On the Structure of Metal Silicide:Silicon Interfaces.

1983 ◽  
Vol 25 ◽  
Author(s):  
D. Cherns ◽  
R.C. Pond
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Interfacial Structure ◽  
Parallel Orientation ◽  
Transmission Electron ◽  
Structure Of Metal ◽  
Crystallographic Theory

ABSTRACTA new crystallographic theory of interfacial structure is applied to the case of interfaces between NiSi2, CoSi2 and Pd2Si grown epitaxially on Si. In the case of NiSi2 layers grown in parallel orientation it is shown that dislocations with Burgers vectors ¼<111> separate energetically degenerate interfacial domains on {hko} interfaces. Observations, of such defects on (001) interfaces, using transmission electron microscopy, are presented and show detailed agreement with the theory.

scholarly journals High Resolution Transmission Electron Microscopy of Metallic Film/Laser-Irradiated Alumina Couples.

1994 ◽  
Vol 357 ◽  
Author(s):  
A. J. Pedraza ◽  
Siqi Cao ◽  
L. F. Allard ◽  
D. H. Lowndes
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Copper Film ◽  
Interfacial Structure ◽  
Diffuse Interface ◽  
Cross Sectional ◽  
Polycrystalline Alumina ◽  
Near Surface ◽  
Transmission Electron

AbstractA near-surface thin layer is melted when single crystal alumina (sapphire) is pulsed laserirradiated in an Ar-4%H2 atmosphere. γ-alumina grows epitaxially from the (0001) face of axalumina (sapphire) during the rapid solidification of this layer that occurs once the laser pulse is over. Cross sectional high resolution transmission electron microscopy (HRTEM) reveals that the interface between unmelted sapphire and γ-alumina is atomistically flat with steps of one to a few close-packed oxygen layers; however, pronounced lattice distortions exist in the resolidified γ-alumina. HRTEM also is used to study the metal-ceramic interface of a copper film deposited on a laser-irradiated alumina substrate. The observed changes of the interfacial structure relative to that of unexposed substrates are correlated with the strong enhancement of film-substrate bonding promoted by laser irradiation. HRTEM shows that a thin amorphous film is produced after irradiation of 99.6% polycrystalline alumina. Formation of a diffuse interface and atomic rearrangements that can take place in metastable phases contribute to enhance the bonding strength of copper to laser-irradiated alumina.

High-Resolution Transmission Electron Microscopy of AlAs/GaAs Interfacial Structure in the Projection

1993 ◽  
Vol 32 (Part 1, No. 6A) ◽  
pp. 2824-2831 ◽  
Author(s):  
Nobuyuki Ikarashi ◽  
Masaaki Tanaka ◽  
Toshio Baba ◽  
Hiroyuki Sakaki ◽  
Koichi Ishida
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Interfacial Structure ◽  
Transmission Electron

Electron microscopy study of interfacial structure and reaction of Yba2Cu3O7/Y-ZrO2 films on LaAlO3 substrates

1998 ◽  
Vol 13 (6) ◽  
pp. 1485-1491 ◽  
Author(s):  
J. Y. Dai ◽  
F. H. Kaatz ◽  
P. R. Markworth ◽  
D. B. Buchholz ◽  
X. Liu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Interfacial Reaction ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Interfacial Structure ◽  
Reaction Products ◽  
Transmission Electron

The detailed structure and interfacial reaction of epitaxial Yba2Cu3O7/Y-ZrO2 (YBCO/YSZ) films grown by chemical vapor deposition (CVD) on LaAlO3 (LAO) substrates are investigated by means of high-resolution electron microscopy (HREM), analytical transmission electron microscopy, and scanning transmission electron microscopy (STEM). The epitaxial relations of YBCO/YSZ/LAO are [100]YBCO // [110]YSZ // [100]LAO and (001)YBCO // (001)YSZ // (001)LAO. The optimum atomic configuration at the YSZ/LAO interface, in which oxygen is the first atomic layer on LAO, is proposed by using HREM combined with image simulation based on the atomic structure models of the interface. Near the YBCO/YSZ interface, two localized interfacial reaction products are formed: (i) a Y-rich modulated ZrO2 structure at the surface of the YSZ film, which may be caused by the diffusion of Y into the YSZ grains; (ii) an intergranular BaZrO3 phase formed by the diffusion of Ba along the columnar grain boundaries of the YSZ film during YBCO growth.

Interfacial Structure of BaRuO3 Thin Films Grown On (111) SrTiO3

2000 ◽  
Vol 654 ◽  
Author(s):  
W. Tian ◽  
M. K. Lee ◽  
C. B. Eom ◽  
X. Q. Pan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Intermediate Layer ◽  
Interfacial Structure ◽  
Initial Growth ◽  
Growth Modes ◽  
Transmission Electron ◽  
Quantitative Image ◽  
Film Substrate

AbstractBaRuO3 thin films were grown on (111) SrTiO3substrate by 90° off-axis rf-sputtering. Transmission electron microscopy studies revealed that the films consist of the metastable 4H hexagonal polymorph of BaRuO3 along with few defects. The films are c-axis oriented, single crystalline with the in-plane orientation relationship with respect to the SrTiO3substrate of [112 0] BaRuO3 // [110] SrTiO3. High-resolution transmission electron microscopy (HRTEM) studies of the film-substrate interface revealed the existence of a thin intermediate layer of the 9R hexagonal polymorph of BaRuO3 between the (111) SrTiO3 substrate and the 4H film. The formation mechanism for the intermediate layer is not fully understood though. Through the combination of HRTEM and quantitative image simulations, the atomic structure of the interface between the 9R intermediate layer and the underneath (111) SrTiO3 was constructed. Three initial growth modes were observed, each of them adopting the local continuity of the oxygen octahedral sublattice across the interface.

Orientation relationship and interfacial structure between Nbsolid solution precipitates and α-Nb5Si3 intermetallics

2009 ◽  
Vol 24 (1) ◽  
pp. 192-197 ◽  
Author(s):  
G.M. Cheng ◽  
Y.X. Tian ◽  
L.L. He
Keyword(s):  
Electron Microscopy ◽  
Solid Solution ◽  
Transmission Electron Microscopy ◽  
Stress Concentration ◽  
High Resolution ◽  
Orientation Relationship ◽  
Interfacial Structure ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
High Resolution Tem

The orientation relationship (OR) and the interfacial structure between Nb solid solution (Nbss) precipitates and α-Nb5Si3 intermetallics have been investigated by transmission electron microscopy (TEM). The OR between Nbss and α-Nb5Si3 was determined by selected-area electron diffraction analyses as (222)Nb//(002)α and . High-resolution TEM images of the Nbss/α-Nb5Si3 interface were presented. Steps existed at the interface that acted as centers of stress concentration and released the distortion of lattices to decrease the interfacial energy. In addition, the interfacial models were proposed based on the observed OR to describe the atomic matching of the interface. The distribution of alloying elements at the Nbss/α-Nb5Si3 interface has also been investigated, and Hf was enriched at the interface to strengthen the grain boundary.

Interface Structure and Layer Synthesis Modes in Mesotaxial Si/CoSi2/Si Structures

1990 ◽  
Vol 183 ◽  
Author(s):  
R. Hull ◽  
Y. F. Hsieh ◽  
K. T. Short ◽  
A. E. White ◽  
D. Cherns
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Lattice Parameter ◽  
Interface Structure ◽  
Interfacial Structure ◽  
Parameter Mismatch ◽  
Alternative Method ◽  
Transmission Electron

AbstractWe report observations of interfacial structure and consequences for layer synthesis modes in mesotaxial Si/CoSi2/Si structures, as deduced from high resolution transmission electron microscopy (HRTEM). It is argued that relative crystal misalignments arising from the lattice parameter mismatch between the Si and CoSi2 may render classic rigid shift measurements of interfacial structure inaccurate. An alternative method for determining interfacial structure at threedimensional precipitates by analyzing crystal stacking sequences is demonstrated.

Imaging of Buried Si and Si:Ge Surface Structure Under Amorphous Ge Films by Plan View Transmission Electron Microscopy

1994 ◽  
Vol 332 ◽  
Author(s):  
Olof C. Hellman
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Phase Shift ◽  
Room Temperature ◽  
Real Space ◽  
Interfacial Structure ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron ◽  
Reconstructed Surface

ABSTRACTReal space plan-view Transmission Electron Microscopy (TEM) of the interfacial structure at the amorphous-Ge / Si (111) interface is presented. Ge is deposited at between room temperature and 150°C on either a 5×5 or 7×7 reconstructed surface. Conventional Plan-view TEM analysis reveals microstructural details such as surface steps, reconstruction phase shift boundaries and the reconstruction itself buried under the amorphous film, features which have previously been seen only as clean surfaces in UHV. Also imaged are small regions where Ge grows epitaxially on the Si surface above room temperature. These are seen to appear preferentially at steps and phase shift boundaries.

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