Effects on Metal/Metal-Oxide Interface Adhesion Due to Electron and Ion Irradiation

1983 ◽  
Vol 25 ◽  
Author(s):  
J. Bøttiger ◽  
J. E. E. Baglin ◽  
V. Brusic ◽  
G. J. Clark ◽  
D. Anfiteatro
Keyword(s):  
Thin Film ◽  
Ion Irradiation ◽  
Substantial Improvement ◽  
Stopping Power ◽  
Oxide Interface ◽  
Copper Thin Film ◽  
Nuclear Stopping ◽  
Metal Metal ◽  
Different Types ◽  
Power Component

ABSTRACTThe influence of electron and ion irradiation on the adhesion at chromium-copper thin film interfaces has been studied. The measurements were carried out with different types and thicknesses of well-characterized oxides at the interfaces. The electron energies were varied between 5 and 10 keV, with doses up to 10 18cm −2. lons of He +Ne+and P+ were used in the range of energies between 150 keVand 1.0 MeV, with fluences ranging from 1015 cm−2 to 6× 10 16cm−2 . Substantial improvement of the adhesion is observed in cases where the beam has a significant nuclear stopping power component. Electronic processes may also play a role in improving adhesion, although they are not dominant in the case of the present films.

scholarly journals Strain/Damage in Crystalline Materials Bombarded by MeV Ions: Recrystallization of GaAs by High-Dose Irradiation

1984 ◽  
Vol 35 ◽  
Author(s):  
C. R. Wie ◽  
T. Vreeland ◽  
T. A. Tombrello
Keyword(s):  
Surface Layer ◽  
Energy Loss ◽  
Ion Irradiation ◽  
Stopping Power ◽  
High Dose ◽  
Double Crystal ◽  
Saturation Phenomenon ◽  
Nuclear Stopping ◽  
X Ray ◽  
Dose Irradiation

ABSTRACTMeV ion irradiation effects on semiconductor crystals, GaAs(100) and Si (111) and on an insulating crystal CaF2 (111) have been studied by the x-ray rocking curve technique using a double crystal x-ray diffractometer. The results on GaAs are particularly interesting. The strain developed by ion irradiation in the surface layers of GaAs (100) saturates to a certain level after a high dose irradiation (typically 1015/cm2), resulting in a uniform lattice spacing about 0.4% larger than the original spacing of the lattice planes parallel to the surface. The layer of uniform strain corresponds in depth to the region where electronic energy loss is dominant over nuclear collision energy loss. The saturated strain level is the same for both p-type and n-type GaAs. In the early stages of irradiation, the strain induced in the surface is shown to be proportional to the nuclear stopping power at the surface and is independent of electronic stopping power. The strain saturation phenomenon in GaAs is discussed in terms of point defect saturation in the surface layer.An isochronal (15 min.) annealing was done on the Cr-doped GaAs at temperatures between 200° C and 700° C. The intensity in the diffraction peak from the surface strained layer jumps at 200° C < T ≤ 300° C. The strain decreases gradually with temperature, approaching zero at T ≤ 500° C.The strain saturation phenomenon does not occur in the irradiated Si. The strain induced in Si is generally very low (less than 0.06%) and is interpreted to be mostly in the layers adjacent to the maximum nuclear stopping region, with zero strain in the surface layer. The data on CaF2 have been analysed with a kinematical x-ray diffraction theory to get quantitative strain and damage depth profiles for several different doses.

CVD copper thin film deposition using (α-methylstyrene)Cu(I)(hfac)

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-553-Pr3-560 ◽  
Author(s):  
W. Zhuang ◽  
L. J. Charneski ◽  
D. R. Evans ◽  
S. T. Hsu ◽  
Z. Tang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Copper Thin Film

Noise properties of thin-film Ni-P resistors embedded in printed circuit boards

2013 ◽  
Vol 61 (3) ◽  
pp. 731-735
Author(s):  
A.W. Stadler ◽  
Z. Zawiślak ◽  
W. Stęplewski ◽  
A. Dziedzic
Keyword(s):  
Thin Film ◽  
Printed Circuit Boards ◽  
Circuit Boards ◽  
Noise Component ◽  
Printed Circuit ◽  
Resistance Bridge ◽  
Different Types ◽  
Signal Path ◽  
Resistance Fluctuations ◽  
Made In

Abstract. Noise studies of planar thin-film Ni-P resistors made in/on Printed Circuit Boards, both covered with two different types of cladding or uncladded have been described. The resistors have been made of the resistive-conductive-material (Ohmega-Ply©) of 100 Ώ/sq. Noise of the selected pairs of samples has been measured in the DC resistance bridge with a transformer as the first stage in a signal path. 1/f noise caused by resistance fluctuations has been found to be the main noise component. Parameters describing noise properties of the resistors have been calculated and then compared with the parameters of other previously studied thin- and thick-film resistive materials.

Electrochemical Immunosensors Based on Nanostructured Materials for Sensing of Prostate-Specific Antigen: A Review

2020 ◽  
Vol 28 ◽  
Author(s):  
Hayati Filik ◽  
Asiye Aslıhan Avan ◽  
Mustafa Özyürek
Keyword(s):  
Prostate Specific Antigen ◽  
Nanostructured Materials ◽  
Specific Antigen ◽  
Electrochemical Immunosensor ◽  
Label Free ◽  
Electrochemical Immunosensors ◽  
Metal Metal ◽  
Different Types ◽  
Sandwich Type ◽  
Carbon Based Nanomaterials

: The prostate-specific antigen (PSA) has been considered a crucial serological marker for distinguishing prostate based cancer. This surveys recent progress in the construction of nanomaterial-based electrochemical immunosensors for a PSA. This review (from 2015 to 2020) reports the latest progress in PSA sensing based on the employ of different types of nanostructured materials. The most popular used nanostructured materials are metal, metal oxide, carbon-based nanomaterials, and their hybrid architectures utilized for distinct amplification protocols. In this review, the electrochemical immunosensors for prostate-specific antigen sensing are classified into three categories such as sandwich type@labeled, label free@nonlabeled and aptamer-based electrochemical immunosensor.

Surface to bulk charge transfer at an alkali metal/metal oxide interface

2003 ◽  
Vol 547 (1-2) ◽  
pp. L859-L864 ◽  
Author(s):  
R Lindsay ◽  
E Michelangeli ◽  
B.G Daniels ◽  
M Polcik ◽  
A Verdini ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Alkali Metal ◽  
Metal Oxide ◽  
Oxide Interface ◽  
Metal Metal ◽  
Bulk Charge
Sign in / Sign up

Export Citation Format

Share Document