Crystallography and Interfaces of Epitaxial Fluorite Metals and Insulators on Semiconductors

1983 ◽  
Vol 25 ◽  
Author(s):  
J.M. Gibson ◽  
R.T. Tung ◽  
J.M. Phillips ◽  
J.M. Poate
Keyword(s):  
Thin Films ◽  
Silicon Germanium ◽  
Thermal Processing ◽  
Growth Parameters ◽  
Laser Pulses ◽  
High Resolution Electron Microscopy ◽  
Fluorite Structure ◽  
Resolution Electron ◽  
Small Lattice ◽  
Transient Thermal

ABSTRACTCrystals with the cubic fluorite structure and small lattice mismatches can be grown epitaxially on cubic semiconductors. In this manner thin-film single-crystal metals (NiSi2 and CoSi2) and insulators (e.g. CaF2 , BaF2) have been grown on silicon, germanium and indium phosphide. With close attention to deposition and growth parameters, afforded either by atomically clean conditions or transient thermal processing, great control can be exerted over the crystallography and interfaces of these systems. This has resulted in films with unique physical properties and exceptionally high quality and reproducibility. We review the microstructure of these films in this paper and identify two important new growth regimes for these materials: very thin films (less than 30Å) and transient thermal processing with ultra-fast laser pulses. Examination of the structure of these films, using high-resolution electron microscopy, provides insight into these nucleation and growth processes. One intriguing observation is that all these fluorite structure thin films have an overwhelming tendency to grow with a 180° rotated orientation (B) on (111) semiconductors.

Combinatorial Synthesis Approach for Optimizing Oxide/Si Interfaces for the Future Ulsi

2001 ◽  
Vol 700 ◽  
Author(s):  
T. Chikyow ◽  
P. Ahmet ◽  
T. Naruke ◽  
K. Nakajima ◽  
N. Okazaki ◽  
...  
Keyword(s):  
Dielectric Property ◽  
Growth Parameters ◽  
Heating System ◽  
High Resolution Electron Microscopy ◽  
Material Synthesis ◽  
Amorphous Oxide ◽  
Intermediate Layers ◽  
Resolution Electron ◽  
Abrupt Interface ◽  
Interface Structures

AbstractA combinatorial material synthesis with temperature gradient heating system was employed to optimizing growth parameters for oxide growth on Si substrate. From the obtained results, it was found the dielectric property depends on the growth temperature as well as the composition. The interface structures were investigated by high resolution electron microscopy with a series of specimens fabricated by micro sampling method. The results showed that amorphous oxide region and SiO2 layer were formed at the interface. It was speculated that the amorphous oxide region contributed to the reduction of the dielectric property. To avoid the amorphous and SiO2 formation at the oxide/Si interface, a few kinds of intermediate layers were inserted and tested to find the possibility of abrupt interface formation.

Recent studies of thin films and surfaces by high-Resolution electron microscopy

1992 ◽  
Vol 23 (4) ◽  
pp. 1063-1070
Author(s):  
David J. Smith ◽  
Rob W. Glaisher ◽  
Z. G. Li ◽  
Ping Lu ◽  
M. R. McCartney ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron

High-resolution electron microscopy study of SiGeC thin films grown on Si(100) by laser-assisted techniques

2006 ◽  
Vol 252 (13) ◽  
pp. 4527-4530
Author(s):  
Ch.B. Lioutas ◽  
N. Frangis ◽  
S. Soumelidis ◽  
S. Chiussi ◽  
E. López ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Resolution Electron

High-resolution electron microscopy investigations of stacking faults in Y1Ba2Cu3O7−δ metalorganic chemical vapor deposited thin films

1999 ◽  
Vol 14 (7) ◽  
pp. 2732-2738 ◽  
Author(s):  
Ch. Grigis ◽  
S. Schamm ◽  
D. Dorignac
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Image Matching ◽  
Chemical Vapor ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Chemical Vapor Deposited ◽  
Structural Imperfections ◽  
Metalorganic Chemical

New structural planar defects in Ba-deficient Y1Ba2Cu3O7−δ (YBCO) (1:1.6:3) thin films grown on NdGaO3 and SrTiO3 substrates by metalorganic chemical vapor deposition have been observed by means of high-resolution electron microscopy. The defects are associated with perturbations of the YBCO “1:2:3” stacking sequences along the c direction, which give rise to structural variants with locally “2:5:7,” “3:4:7,” or “4:6:10” cationic stoichiometries. The defects can be consistently interpreted as CuO–YO–CuO/CuO conversions or YO/BaO (BaO/YO) interconversions in the (a,b) planes and extending over a few nanometers along the c axis. Structural models based on image matching with simulations are proposed for two particular cases. It is thought that these structural imperfections can be effective sites of flux pinning.

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