Electron Transport in a-Si1-xGex:H Solar Cells

1992 ◽  
Vol 258 ◽  
Author(s):  
Qi Wang ◽  
Homer Antoniadis ◽  
E. A. Schiff ◽  
S. Guha
Keyword(s):  
Solar Cells ◽  
Electron Transport ◽  
Fill Factor ◽  
Open Circuit ◽  
Drift Mobility ◽  
Electron Drift ◽  
Transport Parameters ◽  
Cell Parameters ◽  
Relationship Of ◽  
Electron Drift Mobility

ABSTRACTWe report a study of the correlation between solar cell parameters and electron transport parameters in a series of a-Si1-xGex:H alloys with bandgaps spanning the range 1.42 – 1.72 eV. Fill factors and open circuit voltages were measured in p-i-n solar cells with 0.32 μm thick i-layers. The electron drift mobility and deep-trapping mobility-lifetime product were measured using transient photocurrent techniques on p-i-n cells with thicker i-layers. The open circuit voltage tracked the bandgap accurately. Both the electron drift mobility and the deep-trapping mobility lifetime product correlated reasonably well with the fill factor measured with illumination absorbed near the p-i interface. We present a discussion of the relationship of the fill factor to these transport parameters.

scholarly journals Effect of morphology on electron drift mobility in porousTiO2

2004 ◽  
Vol 6 (3) ◽  
pp. 141-147 ◽  
Author(s):  
B. O. Aduda ◽  
P. Ravirajan ◽  
K. L. Choy ◽  
J. Nelson
Keyword(s):  
Titanium Dioxide ◽  
Solar Cells ◽  
Electron Transport ◽  
Reactive Sputtering ◽  
Porous Titanium ◽  
Drift Mobility ◽  
Electron Drift ◽  
Film Morphology ◽  
Deposited Films ◽  
Electron Drift Mobility

Porous titanium dioxide is an attractive material for solar cell application on account of its stability, electron transport properties, and the possibilities for controlling surface morphology as well as for its ease of fabrication and low cost. NanostructuredTiO2has been intensively studied for applications to dye sensitised solar cells. The performance of the titanium dioxide based solar cells is influenced, among other factors, by the electron mobility of the porous titanium dioxide. Different fabrication processes for porous titanium films result in different film morphology, which in turn affects the electron transport. We have employed three different techniques namely, electrostatic spray assisted vapour deposition (ESAVD), D.C. reactive sputtering, and doctor blading of sol-gel dispersions to deposit thinTiO2films onto indium tin oxide (ITO) coated glass substrates. All these films exhibited only the anatase phase as confirmed by X-ray diffraction analysis. Using the time-of-flight technique, the electron drift mobility in the porousTiO2films was measured. The results show that in the low field region (<55,000 Vcm−1) the mobility, in all the films, were in the range of10−7to10−6cm2Vs−1. The drift mobility in the films prepared by reactive sputtering was consistently higher than in the films prepared by the two other techniques. Sputter deposited films had lower porosity (∼10% and 36% for normal-, and oblique (60∘)-angle deposited films) compared to∼50% for films deposited by the two other techniques. The relationship between the drift mobility and film morphology is discussed with the aid of scanning electron microscopy studies.

Study of Photoelectrochemical Solar Cell Using WSe2 Crystal

2013 ◽  
Vol 665 ◽  
pp. 330-335 ◽  
Author(s):  
Ripal Parmar ◽  
Dipak Sahay ◽  
R.J. Pathak ◽  
R.K. Shah
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Fill Factor ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Electrical Energy ◽  
Open Circuit ◽  
Cell Parameters ◽  
Photoelectrochemical Solar Cell ◽  
Photoelectrochemical Solar Cells

The solar cells have been used as most promising device to convert light energy into electrical energy. In this paper authors have attempted to fabricate Photoelectrochemical solar cell with semiconductor electrode using TMDCs. The Photoelectrochemical solar cells are the solar cells which convert the solar energy into electrical energy. The photoelectrochemical cells are clean and inexhaustible sources of energy. The photoelectrochemical solar cells are fabricated using WSe2crystal and electrolyte solution of 0.025M I2, 0.5M NaI, 0.5M Na2SO4. Here the WSe2crystals were grown by direct vapour transport technique. In our investigations the solar cell parameters like short circuit current (Isc) and Open circuit voltage (Voc) were measured and from that Fill factor (F.F.) and photoconversion efficiency (η) are investigated. The results obtained shows that the value of efficiency and fill factor of solar cell varies with the illumination intensities.

scholarly journals Electron drift-mobility measurements in polycrystalline CuIn1−xGaxSe2 solar cells

2012 ◽  
Vol 100 (10) ◽  
pp. 103901 ◽  
Author(s):  
S. A. Dinca ◽  
E. A. Schiff ◽  
W. N. Shafarman ◽  
B. Egaas ◽  
R. Noufi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Drift Mobility ◽  
Electron Drift ◽  
Electron Drift Mobility

scholarly journals Room-Temperature-Processed Amorphous Sn-In-O Electron Transport Layer for Perovskite Solar Cells

Materials ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 32 ◽  
Author(s):  
Seungtae Baek ◽  
Jeong Woo Han ◽  
Devthade Vidyasagar ◽  
Hanbyeol Cho ◽  
Hwi-Heon HA ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Electron Transport ◽  
Room Temperature ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Open Circuit ◽  
Transport Layer ◽  
Electron Transport Layer

We report amorphous tin-indium-oxide (TIO, Sn fraction: >50 atomic percentage (at%)) thin films as a new electron transport layer (ETL) of perovskite solar cells (PSCs). TIO thin films with Sn fraction of 52, 77, 83, 92, and 100 at% were grown on crystalline indium-tin-oxide (ITO, Sn fraction: ~10 at%) thin films, a common transparent conducting oxide, by co-sputtering In2O3 and SnO2 at room temperature. The energy band structures of the amorphous TIO thin films were determined from the optical absorbance and the ultraviolet photoelectron spectra. All the examined compositions are characterized by a conduction band edge lying between that of ITO and that of perovskite (here, methylammonium lead triiodide), indicating that TIO is a potentially viable ETL of PSCs. The photovoltaic characteristics of the TIO-based PSCs were evaluated. Owing mainly to the highest fill factor and open circuit voltage, the optimal power conversion efficiency was obtained for the 77 at%-Sn TIO ETL with TiCl4 treatment. The fill factor and the open circuit voltage changes with varying the Sn fraction, despite similar conduction band edges. We attribute these differences to the considerable changes in the electrical resistivity of the TIO ETL. This would have a significant effect on the shunt and/or the series resistances. The TIO ETL can be continuously grown on an ITO TCO in a chamber, as ITO and TIO are composed of identical elements, which would help to reduce production time and costs.

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

Kinetics of Light-Induced Effects in Mixed-Phase Hydrogenated Silicon Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Guozhen Yuea ◽  
Baojie Yan ◽  
Jeffrey Yang ◽  
Kenneth Lord ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
Equivalent Circuit Model ◽  
Open Circuit ◽  
Mixed Phase ◽  
Silicon Solar Cells ◽  
Initial Increase ◽  
Soaking Time ◽  
Hydrogenated Silicon ◽  
Kinetics Of

AbstractWe have observed a significant light-induced increase in the open-circuit voltage (Voc) of mixed-phase hydrogenated silicon solar cells. In this study, we investigate the kinetics of the light-induced effects. The results show that the cells with different initial Voc have different kinetic behavior. For the cells with a low initial Voc (less than 0.8 V), the increase in Voc is slow and does not saturate for light-soaking time of up to 16 hours. For the cells with medium initial Voc (0.8 ∼ 0.95 V), the Voc increases rapidly and then saturates. Cells with high initial Voc (0.95 ∼ 0.98 V) show an initial increase in Voc, followed bya Voc decrease. All light-soaked cells exhibit a degradation in fill factor. The temperature dependence of the kinetics shows that light soaking at high temperatures causes Voc increase to saturate faster than at low temperatures. The observed results can be explained by our recently proposed two-diode equivalent-circuit model for mixed-phase solar cells.

High Field Electron Drift in a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
Qing Gu ◽  
Eric A. Schiff ◽  
Jean Baptiste Chevrier ◽  
Bernard Equer
Keyword(s):  
Electric Fields ◽  
High Field ◽  
Drift Mobility ◽  
Time Range ◽  
Electron Drift ◽  
Parameter Change ◽  
Transient Photocurrent ◽  
Field Mobility ◽  
High Electric Fields ◽  
Electron Drift Mobility

We have measured the electron drift mobility in a-Si:H at high electric fields (E ≤ 3.6 x 105 V%cm). The a-Si:Hpin structure was prepared at Palaiseau, and incorporated a thickp+ layer to retard high field breakdown. The drift mobility was obtained from transient photocurrent measurements from 1 ns - 1 ms following a laser pulse. Mobility increases as large as a factor of 30 were observed; at 77 K the high field mobility de¬pended exponentially upon field (exp(E/Eu), where E u= 1.1 x 105 V%cm). The same field dependence was observed in the time range 10 ns – 1 μs, indicating that the dispersion parameter change with field was negligible. This latter result appears to exclude hopping in the exponential conduction bandtail as the fundamental transport mechanism in a-Si:H above 77 K; alternate models are briefly discussed.

scholarly journals SCAPS Simulation on P3HT:Graphene Nanocomposites Based Bulk-Heterojunction Organic Solar Cells

2019 ◽  
Vol 9 (1) ◽  
pp. 28
Author(s):  
Nur Shakina Mohd Shariff ◽  
Puteri Sarah Mohamad Saad ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Fill Factor ◽  
Bulk Heterojunction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Simulation Software ◽  
Capacitance Voltage

There has been an increasing interest towards organic solar cells after the discovery of conjugated polymer and bulk-heterojunction concept. Eventhough organic solar cells are less expensive than inorganic solar cells but the power conversion energy is still considered low. The main objective of this research is to investigate the effect of the P3HT’s thickness and concentration towards the efficiency of the P3HT:Graphene solar cells. A simulation software that is specialize for photovoltaic called SCAPS is used in this research to simulate the effect on the solar cells. The solar cell’s structure will be drawn inside the simulation and the parameters for each layers is inserted. The result such as the open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF), efficiency (η), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristic will be calculated by the software and all the results will be put into one graph.

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