Surface Chemistry of Fluorine-Containing Molecules Related to CVD Process on Silicon Nitride: SiF4, XeF2, and HF

1991 ◽  
Vol 250 ◽  
Author(s):  
Duane A. Outka
Keyword(s):  
Silicon Nitride ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Polycrystalline Silicon ◽  
Auger Electron ◽  
Chemical Vapor ◽  
Temperature Programmed Desorption ◽  
Auger Peak ◽  
Rate Determining Step ◽  
Temperature Programmed

AbstractThe reactivity of several fluorine-containing molecules on a polycrystalline silicon nitride (Si3N4) surface is studied under ultrahigh vacuum (UHV) conditions using temperature programmed desorption (TPD) and Auger electron spectroscopy (AES). The chemistry of fluorine on Si3N4 is of interest in understanding the high temperature chemical vapor deposition (CVD) of Si3N4, which uses SiF4 as a starting material. XeF2 is reacted with a Si3N4 surface to prepare and characterize various surface SiFx (1 ≤ × ≤ 3) species. These are identified by the chemical shift induced by the fluorine atoms in the Si (LMM) Auger peak and by changes in the TPD. Of these species, SiF2 is stable to the highest temperature. SiF2 is also formed by the reaction of SiF4 with a Si3N4. Because SiF2 is so stable, its decomposition is proposed as a rate-determining step in the CVD deposition of Si3N4 from SiF4. Gaseous HF, which is a product of the CVD process, does not dissociate on Si3N4 and is therefore unlikely to cause the etch-like marks on the Si3N4 coating that are observed under certain conditions.

Quasi-Stoichiometric Silicon Nitride Thin Films Deposited by Remote Plasma-Enhanced Chemical-Vapor Deposition

1992 ◽  
Vol 284 ◽  
Author(s):  
G. Lucovsky ◽  
Y. Ma ◽  
S. S. He ◽  
T. Yasuda ◽  
D. J. Stephens ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
Electrical Performance ◽  
Remote Plasma ◽  
Silicon Nitride Films ◽  
On Line

ABSTRACTConditions for depositing quasi-stoichiometric silicon nitride films by low-temperature, remote plasma-enhanced chemical-vapor deposition, RPECVD, have been identified using on-line Auger electron spectroscopy, AES, and off-line optical and infrared, IR, spectroscopies. Quasi-stoichiometric films, by the definition propose in this paper, do not display spectroscopic evidence for Si-Si bonds, but contain bonded-H in Si-H and Si-NH arrangements. Incorporation of RPECVD nitrides into transistor devices has demonstrated that electrical performance is optimized when the films are quasi-stoichiometric with relatively low Si-NH concentrations.

The Interaction of HCl With polycrystalline β-SiC: Evidence for a Site-Blocking Mechanism for HCl Inhibition of SiC CVD

1995 ◽  
Vol 410 ◽  
Author(s):  
Michelle T. Schulberg ◽  
Mark D. Allendorf ◽  
Duane A. Outka
Keyword(s):  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Chemical Vapor ◽  
Temperature Programmed Desorption ◽  
Etching Mechanism ◽  
Temperature Programmed ◽  
A Site ◽  
Site Blocking ◽  
Blocking Mechanism ◽  
Initial Sticking

ABSTRACTChlorine-containing precursors are attractive for chemical vapor deposition (CVD) of SiC because they are less hazardous and more economical than silane precursors. The reactivity of HCl, a by-product of these reactions, on SiC is of particular interest because it has been reported that HCl inhibits SiC CVD, but the mechanism for this inhibition has not been identified. In this work the adsorption of HCl on polycrystalline β-SiC was examined with Auger Electron Spectroscopy (AES) and Temperature Programmed Desorption (TPD). HCl adsorbs readily on SiC, with an initial sticking probability of 0.1 at 300 K, and forms a strong bond, with an activation energy for desorption of 64 kcal/mol. The only product detected by TPD is HCl, which desorbs in a peak centered at 1010 K. There are no Si- or C-containing desorption products, demonstrating that HCl does not etch SiC under TPD conditions. These results are consistent with a site-blocking mechanism for HCl inhibition of SiC CVD, but not with an etching mechanism.

Stranski–Krastanov Growth of Tungsten during Chemical Vapor Deposition Revealed by Micro-Auger Electron Spectroscopy

2004 ◽  
Vol 43 (10) ◽  
pp. 6974-6977 ◽  
Author(s):  
Suguru Noda ◽  
Takeshi Tsumura ◽  
Jota Fukuhara ◽  
Takashi Yoda ◽  
Hiroshi Komiyama ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Auger Electron Spectroscopy ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor

OMCVD of thin films from metal diketonates and triphenylbismuth

1990 ◽  
Vol 5 (6) ◽  
pp. 1169-1175 ◽  
Author(s):  
A. D. Berry ◽  
R. T. Holm ◽  
M. Fatemi ◽  
D. K. Gaskill
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Strontium Barium ◽  
X Ray ◽  
Scanning Electron

Films containing the metals copper, yttrium, calcium, strontium, barium, and bismuth were grown by organometallic chemical vapor deposition (OMCVD). Depositions were carried out at atmospheric pressure in an oxygen-rich environment using metal beta-diketonates and triphenylbismuth. The films were characterized by Auger electron spectroscopy, Nomarski and scanning electron microscopy, and x-ray diffraction. The results show that films containing yttrium consisted of Y2O3 with a small amount of carbidic carbon, those with copper and bismuth were mixtures of oxides with no detectable carbon, and those with calcium, strontium, and barium contained carbonates. Use of a partially fluorinated barium beta-diketonate gave films of BaF2 with small amounts of BaCO3.

Heteroepitaxial System of h-BN/Monolayer Graphene on Ni(111)

2003 ◽  
Vol 10 (04) ◽  
pp. 697-703 ◽  
Author(s):  
T. Tanaka ◽  
A. Itoh ◽  
K. Yamashita ◽  
E. Rokuta ◽  
C. Oshima
Keyword(s):  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Elevated Temperatures ◽  
Chemical Vapor ◽  
Low Energy ◽  
Monolayer Graphene ◽  
Low Energy Electron Diffraction ◽  
Ni Substrate ◽  
Low Energy Electron

A heteroepitaxial system of h-BN/monolayer graphene on Ni(111) has been investigated by means of vibrational spectroscopy, accompanied by low energy electron diffraction (LEED) and Auger electron spectroscopy (AES). The system was prepared in an epitaxial manner on a Ni(111) surface by chemical vapor deposition (CVD). We found that phonon peaks in observed spectra showed typical features of Fuchs–Kliewer (FK) phonons. The vibrational spectra of h-BN films ranging in thickness from 0 to 8.7 monolayers have been compared with theoretical spectra based on a dielectric theory. Detailed analysis has revealed new types of phonons, of which the vibrational amplitudes are localized at edges of h-BN nanocrystals. In addition, we have observed subsidence phenomena of the graphene and h-BN layers into Ni substrate at elevated temperatures.

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