AB Initio Calculations for Defects in Silicon-Based Amorphous Semiconductors
Keyword(s):
ABSTRACTWe have calclulated the ESR hyperfine parameters of threefold-coordinated Si atoms and twofold-coordinated P and N atoms in Si-based amorphous semiconductors using the density functional theory with a local-spin-density approximation. These calculated results have been compared with the observed ESR results.
2002 ◽
Vol 16
(11n12)
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pp. 1563-1569
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2005 ◽
Vol 237-240
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pp. 1129-1134
2009 ◽
Vol 23
(20n21)
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pp. 4087-4095
2016 ◽
Vol 30
(21)
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pp. 1650147
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