Dielectric Constant and Hysteresis Loop Remanent Polarization from 100 Hz to 2 MHz for Thin Ferroelectric Films

1991 ◽  
Vol 243 ◽  
Author(s):  
K. W. Bennett ◽  
P. S. Brody ◽  
B. J. Rod ◽  
L. P. Cook ◽  
P. K. Schenck ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Domain Wall ◽  
Hysteresis Loop ◽  
Lead Zirconate Titanate ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Ferroelectric Films ◽  
Domain Wall Velocity ◽  
Ferroelectric Hysteresis

AbstractA modification of the standard Sawyer-Tower circuit method of displaying ferroelectric hysteresis allowed the technique to be extended to sinusoidal switching frequencies of 2 MHz. Using this method, probe station measurements of switched remanent polarization were made for two films: excimer-laser-deposited lead zirconate titanate (PZT) and sol-gel PZT. Switched remanent polarization and dielectric constant were measured as a function of frequency between 100 Hz and 2 MHz and as a function of elapsed switching cycles at the 1-MHz rate. Both films showed decreasing switched remanent polarization and dielectric constant with increasing frequencies. This effect is attributed to limitations in domain wall velocity.

scholarly journals Studies of Sr2+ ion substitution on ferroelectric and piezoelectric properties of PZT nanocrystalline

Cerâmica ◽  
2013 ◽  
Vol 59 (349) ◽  
pp. 34-38 ◽  
Author(s):  
P. Kour ◽  
S. K. Sinha
Keyword(s):  
Lead Zirconate Titanate ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Lead Zirconate ◽  
X Ray Diffraction ◽  
Field Range ◽  
Saturation Polarization ◽  
Ion Substitution ◽  
Ferroelectric Hysteresis ◽  
Loop Measurement

Strontium substituted lead zirconate titanate nanocrystalline material with chemical formula Pb0.95Sr0.05 (Zr0.52Ti0.48) O3 have been synthesized by alkoxide based sol gel method. The product was characterized by differential thermal analysis, thermogravimetric analysis, powder X-ray diffraction and scanning electron microscopy. The ferroelectric hysteresis loop measurement was carried out at room temperature using ferroelectric loop tracer over a field range of 20 kV/cm. The remanent polarization Pr, saturation polarization Pmax and coercive field Ec were 12.97 µC/cm², 30.52 µC/cm² and 6.5 kV/cm respectively. The piezoelectric coefficient d33 was measured with the variation of polling field.

Thickness Dependence of the Electrical Properties of Sol-Gel Derived Lead Zirconate Titanate Thin Films with (111) and (100) Texture

1997 ◽  
Vol 493 ◽  
Author(s):  
F. Chu ◽  
F. Xu ◽  
J. Shepard ◽  
S. Trolier-McKinstry
Keyword(s):  
Dielectric Constant ◽  
Lead Zirconate Titanate ◽  
Remanent Polarization ◽  
Critical Thickness ◽  
Piezoelectric Properties ◽  
Sol Gel ◽  
Precursor Solution ◽  
Lead Zirconate ◽  
Thickness Dependence ◽  
Pzt Films

ABSTRACTCrack-free (111) and (100)-textured Pb(Zr0.52Ti0.48)O3 films with thicknesses ranging from 0.25 to 2.5 μm were prepared using a methoxyethanol-based precursor solution, multiple spin-coating and multiple crystallization steps. The thickness dependence of the dielectric, ferroelectric and piezoelectric properties were investigated on both (111) and (100) oriented PZT films. In both cases, the degree of preferred orientation did not change with thickness. It is found that the dielectric constant, remanent polarization and piezoelectric coefficients (d33 and d31) increase with increasing film thickness. The (100)-textured film showed higher dielectric constant but lower remanent polarization relative to (111) textured film. 1 μm was identified to be a critical thickness that marks the change of dielectric, ferroelectric and piezoelectric behaviors as a function of thickness.

EFFECT OF PRE-HEATING TEMPERATURE ON THE CHARACTERISTICS OF PZT THIN FILMS GROWN BY USING A TRIOL SOL–GEL ROUTE

2007 ◽  
Vol 14 (02) ◽  
pp. 229-234
Author(s):  
SARAWUT THOUNTOM ◽  
MANOCH NAKSATA ◽  
KENNETH MACKENZIE ◽  
TAWEE TUNKASIRI
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Heating Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Pzt Thin Films ◽  
Pzt Films ◽  
Ferroelectric Hysteresis

Lead zirconate titanate (PZT) films with compositions near the morphotropic phase boundary were fabricated on Pt (111)/ Ti / SiO 2/ Si (100) using the triol sol–gel method. The effect of the pre-heating temperature on the phase transformations, microstructures, electrical properties, and ferroelectric properties of the PZT thin films was investigated. Randomly oriented PZT thin films pre-heated at 400°C for 10 min and annealed at 600°C for 30 min showed well-defined ferroelectric hysteresis loops with a remnant polarization of 26.57 μC/cm2 and a coercive field of 115.42 kV/cm. The dielectric constant and dielectric loss of the PZT films were 621 and 0.0395, respectively. The microstructures of the thin films are dense, crack-free, and homogeneous with fine grains about 15–20 nm in size.

Antiferroelectric Thin Films for Decoupling Capacitor and Microactuator Applications

1997 ◽  
Vol 493 ◽  
Author(s):  
Baomin Xu ◽  
Neelesh G. Pai ◽  
Paul Moses ◽  
L. Eric Cross
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Strain Level ◽  
Decoupling Capacitor ◽  
Niobium Doped ◽  
Maximum Current

ABSTRACTLanthanum-doped or niobium-doped lead zirconate titanate stannate antiferroelectric thin films with the thickness of about 0.4 μm have been prepared from acetic acid-based or 2-methoxyethanol-based sol-gel method. All the films have the maximum polarization larger than 30 μC/cm2 and show zero remanent polarization. By choosing appropriate compositions, we can make the films have “square” hysteresis loops with very sharp phase transition or “slanted” hysteresis loops with very small hysteresis. The properties that are important for decoupling capacitor and microactuator applications are characterized. For decoupling capacitor applications, films having square hysteresis loops with energy storage density of up to 7 J/cm3 can be made, which release more than half of their stored charge in 10 ns with a maximum current density of more than 9400 A/cm2. For microactuator applications, the films can either have a strain level of 0.32% with very small hysteresis or have a strain level of 0.42% with moderate hysteresis.

EFFECT OF PRE-HEATING TEMPERATURE ON THE CHARACTERISTICS OF SOL–GEL DERIVED LEAD ZIRCONATE TITANATE FILMS

2008 ◽  
Vol 15 (01n02) ◽  
pp. 65-70
Author(s):  
SARAWUT THOUMTOM ◽  
GOBWUTE RUJIJANAGUL ◽  
JERAPONG TONTRAKOON ◽  
TAWEE TUNKASIRI
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Lead Zirconate Titanate ◽  
Prefer Orientation ◽  
Annealing Temperature ◽  
Heating Temperature ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Zirconate Titanate ◽  
Preheating Temperature

Effect of pre-heating temperature on the properties of Lead zirconate titanate (PZT) powders and films was investigated. PZT powders and films were prepared via a triol-based sol–gel route. The PZT powders prepared at various heating temperatures were characterized. The preheating temperature range of 200°C–400°C and annealing temperature of 600°C were chosen to make the films. AFM micrograph revealed the thin films with homogeneous, dense, and crack-free properties. The pre-heating temperature was found to have a significant effect on phase formation, prefer orientation, and dielectric properties of the films. Higher dielectric constant and dielectric loss were observed at higher pre-heating temperature. However, all films showed the dielectric loss less than 0.04.

EFFECT OF EUROPIUM DOPING ON ELECTRICAL PROPERTIES OF PZT FILMS

2008 ◽  
Vol 15 (01n02) ◽  
pp. 1-5 ◽  
Author(s):  
CHUNYU SHAO ◽  
JING WANG ◽  
WEIJIE DONG ◽  
YAN CUI ◽  
MIN JI
Keyword(s):  
Leakage Current ◽  
Lead Zirconate Titanate ◽  
Doping Concentration ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Europium Doping ◽  
Pzt Film ◽  
Pzt Films ◽  
The Eu

Samples of lead zirconate titanate Pb ( Zr 0.53 Ti 0.47) O 3 with europium ( Eu ) doping concentration of 0, 0.5, 1.5, 3 mol% (PEZT) were fabricated by sol–gel method. XRD spectra showed that the introduction of Eu into PZT favored the growth of (100) orientation. With 3% Eu content, the preferential orientation of the film converted from (111) to (100) orientation. The Eu -doped PZT films exhibited lower leakage current less than 10-9 A/cm2 and the behavior of leakage current was discussed in terms of defect chemistry theorem. When Eu content was 1.5%, the remanent polarization (P r ) increased to 28 μ C/cm2 which was much higher than that of undoped PZT film.

scholarly journals Hafnium Zirconium Oxide Thin Films for CMOS Compatible Pyroelectric Infrared Sensors

2021 ◽  
Vol 6 (1) ◽  
pp. 27
Author(s):  
Clemens Mart ◽  
Malte Czernohorsky ◽  
Kati Kühnel ◽  
Wenke Weinreich
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Cost Effective ◽  
Atomic Layer ◽  
Lead Zirconate ◽  
Temperature Oscillation ◽  
Current Profile ◽  
Infrared Sensors ◽  
Integrated Sensor ◽  
Ferroelectric Hysteresis

Pyroelectric infrared sensors are often based on lead-containing materials, which are harmful to the environment and subject to governmental restrictions. Ferroelectric Hf1−xZrxO2 thin films offer an environmentally friendly alternative. Additionally, CMOS integration allows for integrated sensor circuits, enabling scalable and cost-effective applications. In this work, we demonstrate the deposition of pyroelectric thin films on area-enhanced structured substrates via thermal atomic layer deposition. Scanning electron microscopy indicates a conformal deposition of the pyroelectric film in the holes with a diameter of 500 nm and a depth of 8 μm. By using TiN electrodes and photolithography, capacitor structures are formed, which are contacted via the electrically conductive substrate. Ferroelectric hysteresis measurements indicate a sizable remanent polarization of up to 331 μC cm−2, which corresponds to an area increase of up to 15 by the nanostructured substrate. For pyroelectric analysis, a sinusoidal temperature oscillation is applied to the sample. Simultaneously, the pyroelectric current is monitored. By assessing the phase of the measured current profile, the pyroelectric origin of the signal is confirmed. The devices show sizable pyroelectric coefficients of −475 μC m−2 K−1, which is larger than that of lead zirconate titanate (PZT). Based on the experimental evidence, we propose Hf1−xZrxO2 as a promising material for future pyroelectric applications.

Sol-Gel Derived PZT Thick Films with Nano-Sized Microstructure

2002 ◽  
Vol 748 ◽  
Author(s):  
C. L. Zhao ◽  
Z. H. Wang ◽  
W. Zhu ◽  
O. K. Tan ◽  
H. H. Hng
Keyword(s):  
Lead Zirconate Titanate ◽  
Electromechanical Coupling ◽  
Thick Films ◽  
Sol Gel ◽  
Essential Element ◽  
Processing Parameters ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
Coupling Coefficients ◽  
Pzt Films

ABSTRACTLead zirconate titanate (PZT) films are promising for acoustic micro-devices applications because of their extremely high electromechanical coupling coefficients and excellent piezoelectric response. Thicker PZT films are crucial for these acoustic applications. A hybrid sol-gel technology has been developed as a new approach to realize simple and cost-effective fabrication of high quality PZT thick films. In this paper, PZT53/47 thick films with a thickness of 5–50 μm are successfully deposited on Pt-coated silicon wafer by using the hybrid sol-gel technology. The obtained PZT thick films are dense, crack-free, and have a nano-sized microstructure. The processing parameters of this technology have been evaluated. The microstructure of the film has been observed using field-emission scanning electron microscopy and the crystallization process has been monitored by the X-ray diffraction. The thick films thus made are good candidates for fabrication of piezoelectric diaphragm which will be an essential element of microspeaker and microphone arrays.

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