Thin Film Properties of LPCVD TiN Barrier for Silicon Device Technology

1991 ◽  
Vol 250 ◽  
Author(s):  
Rama I. Hegde ◽  
Robert W. Fiordalice ◽  
Edward O. Travis ◽  
Philip J. Tobin
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Deposition Temperature ◽  
Lattice Parameter ◽  
Microstructural Properties ◽  
Film Properties ◽  
Deposition Rates ◽  
Tin Film ◽  
Silicon Device ◽  
Device Technology

AbstractThin film properties of LPCVD TiN barriers deposited on Si(100), using TiCl4 and NH3 as reactants, were investigated as a function of deposition temperature between 400 °C and 700 °C. The TiN film chemistry and film composition were studied by AES and RBS techniques, while the microstructural properties (grain size, lattice parameter and texture) were evaluated by XRD. The TiN deposition rates and film resistivities were also determined. Finally the film properties of the TiN barriers as determined by surface analysis were related to the process parameters.

The Effect of Deposition Temperature on the Microstructure of Lpcvd Polysilicon Films

1991 ◽  
Vol 239 ◽  
Author(s):  
J. Hangas ◽  
D. R. Liu ◽  
D. G. Oei ◽  
S. L. McCarthy ◽  
C. Peters
Keyword(s):  
Growth Rate ◽  
Grain Size ◽  
Deposition Temperature ◽  
Hexagonal Phase ◽  
Stacking Faults ◽  
Lattice Parameter ◽  
Dislocation Motion ◽  
Narrow Region ◽  
Thin Oxide Film ◽  
Polysilicon Films

ABSTRACTThe microstructure, of unannealed and annealed polysilicon films was studied using TEM and XRD. The LPCVD films were grown at 600°C and 620°C with 320 mTorr of silane, and at 580°C with 220 mTorr of silane. The substrates were [001] Si with a thin oxide film. The stress state of the films changed from compressive at 580°C and 620°C, to tensile in a narrow region around 600°C. The same materials were annealed at 1100°C. The unannealed films vary from partially amorphous at 580°C, where the slowest growth rate was observed, to randomly oriented and equiaxed at 600°C, to columnar and highly oriented at 620°C. The grains in the 620°C material have a high stacking fault and polytype density, and it was proposed that these occurred on growth, and not from dislocation motion. The grain size increased from 40–250run to 100–300 nm in the 600°C samples when annealed at 1100°C, and the density of twins and stacking faults was reduced. The hexagonal phase was observed only in unannealed materials in SAED and as broad “wings” at the base of the llld.c (diamond cubic) peak in XRD. Within the limits of SAED, no change in lattice parameter of the hexagonal phase was observed.

Microstructure of CuInS2 films prepared by sulfuration of Cu–In–O films

1993 ◽  
Vol 8 (3) ◽  
pp. 545-550 ◽  
Author(s):  
Takahiro Wada ◽  
Takayuki Negami ◽  
Mikihiko Nishitani
Keyword(s):  
Grain Size ◽  
Deposition Temperature ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Chalcopyrite Structure ◽  
Microstructural Properties ◽  
X Ray ◽  
Gas Atmosphere ◽  
Scanning Electron

Polycrystalline CuInS2 thin films are prepared by sulfuration of Cu–In–O films. The Cu–In–O films are deposited from a sintered Cu2In2O5 target by using a pulsed laser deposition (PLD) method. Then, the Cu–In–O films are converted into CuInS2 films by means of a subsequent annealing in an H2S gas atmosphere. The characteristics of the films are determined by using an x-ray diffractometer (XRD), an energy dispersive x-ray spectrometer (EDX), and a scanning electron microscope (SEM). The effects of the deposition and sulfuration temperatures of the Cu–In–O films on the structural and microstructural properties of CuInS2 films are examined experimentally. Single-phase CuInS2 films with a chalcopyrite structure are obtained when Cu–In–O films are sulfurated at a temperature higher than 400 °C. Grain size of CuInS2 is larger when a lower deposition temperature and a higher sulfuration temperature of Cu–In–O films are employed.

Physical properties of spinel iron oxide thin films

1988 ◽  
Vol 3 (2) ◽  
pp. 344-350 ◽  
Author(s):  
C. Ortiz ◽  
G. Lim ◽  
M. M. Chen ◽  
G. Castillo
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Physical Properties ◽  
Room Temperature ◽  
Lattice Parameter ◽  
Infrared Transmission ◽  
Transmission Properties ◽  
Annealing Conditions ◽  
Deposition Conditions

This paper describes the complexity of the spinel iron oxides in thin-film configuration. First, the experimental deposition conditions are determined for the parameters of substrate temperature and oxygen flow such that only the “Fe3O4” phase is formed. Then a study is made of how the structural (grain size, lattice parameter, texture), magnetic (M), and optical (visible and infrared transmission) properties of the films depend on the deposition and postdeposition (air annealing) conditions. The experimental deposition region is defined where the films have the most similar physical properties to bulk Fe3O4 and subsequently, after annealing, to bulk gamma Fe2O3. Finally, a discussion is presented of a model that accounts for the anomalous, low values of the magnetic moment for the samples deposited at room temperature. The model proposes an overpopulation of the iron tetrahedral A sites.

A Process Study of Organic/Inorganic Film Materials Deposited by ICP-PECVD at Low Temperature

2017 ◽  
Vol 753 ◽  
pp. 148-155
Author(s):  
Jian Liu ◽  
Jie Liu ◽  
Xing Long Leng ◽  
Fu Rong Qu
Keyword(s):  
Thin Film ◽  
Flow Rate ◽  
Deposition Temperature ◽  
Infrared Spectrometry ◽  
Organic Layer ◽  
Film Material ◽  
Organic Film ◽  
Film Properties ◽  
Bias Power ◽  
Process Study

The film package of organic device plays an important part in organic electronics manufacturing. In order to get high efficiency encapsulation film material, we developed a set of inductively coupled plasma chemical vapor deposition system (ICP-PECVD). A process study on Organic/inorganic hybrid material deposition was carried out for permeation barrier application. In the study, the effects of plasma power, bias power and deposition temperature on film properties were investigated. Fourier transform infrared spectrometry (FTIR), ellipsometer and transmission electron microscopy (TEM) were used to characterize the film properties. The increase of ICP power is favor to SiOx growth with limits. Bias power increases deposition rate. Film density will increase with the rise of deposition temperature. It was found that the ratio of O2/HMDSO flow rate was the key factor to obtain organic layer or inorganic layer. Since the ratio of O2/HMDSO flow rate increase to 10:1, HMDSO will be completely oxidized and Si-O-Si bonds are formed. As the result, the organic film can be obtained with the no oxygen deposition process. Hybrid film between organic film and inorganic film can be deposited under the condition of O2/HMDSO gas flow ratio less than 10:1. Water vapor transmission rates (WVRT) of organic film, inorganic film and organic/inorganic stacks are also tested. The experimental results show that the inorganic thin film has good performance in water or oxygen permeation; organic thin film is mainly for flexibility and inorganic film growth stress release. And interfacial characteristics between inorganic film and organic film have influence on water and oxygen barrier. As result, we obtained the single inorganic film with WVRT of 4.3×10-2g/m2day and the four cycles organic / inorganic alternating structure film with WVRT of 3.66×10-4g/m2 day.

Influence of Deposition Temperature on Microcrystalline Silicon Thin Film Prepared by Plasma Enhanced Chemical Vapor Deposition

2011 ◽  
Vol 181-182 ◽  
pp. 401-404
Author(s):  
Lan Li Chen ◽  
Sheng Zhao Wang ◽  
Ying Peng Yin ◽  
Ming Ji Shi
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Stainless Steel ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
Experimental Conditions

The influence of deposition temperature (Ts) on glass/stainless steel-based intrinsic amorphous/microcrystalline silicon thin film prepared at different temperature was investigated by PECVD technology. The crystallization ratio and grain size of the silicon thin film at different deposition temperature is studied. The results reveal that the crystallization ratio and grain size of silicon thin film changed along with Ts. The crystallization ratio and grain size of the silicon thin film become larger when Ts=400 °C. On this work, optimal μc-Si:H can be obtained at 400°C deposition temperature in the suitable experimental conditions.

Pengaruh Pendopingan Karbon Terhadap Struktur Kristal dan Morfologi TIO2

2019 ◽  
Vol 2 (2) ◽  
Author(s):  
Frastica Deswardani ◽  
Helga Dwi Fahyuan ◽  
Rimawanto Gultom ◽  
Eif Sparzinanda
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Grain Size ◽  
Tio2 Thin Film ◽  
Crystal Size ◽  
Diffraction Peak ◽  
Carbon Doping ◽  
Tio2 Anatase ◽  
Spray Method ◽  
Carbon Analysis

Telah dilakukan penelitian mengenai pengaruh konsentrasi doping karbon pada lapisan tipis TiO2 yang ditumbuhkan dengan metode spray terhadap struktur kristal dan morfologi TiO2. Hasil karakterisasi SEM menunjukkan bahwa penambahan doping karbon dapat meningkatkan ukuran butir. Lapisan TiO2 doping karbon 8% diperoleh ukuran butir terbesar adalah 1.35 μm, sedangkan ukuran tekecilnya adalah 0.45 μm. Sementara itu, untuk lapisan tipis TiO2 didoping karbon 15% memiliki ukuran butir terbesar yaitu 1.76 μm dan terkecil 0.9 μm. Hasil XRD menunjukkan seluruh puncak difraksi lapisan tipis TiO2 dengan doping karbon 8% dan 15% merupakan TiO2 anatase. Ukuran kristal lapisan TiO2 didoping karbon 8% diperoleh sebesar 638,08 Å dan untuk pendopingan 15% karbon ukuran kristal lapisan tipis TiO2 adalah 638,09 Å, hal ini menunjukkan ukuran kristal kedua sampel tidak mengalami perubahan yang signifikan.   TiO2 thin film with carbon doping has been successfully grown by spray method. The research on the effect of carbon doping on crystal structure and morfology of TiO2 has been prepared by varying carbon concentration (8% and 15% carbon). Analysis of SEM showed that the addition of carbon may increase the grain size. Thin film of TiO2 doped carbon 8% has the largest grain size 1.35 μm, while the smallest grain size is 0.45 μm. Meanwhile, for thin film TiO2 doped carbon 15% has the largest grain size 1.76 μm and smallest 0.9 μm. The XRD results showed the entire diffraction peak of thin film TiO2 doped carbon 8% and 15% were TiO2 anatase. The crystal size of thin film TiO2 doped carbon 8% was obtained at 638.08 Å and for thin film TiO2 doped carbon 15% the crystalline size of TiO2 thin film was 638.09 Å, this shows that the crystal size of both samples did not change significantly.    

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

Influence of the deposition temperature on the performance of microcrystalline silicon thin film transistors

2008 ◽  
Vol 52 (3) ◽  
pp. 432-435 ◽  
Author(s):  
Maher Oudwan ◽  
Alexey Abramov ◽  
Pere Roca i Cabarrocas ◽  
François Templier
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Deposition Temperature ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film
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