Polarization Dependent Photocurrent in Thin Film Polydiacetylene Single Crystals

1992 ◽  
Vol 247 ◽  
Author(s):  
Y. Yang ◽  
J. Y. Lee ◽  
L. Li ◽  
J. Kumar ◽  
A. K. Jain ◽  
...  
Keyword(s):  
Thin Film ◽  
Steady State ◽  
Single Crystals ◽  
Incident Light ◽  
Light Polarization ◽  
Sample Temperature

ABSTRACTThe photocurrent behavior in polydiacetylene (PDA) single crystals of PTS (poly-(2, 4-hexadiyne-1, 6-diol bis(p-toluenesulfonate)) and MADF (poly-(1-(3-(methylamino)phenyl)-4-(3, 5-bis (trifluoromethyl)-phenyl) butadiyne)) have been investigated by using steady state photoconductivity measurements. These measurements were carried out as a function of sample temperature and incident light polarization. PTS and MADF show completely different behavior in these measurements. These differences between PTS and MADF suggest that the side groups of PDA strongly influence the photocurrent behavior in PDA.

Steady State and Transient Photoconductivity of Thin Film Polydiacetylene Single Crystals

1990 ◽  
Vol 214 ◽  
Author(s):  
Y. Yang ◽  
J. Y. Lee ◽  
P. Miller ◽  
L. Li ◽  
J. Kumar ◽  
...  
Keyword(s):  
Thin Film ◽  
Steady State ◽  
Single Crystals ◽  
Drift Velocity ◽  
Incident Light ◽  
Light Polarization ◽  
Transport Mechanisms ◽  
Carrier Generation ◽  
Electric Field Dependence ◽  
Transient Photoconductivity

ABSTRACTCharge carrier generation and transport mechanisms in polydiacetylene thin film single crystals., poly-PTS (2,4-hexadiyne-1,6-diol bis(p-toluenesulfonate)) and poly- BTFP (bis-(4-n-butyl-2,3,5,6-tetra-fluorophenyl) butadiyne), are studied by using steady state and transient photoconductivity techniques. The electric field dependence of the steady state photocurrent is superlinear for both samples. Dependence of photocurrent on incident light polarization has been investigated. The polarization dependence of photocurrent has completely different behavior for the polydiacetylene PTS and BTFP. Single-gap transmission line experiment has been designed to directly measure the drift velocity of PTS single crystals. A drift velocity of the order of 106cm/s was measured.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Phenethylammonium bismuth halides: from single crystals to bulky-organic cation promoted thin-film deposition for potential optoelectronic applications

2019 ◽  
Vol 7 (36) ◽  
pp. 20733-20741 ◽  
Author(s):  
Mehri Ghasemi ◽  
Miaoqiang Lyu ◽  
Md Roknuzzaman ◽  
Jung-Ho Yun ◽  
Mengmeng Hao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Single Crystals ◽  
Organic Cation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Optoelectronic Applications ◽  
Excellent Stability

The phenethylammonium cation significantly promotes the formation of fully-covered thin-films of hybrid bismuth organohalides with low surface roughness and excellent stability.

Detection Limit of Large Area Id Thin Film Position Sensitive Detectors Based in a-Si:H P.I.N. Diodes

1995 ◽  
Vol 377 ◽  
Author(s):  
R. Martins ◽  
G. Lavareda ◽  
F. Soares ◽  
E. Fortunato
Keyword(s):  
Thin Film ◽  
Experimental Data ◽  
Steady State ◽  
Detection Limit ◽  
Large Area ◽  
Position Sensitive ◽  
Position Sensitive Detectors

ABSTRACTThe aim of this work is to provide the basis for the interpretation of the steady state lateral photoeffect observed in p-i-n a-Si:H ID Thin Film Position Sensitive Detectors (ID TFPSD). The experimental data recorded in ID TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.

Illumination Effect on Electrical Characteristics of Poly(3-hexylthiophene): TIPS-Pentacene Blend Thin-Film Transistor

2021 ◽  
Vol 21 (7) ◽  
pp. 3829-3834
Author(s):  
Hyunji Shin ◽  
Jaehoon Park ◽  
Jong Sun Choi
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Incident Light ◽  
Thin Film Transistor ◽  
Electrical Characteristics ◽  
Light Spectrum ◽  
Absorption Properties ◽  
Threshold Voltages ◽  
Component Material ◽  
Color Filters

Organic phototransistors capable of absorbing in the visible light spectrum without color filters are the best alternatives to conventional inorganic phototransistors. In this study, the effect of illumination on the electrical characteristics of a solution-processed poly(3-hexylthiophene): 6,13-bis(triisopropylsilylethynyl) pentacene-blend thin-film transistor (TFT) was investigated. The wavelengths of the irradiated light were determined from the absorbance spectrum of the blended film and changes in the transistor’s electrical characteristics were explained in relation to the electrical and light absorption properties of each component material. The photosensitivity and absorbing properties of the blended TFT were enhanced at 515 and 450 nm and exhibited positively shifted threshold voltages under incident light. The results indicated that the photo-generated exci-ton pair characteristics matched the absorbance properties of the blended material and that the absorption and photocurrent characteristics of the respective components could be combined. This process for the heterogeneous blending of organic semiconductors has the potential to improve phototransistor performance and contribute to the development of broadband absorbing phototransistors.

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