advancements in advanced NiMoS3/BC nanocomposites for improving photoanodes and DSSC conversion efficiencies. The fabricated electrode samples were characterized by XRD, SEM, TEM, Raman, UV, PL and BET to explore the structural, morphological and optical properties. A significant reduction band gap with enhanced light absorption and rapid prevention of electron hole pair was explored by UV-DRS and PL studies. The photocurrent density-voltage (J-V) and IPCE characteristics were analyzed for assembled solar cell. The NiMoS3/BC (NMSC5) nanocomposite DSSC showed a PCE of 8.85%, far higher than that of the NiMoS3 (2.45%) and a PCE value equivalent to Pt CE (4.79 %). The enhanced PCE of the proposed electrodes are also discussed in scientifically.

Energy for Electron-Hole Pair Generation in Silicon byαParticles

1963 ◽  
Vol 131 (1) ◽  
pp. 134-136 ◽  
Author(s):  
G. Fabri ◽  
E. Gatti ◽  
V. Svelto
Keyword(s):  
Hole Pair ◽  
Electron Hole ◽  
Electron Hole Pair ◽  
Pair Generation

scholarly journals A New Concept of Multi Electron-Hole Pair Generation using Dark-Bright Soliton Conversion Control

2011 ◽  
Vol 8 ◽  
pp. 483-486
Author(s):  
S. Punthawanunt ◽  
C. Teeka ◽  
R. Jomtarak ◽  
S. Mitatha ◽  
J. Ali ◽  
...  
Keyword(s):  
Hole Pair ◽  
Bright Soliton ◽  
Electron Hole ◽  
Electron Hole Pair ◽  
Pair Generation

Electron-hole—pair generation and hysteresis in semiconductors

1983 ◽  
Vol 27 (8) ◽  
pp. 4779-4787 ◽  
Author(s):  
A. Elçi ◽  
M. O. Scully ◽  
J. M. O'Hare
Keyword(s):  
Hole Pair ◽  
Electron Hole ◽  
Electron Hole Pair ◽  
Pair Generation
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