In-Situ Light-Scattering Measurements During the CVD of Polycrystalline Silicon Carbide

1991 ◽  
Vol 250 ◽  
Author(s):  
Brian W. Sheldon ◽  
Philip A. Reichle ◽  
Theodore M. Besmann
Keyword(s):  
Silicon Carbide ◽  
Light Scattering ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
Scattering Spectrum ◽  
Angular Scattering ◽  
Polycrystalline Silicon Carbide ◽  
Scattering Spectra

AbstractLight-scattering was used to monitor the chemical vapor deposition of silicon carbide from methyltrichlorosilane. The nucleation and growth of the SiC features caused changes in the surface topography that altered the angular scattering spectrum that was generated with a He-Ne laser. These scattering spectra were then analyzed to obtain information about the nucleation and growth processes that are occurring.

scholarly journals Epitaxical nucleation of polycrystalline silicon carbide during chemical vapor deposition

1993 ◽  
Vol 8 (9) ◽  
pp. 2417-2418 ◽  
Author(s):  
Brian W. Sheldon ◽  
Theodore M. Besmann ◽  
Karren L. More ◽  
Thomas S. Moss
Keyword(s):  
Electron Microscopy ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Surface Layers ◽  
Reactor Configuration ◽  
Polycrystalline Silicon Carbide

Polycrystalline silicon carbide was deposited from methyltrichlorosilane in cold-walled and hot-walled reactors, on (100) SiC surface layers that were formed on (100) Si wafers. The initial stages of the process were studied by electron microscopy after relatively short deposition times. Submicron surface features nucleated with a specific crystallographic orientation with respect to the substrate, where {111} planes in the β–SiC substrate coincided with {0001} planes in the α–SiC features. These α–SiC features occurred only at twins on {111} planes of the β–SiC substrate. This demonstrates that nucleation under these conditions is controlled by defects in the substrate. Surface contamination and the reactor configuration also had substantial effects on nucleation.

The Nucleation and Growth of Polycrystalline Silicon Carbide

1990 ◽  
Vol 202 ◽  
Author(s):  
Brian W. Sheldon ◽  
Theodore M. Besmann
Keyword(s):  
Silicon Carbide ◽  
Image Analysis ◽  
Light Scattering ◽  
Growth Rates ◽  
Growth Models ◽  
Scattered Light ◽  
Angular Spectrum ◽  
Nucleation And Growth ◽  
Reduced Pressure ◽  
Scattering Spectra

ABSTRACTSilicon carbide was deposited from methyltrichlorosilane onto polished polycrystalline SiC substrates at reduced pressure, and the resultant surface morphology was characterized by analyzing the angular spectrum of scattered light which was generated with a He-Ne laser. Light-scattering analyses incorporating specific nucleation and growth models were developed. With these methods, it was possible to analyze the angular scattering spectra and directly measure the nucleation and growth rates. These results were verified by using image analysis to quantify the number and size distribution of surface features that were observed with scanning electron microscopy. The nucleation and growth rates that were obtained by fitting the models to the image-analysis results were in good agreement with the rates obtained from the light-scattering.

Epitaxical nucleation of polycrystalline silicon carbide during chemical vapor deposition

1993 ◽  
Vol 8 (5) ◽  
pp. 1086-1092 ◽  
Author(s):  
Brian W. Sheldon ◽  
Theodore M. Besmann ◽  
Karren L. More ◽  
Thomas S. Moss
Keyword(s):  
Electron Microscopy ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Surface Layers ◽  
Reactor Configuration ◽  
Polycrystalline Silicon Carbide

Polycrystalline silicon carbide was deposited from methyltrichlorosilane in cold-walled and hot-walled reactors, on (100) SiC surface layers that were formed on (100) Si wafers. The initial stages of the process were studied by electron microscopy after relatively short deposition times. Submicron surface features nucleated with a specific crystallographic orientation with respect to the substrate, where h111j planes in th—SiC substrate coincided with h0001j planes in the a–SiC features. These a–SiC features occurred only at twins on h111j planes of the b–SiC substrate. This demonstrates that nucleation under these conditions is controlled by defects in the substrate. Surface contamination and the reactor configuration also had substantial effects on nucleation.

Growth of Polycrystalline Silicon Carbide on Thin Polysilicon Sacrificial Layers for Surface Micromachining Applications

2002 ◽  
Vol 741 ◽  
Author(s):  
R.F. Wiser ◽  
J. Chung ◽  
M. Mehregany ◽  
C.A. Zorman
Keyword(s):  
Silicon Carbide ◽  
Atmospheric Pressure ◽  
Polycrystalline Silicon ◽  
Sacrificial Layer ◽  
Chemical Vapor ◽  
Polycrystalline Silicon Carbide ◽  
Pressure Chemical ◽  
Sacrificial Layers ◽  
High Degree ◽  
Sic Films

ABSTRACTPolycrystalline silicon carbide (poly-SiC) films were deposited by atmospheric pressure chemical vapor deposition (APCVD) at epitaxial growth temperatures on planar, 100 nm-thick polysilicon sacrificial layers using two recipes that included or excluded a pre-growth carbonization step. Poly-SiC films grown using the carbonization-based recipe exhibited a relatively high degree of (111) 3C-SiC texture and had uniform, well-defined, void-free poly-SiC/polysilicon interfaces. In contrast, poly-SiC films grown without carbonization were randomly oriented, had numerous poly-SiC inclusions that sometimes completely penetrated the polysilicon underlayer, and had a higher surface roughness than the films grown with carbonization. Analysis of micromechanical clamped-clamped (C-C) beam resonators fabricated from films grown using the two differing recipes shows that the carbonization step is needed to protect the thin polysilicon sacrificial layer from voids and inclusions and thus maintain the proper spacing between the drive electrodes and the resonant beams.

scholarly journals Erratum

1993 ◽  
Vol 8 (9) ◽  
pp. 2416-2416
Author(s):  
Brian W. Sheldon ◽  
Theodore M. Besmann ◽  
Karren L. More ◽  
Thomas S. Moss
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Polycrystalline Silicon Carbide

“Epitaxical nucleation of polycrystalline silicon carbide during chemical vapor deposition” [J. Mater. Res. 8, 1086 (1993)]

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