Epitaxial Growth of NiSi2 on (011)Si

1983 ◽  
Vol 25 ◽  
Author(s):  
L.J. Chen ◽  
W.T. Lin ◽  
M.B. Chang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Shear Stress ◽  
Epitaxial Growth ◽  
Expected Value ◽  
Edge Type ◽  
Average Spacing ◽  
Transmission Electron ◽  
Interfacial Dislocations ◽  
Critical Resolved Shear Stress

ABSTRACTEpitaxial growth of NiSi2 on (011)Si was investigated by the transmission electron microscopy. Both epitaxial and twin related NiSi2 were formed, with the former being predominant, in samples annealed at 850°C for 1/2 h. The silicides were faceted with {111} interfaces being more prominent than {100} interfaces. Interfacial dislocations were found to be of edge type with 1/6<112> Burgers vectors. The average spacing is about 700 Å which is very close to the theoretically expected value 670 Å.The absence of twins formed on (111) and (111) planes for (011) samples as well as the results obtained for (001) and (111) specimens suggest that there exists a critical resolved shear stress at the interface for the initiation of the formation of twin related NiSi2.

On temperature dependence of deformation mechanism and the brittle–ductile transition in semiconductors

1999 ◽  
Vol 14 (7) ◽  
pp. 2783-2793 ◽  
Author(s):  
P. Pirouz ◽  
A. V. Samant ◽  
M. H. Hong ◽  
A. Moulin ◽  
L. P. Kubin
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Shear Stress ◽  
Deformation Mechanism ◽  
Low Temperatures ◽  
Partial Dislocations ◽  
Brittle Ductile Transition ◽  
Transmission Electron ◽  
Literature Evidence ◽  
Critical Resolved Shear Stress

Recent deformation experiments on semiconductors have shown the occurrence of a break in the variation of the critical resolved shear stress of the crystal as a function of temperature. These and many other examples in the literature evidence a critical temperature at which a transition occurs in the deformation mechanism of the crystal. In this paper, the occurrence of a similar transition in two polytypes of SiC is reported and correlated to the microstructure of the deformed crystals investigated by transmission electron microscopy, which shows evidence for partial dislocations carrying the deformation at high stresses and low temperatures. Based on these results and data in the literature, the explanation is generalized to other semiconductors and a possible relationship to their brittle–ductile transition is proposed.

Quantitative transmission electron microscopy of small agglomerates in HF-O

1978 ◽  
Vol 36 (1) ◽  
pp. 336-337
Author(s):  
M. Rühle ◽  
G. Elssner ◽  
O. Ruano
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Plastic Deformation ◽  
Shear Stress ◽  
Physical Properties ◽  
Temperature Dependence ◽  
Hexagonal Lattice ◽  
Transmission Electron ◽  
Critical Resolved Shear Stress

High amounts of gases or carbon are soluble on interstitial sites of the hexagonal lattice of hafnium. The gas atoms influence nearly all physical properties; e.g., the critical resolved shear stress τ (CRSS) is drastically increased with an increasing content of gas atoms. Different authors measured the temperature dependence of τ for different 0 concentrations (cO ≲ 1.5 at%). The CRSS increases strongly with decreasing measuring temperature T. Ruano and Elssner concluded intuitively from the non continious shape of the τ-T curve, that besides the interstitially solved single gas atoms also agglomerates of gas atoms should be present in the specimens. These agglomerates act as strong barriers against plastic deformation. - A superposition of the 2 types of barriers (single interstitial gas atoms and agglomerates) could explain the shape of the τ-T curve. TEM studies were performed to prove this assumption of the existence of agglomerates. Hafnium specimens with different 0 content (0.13, 0.65 and 1.17 at%0) were electrolytically thinned and investigated with a Siemens ELMISKOP 102 operated at 125 kV.

Nature of Slip in γ-Titanium Aluminide Above the Yield Stress Anomaly Temperature

1998 ◽  
Vol 552 ◽  
Author(s):  
S. Jiao ◽  
N. Bird ◽  
P. B. Hirsch ◽  
G. Taylor
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Shear Stress ◽  
Yield Stress ◽  
Titanium Aluminide ◽  
Transmission Electron ◽  
Different Temperatures ◽  
Critical Resolved Shear Stress

ABSTRACTCrystals of γ-TiAl, containing ∼54.5 at% Al, with various orientations were deformed at different temperatures and examined by transmission electron microscopy (TEM). It was found that while in many cases slip and climb of ordinary dislocations tend to predominate, slip by [001] dislocations can be important also. The occurrence of [001] slip has not been reported before. The values of critical resolved shear stress were determined and strong locks on [001] dislocations have been identified as local segments of ½ ⟨112] dislocations arising from interactions between [001] and ½⟨110] dislocations.

Microstructure of SrTiO3 Thin Films as Single Layer and Incorporated in Yba2Cu3O7-x/SrTiO3 Multilayers

1995 ◽  
Vol 401 ◽  
Author(s):  
L. Ryen ◽  
E. Olssoni ◽  
L. D. Madsen ◽  
C. N. L. Johnson ◽  
X. Wang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Lattice Mismatch ◽  
Single Layer ◽  
Transmission Electron ◽  
Tilt Boundaries ◽  
Interfacial Dislocations ◽  
The Individual ◽  
Film Substrate

AbstractEpitaxial single layer (001) SrTiO3 films and an epitaxial Yba2Cu3O7-x/SrTiO3 multilayer were dc and rf sputtered on (110)rhombohedral LaAIO3 substrates. The microstructure of the films was characterised using transmission electron microscopy. The single layer SrTiO3 films exhibited different columnar morphologies. The column boundaries were due to the lattice mismatch between film and substrate. The boundaries were associated with interfacial dislocations at the film/substrate interface, where the dislocations relaxed the strain in the a, b plane. The columns consisted of individual subgrains. These subgrains were misoriented with respect to each other, with different in-plane orientations and different tilts of the (001) planes. The subgrain boundaries were antiphase or tilt boundaries.The individual layers of the Yba2Cu3O7-x/SrTiO3 multilayer were relatively uniform. A distortion of the SrTiO3 unit cell of 0.9% in the ‘001’ direction and a Sr/Ti ratio of 0.62±0.04 was observed, both in correspondence with the single layer SrTiO3 films. Areas with different tilt of the (001)-planes were also present, within each individual SrTiO3 layer.

Study of Triangle-Shaped Defects on Nearly On-Axis 4H-SiC Substrates

2016 ◽  
Vol 858 ◽  
pp. 225-228 ◽  
Author(s):  
Ren Wei Zhou ◽  
Xue Chao Liu ◽  
Hui Jun Guo ◽  
H.K. Kong ◽  
Er Wei Shi
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
High Resolution ◽  
Optical Microscopy ◽  
Epitaxial Growth ◽  
Surface Defects ◽  
Micro Raman Spectroscopy ◽  
Transmission Electron

Triangle-shaped defects are one of the most common surface defects on epitaxial growth of 4H-SiC epilayer on nearly on-axis SiC substrate. In this paper, we investigate the feature and structure of such defects using Nomarski optical microscopy (NOM), micro-Raman spectroscopy and high resolution transmission electron microscopy (HR-TEM). It is found that triangle-shaped defects were composed of a thick 3C-SiC polytype, as well as 4H-SiC epilayer.

Dislocations around precipitates in AlGaN epilayers

2002 ◽  
Vol 17 (8) ◽  
pp. 2007-2011 ◽  
Author(s):  
Junyong Kang ◽  
Shin Tsunekawa ◽  
Atsuo Kasuya
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Shear Stress ◽  
Dislocation Loop ◽  
Edge Dislocation ◽  
Concentration Change ◽  
Homogeneous Shear ◽  
Transmission Electron ◽  
Shape And Size ◽  
Chemical Force

Dislocations around precipitates in undoped AlGaN were investigated by transmission electron microscopy. The dislocation images were taken under different diffraction conditions. The dislocations are classified into two types, a pure edge dislocation loop and a close-;coiled helical dislocation. Both types of dislocations were found to depend on the shape and size of the precipitate sources. It is suggested that the pure edge dislocation loop results from homogeneous shear stress and the close-;coiled helical dislocation is caused by spherically symmetrical stress concentration at round ends of the precipitates and chemical force due to defect concentration change.

LOW-Temperature Epitaxial Growth of GaAs on Si Substrates by MBE

1992 ◽  
Vol 263 ◽  
Author(s):  
Ting-Yen Chiang ◽  
En-Huery Liu ◽  
Der-Hwa Yiin ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Defect Density ◽  
Solution Treatment ◽  
Plan View ◽  
Si Substrates ◽  
Gaas On Si ◽  
Transmission Electron

ABSTRACTThis paper presents results of the low—temperature epitaxial growth of GaAs on Si substrates with orientation 1°—4° off (100) by molecular beam epitaxy (MBE). The epitaxial growth ·is carried out on Si wafers subjected to HF solution treatment by “spin-etch” technique before the wafer is transferred to the entry chamber of MBE system. Methods used for reducing defect density in the epitaxial layers are proposed. The characterization techniques include cross-sectional transmission electron microscopy (XTEM), plan-view transmission electron microscopy, scanning electron microscopy (S EM), and double crystal X-ray diffraction (DCXRD). Epitaxial films with a full width at half—maximum (FWHM) of about 310 arcsec measured by DCXRD are obtained without annealing.-

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