Ferroelectric Switching in Lead Zirconatelead Zinc Niobate Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
K. R. Udayakumar ◽  
P. J. Schuele ◽  
J. Chen ◽  
K. G. Brooks ◽  
L. E. Cross

AbstractThin films of PbZrO3-Pb(Zn0.33Nb0.67)03, with PZN contents of 8- 12%, were fabricated through the sol-gel spin-on technique. The structural, low frequency capacitive, and polarization reversal characteristics were investigated as a function of composition in this solid solution system. The switching of ferroelectric polarization was tested by a sequence of square wave pulses consisting of two positive pulses followed by two negative pulses. Compositions with higher PZN contents are promising for switching applications; the films were typically characterized by a switched charge of 4-14 μC/cm2, coercive field of around 30 kV/cm, and relative permittivity of 400-800.

1995 ◽  
Vol 67 (23) ◽  
pp. 3411-3413 ◽  
Author(s):  
H. D. Chen ◽  
K. R. Udayakumar ◽  
C. J. Gaskey ◽  
L. E. Cross

1982 ◽  
Vol 17 (10) ◽  
pp. 1233-1239 ◽  
Author(s):  
H. Berger ◽  
B. Christ ◽  
J. Troschke

2008 ◽  
Vol 47 (9) ◽  
pp. 7678-7684 ◽  
Author(s):  
Satoshi Wada ◽  
Momoyo Nitta ◽  
Nobuhiro Kumada ◽  
Daisuke Tanaka ◽  
Masahito Furukawa ◽  
...  

2008 ◽  
Vol 26 (2) ◽  
pp. 233-236
Author(s):  
Migaku Kobayashi ◽  
Hidenori Tamura ◽  
Hiromi Nakano ◽  
Hirohisa Satoh ◽  
Naoki Kamegashira

2019 ◽  
Vol 54 (16) ◽  
pp. 10984-10997 ◽  
Author(s):  
I. P. Raevski ◽  
V. V. Titov ◽  
Haydn Chen ◽  
I. N. Zakharchenko ◽  
S. I. Raevskaya ◽  
...  

2014 ◽  
Vol 703 ◽  
pp. 51-55
Author(s):  
Jia Zeng ◽  
Ming Hua Tang ◽  
Zhen Hua Tang ◽  
Yong Guang Xiao ◽  
Long Peng ◽  
...  

Bi0.94Ce0.06Fe0.97Ti0.03O3 and Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films were fabricated via sol-gel process on Pt/Ti/SiO2/Si substrates. The influence of Bi3.15Nd0.85Ti3O12 buffer layer on microstructure and electrical properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films were investigated in detail. Well-saturated P-E hysteresis loops can be obtained in Bi0.94Ce0.06Fe0.97Ti0.03O3 films with Bi3.15Nd0.85Ti3O12 buffer. The remnant polarization (2Pr) of the double-layered thin films is 112 μC/cm2. The coercive field (2Ec) of double-layered films is 672 kV/cm, which is much lower than that of the Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films. The leakage current density of Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films is 4.12×10-5 A/cm2.


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