Low-Temperature PACVD Silicon Carbide Coatings

1991 ◽  
Vol 250 ◽  
Author(s):  
W. Halverson ◽  
G. D. Vakerlis ◽  
D. Garg ◽  
P. N. Dyer
Keyword(s):  
Silicon Carbide ◽  
Low Temperature ◽  
Large Volume ◽  
Chemical Vapor ◽  
Reaction Chamber ◽  
Metallic Substrates ◽  
3 Dimensional ◽  
Carbide Coatings ◽  
Reactor Operating ◽  
Wear Tests

AbstractPlasma-assisted chemical vapor deposition (PACVD) is used extensively to coat planar (2-dimensional) substrates. In principle, the technique can be used to deposit coatings on 3-dinensional objects. However, extending PACVD to coat 3-dimensional objects uniformly requires careful control of the plasma, substrate temperature, and reactant concentrations over a large volume. A novel low-temperature radio frequency PACVD reactor design was developed to deposit coatings uniformly and reproducibly on 3-dimensional metallic substrates. The design features a temperature-controlled reaction chamber fitted with one or more rf-driven electrodes to generate uniform, large-volume plasma. The reactor was used to develop a series of silicon carbide coatings, which were deposited at or below 500°C. The coatings contain SiC and varying amounts of free silicon and/or amorphous carbon (diamond-like carbon), depending on reagent gas composition and reactor operating parameters. The coatings significantly reduced wear on stainless steel samples in ball-on-disk and abrasive wear tests and provided oxidation protection to molybdenum and titanium alloy.

FORMATION OF SILICON CARBIDE COATINGS BY CHEMICAL VAPOR DEPOSITION (review). Part 1

2021 ◽  
pp. 100-111
Author(s):  
D.V. Sidorov ◽  
◽  
A.A. Schavnev ◽  
A.A. Melentev ◽  
◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Point Of View ◽  
Technological Parameters ◽  
Technical Literature ◽  
Pure Silicon ◽  
Carbide Coatings ◽  
Complex Process

The article provides an overview of the scientific and technical literature in the field of the formation of silicon carbide coatings by chemical vapor deposition (CVD). CVD is a complex process, approaches to which vary depending on the tasks being solved. Depending on the technological parameters, the initial reagents, the substrate for deposition, the type and design of the CVD reactors, it is possible to achieve both the deposition of pure silicon carbide and the co-deposition of silicon and/or carbon. In the first part of the article, attention is paid to the study of CVD from the point of view of the mechanisms of chemical reactions, the design of the deposition apparatus, the substrates for deposition.

Afm/Tem Investigation of Low Temperature Polycrystalline Silicon Grown by ECR-CVD

1995 ◽  
Vol 406 ◽  
Author(s):  
H. L. Hsiao ◽  
K. C. Wang ◽  
L. W. Cheng ◽  
A. B. Yang ◽  
T. R. Yew ◽  
...  
Keyword(s):  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Chemical Vapor ◽  
Plan View ◽  
3 Dimensional ◽  
High Resolution Tem ◽  
Si Films ◽  
Polycrystalline Silicon Films

AbstractThe polycrystalline silicon films were deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD) with hydrogen dilution at 250°C and without any thermal annealing. The surface morphology and the microstructure of the poly-Si films are investigated by atomic force microscopy (AFM), plan-view transmission electron microscopy (TEM), crosssectional TEM and high resolution TEM (HRTEM). The low temperature poly-Si films deposited by ECR-CVD show a special leaf-like grain shape (plan-view) and an upside-down cone shape (3-dimensional view). The grains in the poly-Si films have preferred orientation of <112> and the longer side of the leaf-like grain is direction and the shorter side is direction. Lattice bending and interruption are found in the films. The arrangement of the atoms on the grains are well ordered, while atoms in the interfacial regions are randomly distributed. A simple grain formation model based on growth rate differences between different planes and etching effect can explain the film growth mechanism and the formation of the special grain geometry.

Control of stoichiometry, microstructure, and mechanical properties in SiC coatings produced by fluidized bed chemical vapor deposition

2008 ◽  
Vol 23 (6) ◽  
pp. 1785-1796 ◽  
Author(s):  
E. López-Honorato ◽  
P.J. Meadows ◽  
J. Tan ◽  
P. Xiao
Keyword(s):  
Mechanical Properties ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Young’S Modulus ◽  
Fluidized Bed ◽  
Vapor Deposition ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Carbide Coatings ◽  
Fuel Particles

Stoichiometric silicon carbide coatings the same as those used in the formation of TRISO (TRistructural ISOtropic) fuel particles were produced by the decomposition of methyltrichlorosilane in hydrogen. Fluidized bed chemical vapor deposition at around 1500 °C, produced SiC with a Young’s modulus of 362 to 399 GPa. In this paper we demonstrate the deposition of stoichiometric silicon carbide coatings with refined microstructure (grain size between 0.4 and 0.8 μm) and enhanced mechanical properties (Young’s modulus of 448 GPa and hardness of 42 GPa) at 1300 °C by the addition of propene. The addition of ethyne, however, had little effect on the deposition of silicon carbide. The effect of deposition temperature and precursor concentration were correlated to changes in the type of molecules participating in the deposition mechanism.

Preparation of Silicon Carbide Coatings from Liquid Carbosilanes by Chemical Vapor Deposition

2007 ◽  
Vol 16 (6) ◽  
pp. 775-778 ◽  
Author(s):  
Bin Li ◽  
Changrui Zhang ◽  
Haifeng Hu ◽  
Yingbin Cao ◽  
Gongjin Qi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbide Coatings

scholarly journals Experimental and FEM based investigation of the influence of the deposition temperature on the mechanical properties of SiC coatings

2021 ◽  
Vol 10 (1) ◽  
pp. 139-151
Author(s):  
Thomas Schlech ◽  
Siegfried Horn ◽  
Charles Wijayawardhana ◽  
Arash Rashidi
Keyword(s):  
Mechanical Properties ◽  
Fracture Toughness ◽  
Silicon Carbide ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Material Model ◽  
Element Model ◽  
Substrate Material ◽  
Plastic Properties ◽  
Carbide Coatings

AbstractScanning electron microscopy shows that the microstructure, in particular the overall grain size, of chemical vapor deposited silicon carbide coatings depends on the deposition temperature. So far, the influence of the microstructure on the mechanical properties of such coatings is not well described in literature. To investigate the influence of the deposition temperature on the mechanical properties of the coating, nanoindentation is used in this work. Since the measurement results of nanoindentation can be affected by the substrate material, the contribution of the substrate material is taken into account utilizing a finite element model. The model is then employed to generate information about elastic and plastic properties of the coating by inverse simulation. To evaluate the fracture toughness of the coating, the generated material model is used in a cohesive-zone based formulation of the fracture process during indentation at higher loads. The results of this model allow determining the fracture toughness of silicon carbide coatings deposited at different temperatures.

Heteropolytype Growth of Beta Silicon Carbide on Alpha Silicon Carbide by Low Pressure Chemical Vapor Deposition at 1150 C

1992 ◽  
Vol 281 ◽  
Author(s):  
K. J. Irvine ◽  
M. G. Spencer ◽  
V. A. Dmitriev
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Critical Thickness ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Temperature Growth ◽  
Pressure Chemical

ABSTRACTWe report on the low temperature growth of heteropolytype junctions of 3C-SiC on 6H-SiC by low pressure chemical vapor deposition. In this work we have observed the epitaxial layers to be single crystal below a critical thickness limit which depends on growth temperature. Films thicker than this limit are polycrystalline. At 1150 C we have found the critical thickness to be approximately 2500 angstroms.

Low-Temperature Chemical Vapor Deposition Tungsten Carbide Coatings for Wear/Erosion Resistance

1992 ◽  
Vol 75 (4) ◽  
pp. 1008-1011 ◽  
Author(s):  
Diwakar Garg ◽  
Paul N. Dyer ◽  
Duane B. Dimos ◽  
Swaminathan Sunder ◽  
Hans E. Hintermann ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Tungsten Carbide ◽  
Vapor Deposition ◽  
Erosion Resistance ◽  
Chemical Vapor ◽  
Carbide Coatings
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