Ba2YCu3O7−x Thin Films with Jc>105 A/cm2 at 77 K Prepared by Metalorganic Deposition at Reduced Oxygen Pressure

1991 ◽  
Vol 249 ◽  
Author(s):  
Robert B. Hallock ◽  
W.E. Rhine ◽  
M.S. Jolly ◽  
MIchael J. Cima
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Total Pressure ◽  
Applied Field ◽  
Methanol Solution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metalorganic Deposition ◽  
Zero Resistance ◽  
Current Densities

ABSTRACTSuperconducting Ba2YCu3O7-x films 0.1-0.2 gim thick were prepared by spin coating a methanol solution of Ba, Y and Cu acrylates on (100)LaAlO3 and firing to 800°C in a total pressure of 1 mm O2. X-ray diffraction showed that these films were epitaxial with the c-axis normal to the substrate. Zero resistance was achieved above 90 K and transport DC critical current densities as high as 125,000 A/cm2 were measured at 77 K in zero applied field.

Sol-Gel derived Bi4-xNdxTi3O12 Thin Films and Their Characterization

2002 ◽  
Vol 737 ◽  
Author(s):  
R.E. Melgarejo ◽  
M.S. Tomar ◽  
A. Hidalgo ◽  
R.S. Katiyar
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Bismuth Titanate ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Complete Solid Solution ◽  
Sol Gel Process ◽  
Ferroelectric Memory ◽  
Initial Results

ABSTRACTNd substituted bismuth titanate Bi4-xNdxTi3O12 were synthesized by sol-gel process and thin films were deposited on Pt substrate (Pt/TiO2/SiO2/Si) by spin coating. Thin films, characterized by X-ray diffraction and Raman spectroscopy, shows complete solid solution up to the composition x < 1. Initial results indicate that the ferroelectric polarization increases with increasing Nd content in the film with 2Pr = 50μC/cm2 for x = 0.46, which may have application in non-volatile ferroelectric memory devices.

Synthesis, Characterization and Optical Properties of PLA / P3HT Blends Thin Films

2021 ◽  
Vol 19 (5) ◽  
pp. 132-138
Author(s):  
Maan Abd-Alameer Salih ◽  
Q.S. Kareem ◽  
Mohammed Hadi Shinen
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spin Coating ◽  
Ring Opening ◽  
Energy Gap ◽  
Ring Opening Polymerization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Conductivity Increase ◽  
Ft Ir

In this exploration Poly lactic corrosive (PLA) was orchestrated the ring-opening polymerization Poly lactic corrosive (PLA) blended with poly(3-hexylthiophene) (P3HT) which prepared by solution. Blends thin films Synthesis by spin coating technique and using Tetrahydrofuran (THF) as solvent. PLA powder was 'characterized by' 'X-ray' 'diffraction', '(FT-IR)'. pure Optical properties (PLA), (PLA)/P3HT blends thin films with different percentage of P3HT (0, 1, 2, and 3) wt% were investigated using UV-VS spectroscopy The results showed that the absorption, absorption coefficient, extinction coefficient and conductivity increase with increasing the rate of deformation P3HT, The energy gap decreases with increasing deformation.

Synthesis and Characterizations of Strontium Substituted Hydroxyapatite Thin Films

2010 ◽  
Vol 93-94 ◽  
pp. 231-234
Author(s):  
B. Hongthong ◽  
Satreerat K. Hodak ◽  
Sukkaneste Tungasmita
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Composition ◽  
Spin Coating ◽  
Phase Structure ◽  
Sol Gel ◽  
Cross Linking ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process

Strontium substituted hydroxyapatite(SrHAp) were fabricated both in the form of powder as reference and thin film by using inorganic precursor reaction. The sol-gel process has been used for the deposition of SrHAp layer on stainless steal 316L substrate by spin coating technique, after that the films were annealed in air at various temperatures. The chemical composition of SrHAp is represented (SrxCa1-x)5(PO4)3OH, where x is equal to 0, 0.5 and 1.0. Investigations of the phase structure of SrHAp were carried out by using X-ray diffraction technique (XRD). The results showed that strontium is incorporated into hydroxyapatite where its substitution for calcium increases in the lattice parameters, and Sr3(PO4)2 can be detected at 900°C. The SEM micrographs showed that SrHAp films exhibited porous structure before develop to a cross-linking structure.

EFFECT OF GRAIN SIZE ON THE FERROELECTRIC PROPERTIES OF Bi3.25La0.75Ti3O12 Thin Films

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4469-4474 ◽  
Author(s):  
KYOUNG-TAE KIM ◽  
CHANG-IL KIM ◽  
DONG-HEE KANG ◽  
IL-WUN SHIM
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Fatigue Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Densities ◽  
Metalorganic Decomposition ◽  
Small Grains

The Bi 3.25 La 0.75 Ti 3 O 12 (BLT) thin films were prepared by metalorganic decomposition method. The effect of grain size on the ferroelectric properties during crystallization were investigated by x-ray diffraction and field emission scanning electron microscope. The grain size and the roughness of BLT films increase with increasing of drying temperature. The leakage current densities of the BLT thin film with large grains are higher than that with small grains. The remanent polarization of BLT increase with increasing grain size. As compared BLT with small grain size, the BLT film with larger grain size shows better fatigue properties. This may be explained that small grained films shows more degradation of switching charge than large grained films.

X-ray Line Broadening Analysis of Tl-Superconducting Films

1989 ◽  
Vol 33 ◽  
pp. 145-151
Author(s):  
M. O. Eatough ◽  
D. S. Ginley ◽  
B. Morosin
Keyword(s):  
Thin Films ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Superconducting Thin Films ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Densities ◽  
Diffraction Peaks ◽  
Sequential Electron

AbstractSuperconducting thin films (0.3-0.7μm) in the TI-Ca-Ba-Cu-0 system have been prepared on various single crystal substrates by sequential electron beam evaporation followed by appropriate sintering and annealing. Oxygen-annealed films show Tc as high as 110K and critical current densities to 600,000 A/cm2. X-ray diffraction analyses of these films show predominantly the Tl2Ca2Ba2Cu2O10 phase (c-parameter near 36Å), but some also contain up to 50 at% of the Tl2CaBa2Cu2O8 phase (c-parameter near 30Å). The complete absence of hkl reflections other than 00I demonstrates the highly oriented nature of the films as well as the absence of other Tl phases. The diffraction peaks are noticeably broader for the 36Å phase than for the 30Å phase. For a 0.7μm film such broadening is consistent with coherent sizes along the c-axis of 1200 - 1400Å and 500Å, respectively, for the 30Å and 36Å phases, and of strain values near 1.4-1.8 x 10-3 for both phases.

EPITAXIALLY GROWN YBCO THIN FILMS ON LOW LOSS LaAlO3 SUBSTRATE

1990 ◽  
Vol 04 (05) ◽  
pp. 369-373 ◽  
Author(s):  
Y. Z. ZHANG ◽  
L. LI ◽  
Y. Y. ZHAO ◽  
B. R. ZHAO ◽  
Y. G. WANG ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Low Loss ◽  
X Ray ◽  
Ybco Thin Films ◽  
Zero Resistance ◽  
Scanning Electron

A planar dc magnetron sputtering device was used to prepare high T c and high J c YBCO thin films. Both single crystal and polycrystal thin films were successfully grown on (100) oriented LaAlO 3 substrates. Zero resistance temperature T c0 = 92.3 K and critical current density J c (0) = 3.82 × 106 A/cm 2 at 77 K was obtained. The films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM).

YBa2Cu3O7−x THIN FILMS GROWN ON SAPPHIRE WITH EPITAXIAL YTTRIA-STABILIZED ZrO2 BUFFER LAYER

1993 ◽  
Vol 07 (27) ◽  
pp. 1741-1746
Author(s):  
S.F. XU ◽  
Y.J. TIAN ◽  
H.B. LÜ ◽  
Y.L. ZHOU ◽  
Z.H. CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Depth Profile ◽  
Ybco Film ◽  
Ybco Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Auger Depth Profile ◽  
Zero Resistance ◽  
Influence Of Substrate

We have successfully fabricated high-quality YBa 2 Cu 3 O 7−x (YBCO) thin films grown on sapphire with epitaxial Yttria-Stabilized ZrO 2 (YSZ) buffer layer by pulsed laser deposition. X-ray diffraction and Auger depth profile were used to characterize these thin films. The values of zero-resistance temperature Tco and critical current density J c (at 77 K) of c-axis oriented YBCO thin film with 500 Å-YSZ buffer layer were 91 K and 2.2×106 A/cm 2, respectively. The Auger depth profile showed that no obvious diffusion occurred between the buffer layer and the YBCO film. The influence of substrate temperature and thickness of buffer layer has been investigated.

HIGH-QUALITY Tl2Ba2Ca2Cu3O10 THIN FILMS FABRICATED VIA LASER ABLATION

1993 ◽  
Vol 07 (01) ◽  
pp. 19-23 ◽  
Author(s):  
W. A. LUO ◽  
Y. Q. TANG ◽  
Y. Z. CHEN ◽  
I. N. CHAN ◽  
K. Y. CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Critical Current Density ◽  
Current Density ◽  
Superconducting Thin Films ◽  
X Ray Diffraction ◽  
High Quality ◽  
Step Process ◽  
X Ray ◽  
Zero Resistance

In this letter, we describe results obtained via laser ablation to fabricate Tl 2 Ba 2 Ca 2 Cu 3- O 10 superconducting thin films using a two-step process. We found that the zero-resistance temperatures are up to 121 K, while the onset temperatures are up to 125 K. The T c and J c are mainly determined by a non-contact new technique for high-T c films. The typical critical current density, J c , is about 106 A/cm 2 at 77 K. X-ray diffraction showed that the superconducting thin films are nearly single 2223 phase and are highly oriented.

STUDY OF SUPERCONDUCTING Y-BA-CU-O THIN FILMS WITH ZERO RESISTANCE TEMPERATURE AT 77K

1987 ◽  
Vol 01 (02) ◽  
pp. 571-574
Author(s):  
Jia-qi Zheng ◽  
Guo-guang Zheng ◽  
Dong-qi Li ◽  
Wei Wang ◽  
Jin-min Xue ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Electron Beam ◽  
High Vacuum ◽  
Vacuum System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zero Resistance

Y-Ba-Cu-O thin films are deposited onto severval kinds of substrates by electron beam evaporating in a high vacuum system. After the heat treatment at 850–890°c for 1hr the Y-Ba-Cu-O films on the BaF2 substrates show superconducting behaviors with the midpoint Tc around 87K and zero resistance temperature at 77K. The composition and stucture analysis of these films have been studied by AES, XRFS and x-ray diffraction.

scholarly journals Effect of Annealing Temperature On Iron Doped Titanium Dioxide Thin Films Prepared By Spin Coating Technique

2016 ◽  
Vol 2 (02) ◽  
pp. 61
Author(s):  
Mukhtar Effendi ◽  
Bilalodin B
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Spin Coating ◽  
Annealing Temperature ◽  
Spin Coating Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Coating Technique ◽  
Doped Titanium Dioxide ◽  
Titanium Dioxide Thin Films

<span>Iron (Fe) doped titanium dioxide (TiO<span>2<span>) thin films have been successfully deposited by <span>using spin coating technique. X-ray diffraction (XRD) and Scanning Electron Microscope <span>(SEM) were employed to characterize the microstructure and crystallite morphology of the <span>films. It was indicated that the rutile crystal orientation appears due to increasing annealing <span>temperature of the thin films. Furthermore, increasing annealing temperature of the thin <span>films yielded an increasing of porosity value which is related to the application on gas <span>sensor films.</span></span></span></span></span></span><br /></span></span></span>

Sign in / Sign up

Export Citation Format

Share Document