Effects of Contact Materials on the Thermally Stimulated Current Spectra of Mercuric Iodide

1992 ◽  
Vol 242 ◽  
Author(s):  
X. J. Bao ◽  
T. E. Schlesinger ◽  
R. B. James ◽  
A. Y. Cheng ◽  
C. Ortale ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Mercuric Iodide ◽  
Thermally Stimulated Current ◽  
Contact Materials ◽  
Energy Capture ◽  
Thermally Stimulated Current Spectroscopy ◽  
Carrier Traps ◽  
Carrier Trap ◽  
Nuclear Detectors ◽  
Trap Activation

ABSTRACTMercuric iodide (HgI2) single crystals deposited with transparent indium-tin-oxide (ITO), and semitransparent gold and nickel contacts were investigated by thermally stimulated current spectroscopy (TSC). The differences in the TSC spectra from these samples indicate that the defect structure in HgI2 may be modified by the contact material. These defects act as carrier traps and have strong implications in the application of HgI2 nuclear detectors. A method of numerical analysis was developed to extract information such as carrier trap activation energy, capture cross-section, and trap concentration-lifetime product from the TSC measurements.

Photoluminescence Studies of Impurities and Defects in Mercuric Iodide

1989 ◽  
Vol 163 ◽  
Author(s):  
X.J. Bao ◽  
T.E. Schlesinger ◽  
R.B. James ◽  
A.Y. Cheng ◽  
C. Ortale
Keyword(s):  
Chemical Etching ◽  
Front Surface ◽  
Photoluminescence Spectra ◽  
Mercuric Iodide ◽  
Contact Materials ◽  
Bulk Heating ◽  
Photoluminescence Studies ◽  
Nuclear Detectors ◽  
Processing Steps ◽  
Impurities And Defects

AbstractWe have studied the effects of chemical etching in potassium iodide(KI) aqueous solution, vacuum exposure and bulk heating on the photoluminescence(PL) spectra of mercuric i0dide(HgI2). Different contact materials deposited onto HgI2 were also investigated, such as Pd, Cu, Al, Ni, Sn, In, Ag and Ta. These processing steps and the choice of a suitable electrode material are very important in the manufacturing of high-quality mercuric iodide nuclear detectors. Comparisons are made between the front surface photoluminescence and transmission photoluminescence spectra.

Deep Traps in High-Purity Semi-Insulating 6H-SiC Substrates: Thermally Stimulated Current Spectroscopy

2006 ◽  
Vol 527-529 ◽  
pp. 509-512 ◽  
Author(s):  
Z.Q. Fang ◽  
B. Claflin ◽  
David C. Look ◽  
L. Polenta ◽  
J. Chen ◽  
...  
Keyword(s):  
High Purity ◽  
Activation Energies ◽  
Applied Bias ◽  
Thermally Stimulated Current ◽  
Temperature Range ◽  
Deep Traps ◽  
Thermally Stimulated Current Spectroscopy ◽  
Trap Activation

Thermally stimulated current spectroscopy (TSC) has been applied to characterize deep traps in high-purity semi-insulating 6H-SiC substrates. By using above bandgap to sub-bandgap light for illumination at 83 K and different applied biases, at least nine TSC traps in the temperature range of 80 to 400 K can be consistently observed. It is found that TSC peaks for T < 130 K are significantly affected by light and some peaks are strongly enhanced by the applied bias. Measured trap activation energies range from 0.15 eV to 0.76 eV. Theoretical fittings of selected traps give more accurate trap parameters. Based on literature results connected with deep traps in conductive 6H-SiC, the origin of these TSC traps is discussed.

Investigation of Deep Level Defects in Mercuric Iodide by Thermally Stimulated Current Spectroscopy

1990 ◽  
Vol 209 ◽  
Author(s):  
X.J. Bao ◽  
T.E. Schlesinger ◽  
R.B. James ◽  
A.Y. Cheng ◽  
C. Olrtale ◽  
...  
Keyword(s):  
Single Crystals ◽  
Deep Level ◽  
Metal Contacts ◽  
Mercuric Iodide ◽  
Heating Rates ◽  
Thermally Stimulated Current ◽  
Depolarization Current ◽  
Pyroelectric Effect ◽  
Thermally Stimulated Current Spectroscopy ◽  
Defect Levels

ABSTRACTMercuric iodide (HgI2) single crystals deposited with semitransparent Pd, Al and Ag contacts were studied by thermally stimulated current spectroscopy (TSC). Distinct differences were found among spectra obtained friom samples withdifferentmetal contacts, indicating that interactions between the metal contacts and mercuric iodide substrates have strong effects on the deep defect levels in mercuric iodide. The activation energies of some of these defect levels were estimated bytaking TSC spectra with different heating rates. In addition, a pyroelectric effect was observed in Ag-contactedsamplesbythermally stimulated depolarization current technique (TSDC). The implications of these results in device applicationsof mercuric iodide are discussed.

scholarly journals Black Phosphorus-Molybdenum Disulfide Hetero-Junctions Formed with Ink-Jet Printing for Potential Solar Cell Applications with Indium-Tin-Oxide

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 560
Author(s):  
Ravindra Ketan Mehta ◽  
Anupama Bhat Kaul
Keyword(s):  
Electrical Properties ◽  
Molybdenum Disulfide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Cost Effective ◽  
Contact Materials ◽  
Ito Glass ◽  
The Future ◽  
Potential Applications ◽  
Jet Printing

In this work, we implemented liquid exfoliation to inkjet-print two-dimensional (2D) black phosphorous (BP) and molybdenum disulfide (MoS2) p–n heterojunctions on a standard indium tin oxide (ITO) glass substrate in a vertical architecture. We also compared the optical and electrical properties of the inkjet-printed BP layer with that of the MoS2 and the electrical properties of the mechanically exfoliated MoS2 with that of the inkjet-printed MoS2. We found significant differences in the optical characteristics of the inkjet-printed BP and MoS2 layers attributed to the differences in their underlying crystal structure. The newly demonstrated liquid exfoliated and inkjet-printed BP–MoS2 2D p–n junction was also compared with previous reports where mechanically exfoliated BP–MoS2 2D p–n junction were used. The electronic transport properties of mechanically exfoliated MoS2 membranes are typically better compared to inkjet-printed structures but inkjet printing offers a cost-effective and quicker way to fabricate heterostructures easily. In the future, the performance of inkjet-printed structures can be further improved by employing suitable contact materials, amongst other factors such as modifying the solvent chemistries. The architecture reported in this work has potential applications towards building solar cells with solution processed 2D materials in the future.

Evaluation of Electrical Contact Material Stability on Mercuric Iodide

1993 ◽  
Vol 302 ◽  
Author(s):  
A. Y. Cheng
Keyword(s):  
Free Energy ◽  
Room Temperature ◽  
Electrical Contact ◽  
Radiation Detection ◽  
Electrical Contacts ◽  
Contact Material ◽  
Mercuric Iodide ◽  
Energy Data ◽  
Contact Materials ◽  
Temperature Radiation

ABSTRACTMercuric iodide detectors are leading candidates for room-temperature radiation detection applications. The inherently reactive nature of mercuric iodide limits the number of materials suitable for fabrication of electrical contacts. The theoretical stabilities of elemental contact materials on mercuric iodide were evaluated at 25°C. Additionally, the stabilities of transparent conductive compounds, for photodetector applications, were studied. Calculations were based on Gibbs free energy data, estimates and a series of hypothesized reactions with mercuric iodide. Leading candidate materials were identified and compared to experimental results.

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