scholarly journals Yb3+ Sensitised Er3+ Doped Silica Optical Fibre with Ultra High Transfer Efficiency and Gain

1991 ◽  
Vol 244 ◽  
Author(s):  
J. E. Townsend ◽  
W. L. Barnes ◽  
S. G. Crubb
Keyword(s):  
Energy Transfer ◽  
Output Power ◽  
Power Amplifier ◽  
Energy Transfer Efficiency ◽  
Transfer Efficiency ◽  
Design Parameters ◽  
Small Signal Gain ◽  
Small Signal ◽  
Multicomponent Glass ◽  
Silica Fibre

ABSTRACTEfficient 1.54 μm emission under 1064nm excitation of Er3+/Yb3+ codoped silica fibre is reported. The energy transfer efficiency from Yb3+ to Er3+, of at least 85%, even under high inversion, is comparable to that in multicomponent glass fibres. Fibre design parameters are discussed and results presented. Small signal gain of ˜ 45dB is also measured and a power amplifier giving 145mW output power demonstrated.

scholarly journals High Power Diode-Pumped Erbium Laser Emitting at Near 1.5 μm

2021 ◽  
Vol 12 (2) ◽  
pp. 91-97
Author(s):  
K. N. Gorbachenya ◽  
V. E. Kisel ◽  
A. S. Yasukevich ◽  
E. V. Koporulina ◽  
E. A. Volkova ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Output Power ◽  
Spectral Range ◽  
Slope Efficiency ◽  
Communication Systems ◽  
Continuous Wave ◽  
Emission Cross Section ◽  
Energy Transfer Efficiency ◽  
Transfer Efficiency ◽  
Range Finding

Solid-state lasers emitting in the 1.5–1.6 μm spectral range are very promising for eye-safe laser range finding, ophthalmology, fiber-optic communication systems, and optical location. The aim of this work is the investigation of spectrosposcopic and laser properties of gain medium based on borate crystal for abovementioned lasers.Spectroscopic and laser properties of Er,Yb:YAl3(BO3)4 crystals with different concentrations of dopants were investigated. Polarized absorption and emission cross-section spectra were determined. The ytterbium- erbium energy transfer efficiency was estimated. The maximal energy transfer efficiency up to 97 % was obtained for Er(4 at.%),Yb(11 at.%):YAl3(BO3)4 crystal.The laser operation of heavily doped crystals with erbium concentration up to 4 аt.% (2.2^1020 cm^3) was realized. By using of Er(2 at.%),Yb(11 at.%):YAl3(BO3)4 crystal a maximal continuous- wave (CW) output power of 1.6 W was obtained at 1522 nm with slope efficiency of 32 %. By using of Er(4 at.%),Yb(11 at.%):YAl3(BO3)4 crystal a maximal peak output power up to 2.2 W with slope efficiency of 40 % was realized in quasi-continuous-wave regime of operation. The spatial profile of the output beam was close to TEM00 mode with M2 < 1.2 during all laser experiments.Based on the obtained results, it can be concluded that Er,Yb:YAl3(BO3)4 crystals are promising active media for lasers emitting in the spectral range of 1.5-1.6 pm for the usage in laser rangefinder and laser- induced breakdown spectroscopy systems, and LIDARs.

scholarly journals Continuous-wave Laser on Er,Yb-Codoped Pentaborate Crystal

2019 ◽  
Vol 10 (4) ◽  
pp. 301-307
Author(s):  
K. N. Gorbachenya ◽  
V. E. Kisel ◽  
R. V. Deineka ◽  
A. S. Yasukevich ◽  
N. V. Kuleshov ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Absorption Spectra ◽  
Output Power ◽  
Slope Efficiency ◽  
Continuous Wave ◽  
Energy Transfer Efficiency ◽  
Transfer Efficiency ◽  
Continuous Wave Laser ◽  
Laser Performance ◽  
Wave Laser

We report, for the first time to our knowledge, a diode-pumped continuous-wave microchip Er,Yb:YMgB5O10 laser. The purpose of this work was to study the growth technique, spectroscopic properties and continuous-wave laser performance of Er3+,Yb3+:YMgB5O10 novel crystal. Absorption and luminescence spectra as well as kinetics of luminescence decay were studied. Ytterbium-erbium energy transfer efficiency was determined. The output characteristics (output power, slope efficiency, laser wavelength) of Er3+,Yb3+:YMgB5O10 laser were determined.Two intensive absorption bands with peaks centered at 937 nm and 976 nm were observed in the absorption spectra at the wavelength near 1 μm. The maximum value of absorption cross-section was determined to be 1.5·10–20 cm2 at 976 nm for polarization E//Ng . A number of narrow lines were observed in the absorption spectra in the 1425–1575 nm spectral range (transition 4I15/2 → 4I13/2 of erbium ions). The lifetime of the upper laser level 4I13/2 of Er3+ ions was determined to be 390 ± 20 μs. The ytterbium-erbium energy transfer efficiency for YMgB5O10 crystal with 2 at.% of Er3+ and 11 at.% for Yb3+ was close to 84 %. The maximal continuous-wave output power of 0.2 W with slope efficiency of 8 % regarding to absorbed pump power was realized at the wavelength of 1570 nm. With the improvement of cavity parameters the output laser performance of the Er,Yb:YMgB5O10 crystal can be further enhanced.Taking into account high thermal conductivity of ≈ 6.2 W·m–1·K–1, the Er,Yb:YMgB5O10 crystal can be considered as a good gain medium for 1.5 μm lasers for applications in laser rangefinder and LIDAR systems.

The study of intramolecular decay and intermolecular energy transfer for phosphorescent organic light-emitting devices

2021 ◽  
Vol 23 (12) ◽  
pp. 7495-7503
Author(s):  
Wanlin Cai ◽  
Kai Ren ◽  
Ancong Zhao ◽  
Xiulan Wu ◽  
Rongxing He ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Rational Design ◽  
Energy Transfer Efficiency ◽  
Transfer Efficiency ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Intermolecular Energy ◽  
Intermolecular Energy Transfer ◽  
Organic Light Emitting Devices

Compared to the PtOO7-based system, the greater EQE of the PtON7-based system is mainly governed by the stronger energy transfer efficiency (ηEET); thus, it is necessary to evaluate ηEET from hosts to guests for the rational design of OLEDs.

Optimization of InP DHBT stacked-transistors for millimeter-wave power amplifiers

2018 ◽  
Vol 10 (9) ◽  
pp. 999-1010 ◽  
Author(s):  
Michele Squartecchia ◽  
Tom K. Johansen ◽  
Jean-Yves Dupuy ◽  
Virginio Midili ◽  
Virginie Nodjiadjim ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Output Power ◽  
Heterojunction Bipolar Transistors ◽  
Power Amplifiers ◽  
Small Signal Gain ◽  
Small Signal ◽  
Large Signal ◽  
Signal Gain ◽  
Power Added Efficiency ◽  
Saturated Output Power

AbstractIn this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-signal effects and layout-related limitations. An evaluation of the maximum number of transistors for positive incremental power and gain is also carried out. To validate the analysis, E-band three- and four-stacked InP DHBT matched power cells have been realized for the first time as monolithic microwave integrated circuits (MMICs). For the three-stacked transistor, a small-signal gain of 8.3 dB, a saturated output power of 15 dBm, and a peak power added efficiency (PAE) of 5.2% have been obtained at 81 GHz. At the same frequency, the four-stacked transistor achieves a small-signal gain of 11.5 dB, a saturated output power of 14.9 dBm and a peak PAE of 3.8%. A four-way combined three-stacked MMIC power amplifier has been implemented as well. It exhibits a linear gain of 8.1 dB, a saturated output power higher than 18 dBm, and a PAE higher than 3% at 84 GHz.

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