Doped Amorphous and Microcrystalline Silicon Carbide as Wide Band-Gap Material

1992 ◽  
Vol 242 ◽  
Author(s):  
F. Demichelis ◽  
C.F. Pirri ◽  
E. Tresso ◽  
P. Rava
Keyword(s):  
Silicon Carbide ◽  
Band Gap ◽  
Energy Gap ◽  
Wide Band ◽  
Microcrystalline Silicon ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
Sic Films

Amorphous and microcrystalline silicon carbide, undoped and doped, are promising materials as wide band gap semiconductors (Eg > 2 eV). In the present work results on nydrogenated and fluorinated a-SiC and uc-SiC films intrinsic, B or P doped are reported. Energy gap higher than 2 eV are obtained together with electrical dark conductivities in the range 10-12 -10-2 Ω-1cm-1

Wetting behavior of water on silicon carbide polar surfaces

2016 ◽  
Vol 18 (40) ◽  
pp. 28033-28039 ◽  
Author(s):  
W. W. Zhong ◽  
Y. F. Huang ◽  
D. Gan ◽  
J. Y. Xu ◽  
H. Li ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Wetting Behavior ◽  
Polar Surfaces ◽  
Wide Band Gap Semiconductors

Technically important wide band-gap semiconductors such as GaN, AlN, ZnO and SiC are crystallized in polar structures.

A pathway to p-type wide-band-gap semiconductors

2009 ◽  
Vol 95 (17) ◽  
pp. 172109 ◽  
Author(s):  
Anderson Janotti ◽  
Eric Snow ◽  
Chris G. Van de Walle
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
P Type

scholarly journals Solid solubility of rare earth elements (Nd, Eu, Tb) in In2−xSnxO3 – effect on electrical conductivity and optical properties

2014 ◽  
Vol 43 (25) ◽  
pp. 9620-9632 ◽  
Author(s):  
T. O. L. Sunde ◽  
M. Lindgren ◽  
T. O. Mason ◽  
M.-A. Einarsrud ◽  
T. Grande
Keyword(s):  
Electrical Conductivity ◽  
Optical Properties ◽  
Rare Earth ◽  
Rare Earth Elements ◽  
Band Gap ◽  
Solid Solubility ◽  
Wide Band ◽  
Wide Band Gap ◽  
Recent Interest ◽  
Wide Band Gap Semiconductors

Wide band-gap semiconductors doped with luminescent rare earth elements (REEs) have attracted recent interest due to their unique optical properties.

High Temperature Silicon Carbide CMOS Integrated Circuits

2011 ◽  
Vol 679-680 ◽  
pp. 726-729 ◽  
Author(s):  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
Dave A. Smith ◽  
Robin. F. Thompson ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Band Gap ◽  
High Temperatures ◽  
Wide Band ◽  
Cmos Technology ◽  
Cmos Integrated Circuits ◽  
Wide Band Gap ◽  
Circuit Performance

The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.

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