Radiation Testing of AlInAs/lnGaAs and GaAs/AlGaAs HBTs

1991 ◽  
Vol 240 ◽  
Author(s):  
S. B. Witmer ◽  
S. Mittleman ◽  
D. Lehy ◽  
F. Ren ◽  
T. R. Fullowan ◽  
...  
Keyword(s):  
Dose Rate ◽  
Radiation Effects ◽  
State Of The Art ◽  
Radiation Hardness ◽  
Current Gain ◽  
Transient Responses ◽  
Contact Metallization ◽  
Radiation Testing ◽  
Γ Ray ◽  
Small Change

ABSTRACTThe radiation hardness of small geometry (∼2 × 4 μm2), state of the art AlInAs/lnGaAs and GaAs/AlGaAs HBTs to 60Co γ-ray has been investigated up to a dose of 100 MRad. The former devices showed a small change in Ic and gain for 20 MRad, with essentially no change in IB. At 40 MRad, the gain of the devices had decreased to unity. By contrast, for GaAs/AlGaAs HBTs, the current gain actually increased up to a dose of 75 MRad. At 100 MRad, none of our devices were still operational. This was ascribed to degradation of the base-collector contact metallization (TiPtAu) and in particular to the presence of Au. Carbon-and beryllium-doped base devices showed the same response to 60Co γ-ray doses. No long transient responses in either base or collector currents were observed during irradiation of the GaAs/AlGaAs devices with 120 nsec pulses of 10 MeV electrons at rates up to 2.7 × 1010 Rad · sec−1. Results of a 2-dimensional modelling study suggest that both GaAs and InP based HBTs are relatively immune to damage by transient radiation effects up to a dose rate of 1011 Rad · sec−1, with GaAs based devices being more resistant to radiation than InP due to their shorter recombination times.

Analog Computer Techniques for the Prediction of Transient Nuclear Radiation Effects On Transistor Circuits

SIMULATION ◽  
1964 ◽  
Vol 2 (2) ◽  
pp. R-25-R-34
Author(s):  
Lembit Kosenkranius
Keyword(s):  
Negative Feedback ◽  
Radiation Effects ◽  
Transfer Functions ◽  
Analog Computer ◽  
Nuclear Radiation ◽  
Current Gain ◽  
Transient Responses ◽  
Linear Networks ◽  
Transistor Circuits ◽  
Computer Representation

Analog-computer representation of transistor circuits was developed for predicting transient responses of these circuits during nuclear radiation bursts. Tran sistors were simulated from the measured or man ufacturer-specified characteristic curves. Radiation effects in the transistors were added in the form of transient increase in emitter-to-base potential, and by the reduction of current gain (beta) of the tran sistor with a radiation-controlled negative feedback.* Linear networks between transistors were simulated from the transfer functions of these networks. A com parison is made between the responses of real and simulated single stage common emitter amplifiers and the real and simulated radiation bursts, respec tively.

Ionizing Radiation Testing System for Emerging Semiconductor Materials and Devices

2011 ◽  
Vol 120 ◽  
pp. 495-498
Author(s):  
Xin Li Hu ◽  
Jing Kang Gui ◽  
Ce Zhou Zhao
Keyword(s):  
Ionizing Radiation ◽  
Radiation Effects ◽  
Semiconductor Materials ◽  
Testing System ◽  
X Ray ◽  
Design And Implementation ◽  
Radiation Testing ◽  
Lead Shielding ◽  
Γ Ray ◽  
Implementation Method

A technical design and implementation method of a ionizing radiation testing system, which is especially applicable to conduct experiments of studying X-ray and γ-ray radiation effects in emerging semiconductor materials and devices, has been demonstrated by connecting components of a PC, a KEITHLEY 487, a HP 8110A, an Agilent 4284A, and a probe station together. The lead thickness of the lead shielding cylinder container is obtained numerically at least 2.1cm for safely holding a 1 GBq Cs137 γ-ray source.

Using a Temperature-Switching Approach to Evaluate Low-Dose-Rate Ionizing Radiation Effects on SET in Linear Bipolar Circuits

2019 ◽  
Vol 66 (7) ◽  
pp. 1557-1565 ◽  
Author(s):  
Shuai Yao ◽  
Wu Lu ◽  
Xin Yu ◽  
Qi Guo ◽  
Chengfa He ◽  
...  
Keyword(s):  
Ionizing Radiation ◽  
Dose Rate ◽  
Radiation Effects ◽  
Low Dose ◽  
Low Dose Rate

Joint model of dose rate radiation effects in bipolar devices

2017 ◽  
Author(s):  
V. Pershenkov ◽  
A. Bakerenkov ◽  
V. Telets ◽  
V. Belyakov ◽  
V. Shurenkov ◽  
...  
Keyword(s):  
Dose Rate ◽  
Radiation Effects ◽  
Joint Model ◽  
Bipolar Devices

scholarly journals Power lateral pnp transistor operating with high current density in irradiated voltage regulator

2013 ◽  
Vol 28 (2) ◽  
pp. 146-157 ◽  
Author(s):  
Vladimir Vukic ◽  
Predrag Osmokrovic
Keyword(s):  
Current Density ◽  
High Current Density ◽  
Positive Influence ◽  
Radiation Hardness ◽  
Current Gain ◽  
Voltage Regulator ◽  
Interface Traps ◽  
High Current ◽  
Oxide Trapped Charge ◽  
Trapped Charge

The operation of power lateral pnp transistors in gamma radiation field was examined by detection of the minimum dropout voltage on heavily loaded low-dropout voltage regulators LM2940CT5, clearly demonstrating their low radiation hardness, with unacceptably low values of output voltage and collector-emitter voltage volatility. In conjunction with previous results on base current and forward emitter current gain of serial transistors, it was possible to determine the positive influence of high load current on a slight improvement of voltage regulator LM2940CT5 radiation hardness. The high-current flow through the wide emitter aluminum contact of the serial transistor above the isolation oxide caused intensive annealing of the positive oxide-trapped charge, leading to decrease of the lateral pnp transistor's current gain, but also a more intensive recovery of the small-signal npn transistors in the control circuit. The high current density in the base area of the lateral pnp transistor immediately below the isolation oxide decreased the concentration of negative interface traps. Consequently, the positive influence of the reduced concentration of the oxide-trapped charge on the negative feedback reaction circuit, together with the favourable effect of reduced interface traps concentration, exceeded negative influence of the annealed oxide-trapped charge on the serial pnp transistor's forward emitter current gain.

scholarly journals Minimum dropout voltage on a serial pnp transistor of a moderately loaded voltage regulator in a gamma radiation field

2012 ◽  
Vol 27 (4) ◽  
pp. 333-340 ◽  
Author(s):  
Vladimir Vukic
Keyword(s):  
Integrated Circuit ◽  
High Current Density ◽  
Negative Influence ◽  
Radiation Hardness ◽  
Voltage Regulators ◽  
Current Gain ◽  
Voltage Regulator ◽  
Emitter Current ◽  
Moderate Load ◽  
Loaded Voltage

The main examined value in an experiment performed on moderately loaded voltage regulators was the serial pnp transistor?s minimum dropout voltage, followed by the data on the base current and forward emitter current gain. Minimum dropout voltage decreased by up to 12%, while the measured values of the forward emitter current gain decreased by 20-40% after the absorption of a total ionizing dose of 500 Gy. The oxide trapped charge increased the radiation tolerance of the serial lateral pnp transistor owing to the suppression of interface trap formation above the base area. Current flow through the serial transistor of the voltage regulator had an influence on the decrease in the power pnp transistor?s forward emitter current gain. Due to the operation with a moderate load of 100 mA, loss of emitter injection efficiency was not as important as during the operation with high current density, thus eliminating the negative influence of emitter crowding on the radiation hardness of the voltage regulator. For a moderate load, gain in the negative feedback reaction was enough to keep output voltage in the anticipated range. Only information procured from tests of the minimum dropout voltage on the moderately loaded voltage regulators were not sufficient for unequivocal determination of the examined integrated circuit?s radiation hardness.

Radiation Hardness of Nd:GdVO4 Laser Crystal under γ-Ray Irradiation

2019 ◽  
Vol 27 (4) ◽  
pp. 271-274
Author(s):  
M. Kh. Ashurov ◽  
Yu. D. Zavartsev ◽  
A. I. Zagumennyi ◽  
Sh. Kh. Ismoilov ◽  
Yu. L. Kalachev ◽  
...  
Keyword(s):  
Laser Crystal ◽  
Radiation Hardness ◽  
Γ Ray

scholarly journals Nanodiamonds as a state-of-the-art material for enhancing the gamma radiation resistance properties of polymeric membranes

2020 ◽  
Vol 2 (3) ◽  
pp. 1214-1227 ◽  
Author(s):  
Amita Bedar ◽  
Nitesh Goswami ◽  
Amit K. Singha ◽  
Virendra Kumar ◽  
Anil K. Debnath ◽  
...  
Keyword(s):  
Gamma Radiation ◽  
Radiation Resistance ◽  
Radiation Effects ◽  
State Of The Art ◽  
Polymeric Membranes ◽  
Polysulfone Membranes

Radiation effects on polysulfone membranes without and with incorporating nanodiamonds into the polysulfone matrix.

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