Reversible Luminescence Quenching of Porous Si by Solvents

1991 ◽  
Vol 256 ◽  
Author(s):  
Jeffrey M. Lauerhaas ◽  
Grace M. Credo ◽  
Julie L. Heinrich ◽  
Michael J. Sailor
Keyword(s):  
Dipole Moment ◽  
Charge Transfer ◽  
Diethyl Ether ◽  
Electron Donor ◽  
Surface Reaction ◽  
Methylene Chloride ◽  
Luminescence Quenching ◽  
Porous Si ◽  
Highly Sensitive ◽  
Surface Adsorbates

ABSTRACTInteraction of the solvents tetrahydrofuran, diethyl ether, methylene chloride, toluene, o-xylene, benzene, and methanol with luminescent porous n- Si (PS) results in reversible quenching of the luminescence associated with this material. The degree of quenching ranges from 99% – 50%, and scales with solvent dipole moment. Reaction with gaseous Cl2, Br2, or I2 results in irreversible quenching, associated with a surface reaction that removes Si-H bonds. Total luminescence quenching is observed on treatment of a PS wafer with a solution of the electron donor ferrocene in toluene, suggesting that charge transfer quenching may also be operative in this material. Luminescence is partially recovered by rinsing the PS in pure toluene. The data show that photoluminescence of PS is highly sensitive to surface adsorbates, suggesting that carrier trapping is easily induced in this material.

Luminescence Quenching by Photoinduced Charge Transfer between Metal Complexes in Peptide Nucleic Acids

2014 ◽  
Vol 118 (30) ◽  
pp. 9037-9045 ◽  
Author(s):  
Xing Yin ◽  
Jing Kong ◽  
Arnie De Leon ◽  
Yongle Li ◽  
Zhijie Ma ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Nucleic Acids ◽  
Metal Complexes ◽  
Peptide Nucleic Acids ◽  
Luminescence Quenching ◽  
Photoinduced Charge Transfer ◽  
Photoinduced Charge

Charge-Transfer Dipoles at the Si-SiO2 Interface and the Metal-Semiconductor Worfunction Difference In Mos Devices.

1987 ◽  
Vol 105 ◽  
Author(s):  
Hisham Z. Massoud
Keyword(s):  
Dipole Moment ◽  
Charge Transfer ◽  
Dipole Moments ◽  
Silicon Substrates ◽  
Interface Dipole ◽  
Mos Devices ◽  
Flatband Voltage ◽  
The Difference ◽  
Definition Of ◽  
Mos Structures

AbstractThe magnitude of the dipole moment at the Si-SiO2 interface resulting from partial charge transfer that takes place upon the formation of interface bonds has been calculated. The charge transfer occurs because of the difference in electronegativity between silicon atoms and SiO2 molecules which are present across the interface. Results obtained for (100) and (111) silicon substrates indicate that the magnitude of the interface dipole moment is dependent on substrate orientation and the interface chemistry. Dipole moments at the Si-SiO2 and gate-SiO2 interfaces should be included in the definition of the flatband voltage VFB of MOS structures. CV-based measurements of the metal-semiconductor workfunction difference φms on (100) and (111) silicon oxidized in dry oxygen and metallized with Al agree with the predictions of this model. Other types of interface dipoles and their processing dependence are briefly discussed.

Light harvesting vesicular donor–acceptor scaffold limits the rate of charge recombination in the presence of an electron donor

2014 ◽  
Vol 7 (5) ◽  
pp. 1661-1669 ◽  
Author(s):  
Rijo T. Cheriya ◽  
Ajith R. Mallia ◽  
Mahesh Hariharan
Keyword(s):  
Charge Transfer ◽  
Survival Time ◽  
Electron Donor ◽  
Self Assembly ◽  
Light Harvesting ◽  
Charge Recombination ◽  
Donor Acceptor

This work highlights the utility of π–π stacked self-assembly for enhanced survival time of charge transfer intermediates upon photoexcitation of donor–acceptor systems.

Highly sensitive PtSi/porous Si Schottky detectors

2002 ◽  
Vol 2 (5) ◽  
pp. 476-481 ◽  
Author(s):  
F. Raissi ◽  
M.M. Far
Keyword(s):  
Porous Si ◽  
Highly Sensitive
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