Physical Structure and the Electrochromic effect in Tungsten Oxide Films

1983 ◽  
Vol 24 ◽  
Author(s):  
A. P. Giri ◽  
R. Messier

ABSTRACTIn all previous studies of tungsten oxide films it has been implicitly assumed that the film is uniform except for grain boundaries in polycrystalline films. In this study we show that amorphous tungsten oxide thin films contain highly anisotropic void networks which not only dominate their physical structure but also control their electrochromic behaviour. The void network structure is controlled primarily through ion bombardment of the growing film during deposition while the film stoichiometry HyWO3−x is controlled by the reactive sputtering processes of tungsten in Ar/O2/H2 atmospheres. The evolutionary growth model of physical structure was studied in detail by both transmission and scanning electron microscopy. On the basis of physical structure-property correlations we are able to consistently explain the basic electrochromic characteristics and chemical stability of the films. Such information leads to better understanding of the problems and limitations inherent in thin film electrochromic devices.

2015 ◽  
Vol 3 (13) ◽  
pp. 3114-3120 ◽  
Author(s):  
Richard P. Oleksak ◽  
William F. Stickle ◽  
Gregory S. Herman

Gallium tungsten oxide thin films formed from a single aqueous precursor. The highly controllable metal content allowed for fine-tuning of film dielectric and optical properties.


2020 ◽  
Vol 44 (11-12) ◽  
pp. 744-749
Author(s):  
Siamak Ziakhodadadian ◽  
Tianhui Ren

In this work, tungsten oxide thin films are deposited on silicon substrates using the hot filament chemical vapor deposition system. The influence of substrate temperature on the structural, morphological, and elemental composition of the tungsten oxide thin films is investigated using X-ray diffraction, field-emission scanning electron microscopy, and X-ray photoelectron spectroscopy techniques. Also, the mechanical and tribological properties of these thin films are considered using nanoindentation and scratch tests. Based on X-ray diffraction results, it can be concluded that tungsten oxide thin films are synthesized with a cubic WO3 structure. From field-emission scanning electron microscopy images, it can be seen that tungsten oxide thin films are made of crystal clusters which have grown vertically on the substrate surface. In addition, the results exhibit two asymmetric W4d5/2 and W4d7/2 peaks which can be assigned to W5+ and W4+ species, respectively. The mechanical results show that the hardness and the elastic modulus increase on raising the substrate temperature up to 600 °C. From the tribological performances, the friction coefficient of the tungsten oxide thin film decreases on increasing the substrate temperature.


2010 ◽  
Author(s):  
Subramanian Balaji ◽  
Yahia Djaoued ◽  
Ralf Brüning ◽  
André-Sébastien Albert ◽  
Richard Z. Ferguson ◽  
...  

Author(s):  
J. L. Lee ◽  
C. A. Weiss ◽  
R. A. Buhrman ◽  
J. Silcox

BaF2 thin films are being investigated as candidates for use in YBa2Cu3O7-x (YBCO) / BaF2 thin film multilayer systems, given the favorable dielectric properties of BaF2. In this study, the microstructural and chemical compatibility of BaF2 thin films with YBCO thin films is examined using transmission electron microscopy and microanalysis. The specimen was prepared by using laser ablation to first deposit an approximately 2500 Å thick (0 0 1) YBCO thin film onto a (0 0 1) MgO substrate. An approximately 7500 Å thick (0 0 1) BaF2 thin film was subsequendy thermally evaporated onto the YBCO film.Images from a VG HB501A UHV scanning transmission electron microscope (STEM) operating at 100 kV show that the thickness of the BaF2 film is rather uniform, with the BaF2/YBCO interface being quite flat. Relatively few intrinsic defects, such as hillocks and depressions, were evident in the BaF2 film. Moreover, the hillocks and depressions appear to be faceted along {111} planes, suggesting that the surface is smooth and well-ordered on an atomic scale and that an island growth mechanism is involved in the evolution of the BaF2 film.


2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.


2021 ◽  
pp. 138659
Author(s):  
Q.A. Drmosh ◽  
N.A. Al-Muhaish ◽  
Yousif Ahmed Al Wajih ◽  
Mir Waqas Alam ◽  
Z.H. Yamani

1993 ◽  
Vol 311 ◽  
Author(s):  
W.W. Hsieh ◽  
J.J. Lin ◽  
M.M. Wang ◽  
L.L. Chen

ABSTRACTSimultaneous occurrence of multiphases was observed in the interfacial reactions of ultrahigh vacuum deposited Ti, Hf and Cr thin films on (111)Si by high resolution transmission electron microscopy in conjunction with fast Fourier transform diffraction analysis and image simulation. For the three systems, an amorphous interlayer as well as a number of crystalline phase were found to form simultaneously in the early stages of interfacial reactions. The formation of multiphases appeared to be quite general in the initial stages of interfacial reactions of UHV deposited refractory thin films. The results called for a reexamination of generally accepted “difference” in reaction sequence between bulk and thin film couples.


2022 ◽  
Vol 580 ◽  
pp. 121409
Author(s):  
Abuzar Khan ◽  
Nouf Al-Muhaish ◽  
A.K. Mohamedkhair ◽  
Mohd Yusuf Khan ◽  
Mohammad Qamar ◽  
...  

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