Electrochemical and Chemical Sulfidation of GaAs: A Surface Chemical Study

1991 ◽  
Vol 237 ◽  
Author(s):  
J. Yota ◽  
V. A. Burrows
Keyword(s):  
Infrared Spectroscopy ◽  
Electronic Properties ◽  
Chemical Nature ◽  
Surface Film ◽  
Chemical Study ◽  
Gaas Surface ◽  
Surface Chemical ◽  
Considerable Controversy ◽  
Oxygen Group ◽  
Sulfur Containing

ABSTRACTTreatment of gallium arsenide with sulfur-containing media has been shown to improve GaAs surface electronic properties. However, there is still considerable controversy regarding the chemical nature of the surface film which results from the sulfidation, and of the basis of the electronic improvement and of the decay in the improved electronic properties with time. We have investigated the surface chemistry of the chemical sulfidation treatment of GaAs with Na2S-9H2O and the electrochemical sulfidation treatment of GaAs with Na2S-9H2O-ethylene glycol. Using surface infrared spectroscopy (SIRS), we have studied the film formed on the surface after the treatments and its behavior with time. Results show that the film on the GaAs surface contains sulfur which is often associated with oxygen, that this film slowly reacts in air to form unexpected species, e.g. sodium carbonate and sulfur-oxygen group-containing compounds, and that sulfur and oxygen are non-uniformly distributed.

Sulfidation and Post-Sulfidatton Reactions on Gallium Arsenide

1992 ◽  
Vol 259 ◽  
Author(s):  
J. Yota ◽  
V. A. Burrows
Keyword(s):  
Thin Film ◽  
Electronic Properties ◽  
Photoelectron Spectroscopy ◽  
Surface Film ◽  
Gaas Surface ◽  
Reflection Spectroscopy ◽  
Infrared Reflection ◽  
Considerable Controversy ◽  
Infrared Reflection Spectroscopy ◽  
Sulfur Containing

ABSTRACTChemical treatment of GaAs with sulfur-containing compounds has been shown to improve GaAs surface electronic properties. There is still considerable controversy, however, regarding the chemical nature of the surface film which results from the sulfidation, and of the basis of the electronic improvement and of the decay in the improved electronic properties with time. We have investigated the surface chemistry of the chemical sulfidation treatment of GaAs with Na2S.9H2O and (NH4)2S. Using surface infrared reflection spectroscopy (SIRS) and x-ray photoelectron spectroscopy (XPS), we have studied the GaAs surface and its behavior with time after such treatments. Results show that both of these sulfidation treatments removed the chemical oxide of GaAs, leaving behind a thin film on the surface. XPS results show that the Ga-O and As-O peaks were removed after treatment and that As-S and no Ga-S peaks were formed. Infrared results show that the film deposited after Na2S.9H2O treatment slowly reacted in air to form sodium carbonate and rhombic sulfur. In addition, this film contains compounds with sulfur-oxygen bonds, which most likely were arsenic sulfate, sulfite, and thiosulfate salts. The film deposited on the (NH4)2Streated GaAs surface was identified as ammonium thiosulfate and slowly decomposed with time. Rinsing with water removed the thin film formed after either sulfidation treatment.

Electrochemical Sulfur Treatments of GaAs Using Na2S and (NH4)2S Solutions: A Surface Chemical Study

1992 ◽  
Vol 282 ◽  
Author(s):  
J. Yota ◽  
V. A. Burrows
Keyword(s):  
Electronic Properties ◽  
Photoelectron Spectroscopy ◽  
Surface Film ◽  
Surface Recombination ◽  
Chemical Study ◽  
Lower Surface ◽  
State Density ◽  
Gaas Surface ◽  
Surface Recombination Velocity ◽  
Recombination Velocity

ABSTRACTChemical sulfur treatments of GaAs have been shown to improve the GaAs surface electronic properties. These treatments result in lower surface state density, lower surface recombination velocity, and shifting or unpinning of the Fermi level, in addition to improvement in the performance of devices. However, there is still considerable controversy regarding the chemical nature of the surface film which results from this chemical sulfidation. It has been shown that this film is not stable chemically and electronically. The improved surface electronic properties decay with time and are sensitive to the chemical environment of the material. In this study, using surface infrared reflection spectroscopy (SIRS) and x-ray photoelectron spectroscopy (XPS), we have investigated the electrochemical sulfidation of GaAs as a possible new method to produce a GaAs surface that is stable chemically and electronically. We have found that anodic treatments with Na2S and (NH4S solutions result in the removal of the pre-existing oxide of GaAs and the formation of films comprising sulfur, sodium carbonate, ammonium thiosulfate, and sulfide and sulfur-oxygen compounds of arsenic. Rinsing the GaAs with water removes the bulk of the film, leaving behind a surface on which only arsenic sulfide was detected.

Robust and sulfur-containing ingredient surface film to improve the electrochemical performance of LiDFOB-based high-voltage electrolyte

2018 ◽  
Vol 260 ◽  
pp. 536-548 ◽  
Author(s):  
Dongni Zhao ◽  
Peng Wang ◽  
Xiaoling Cui ◽  
Liping Mao ◽  
Chunlei Li ◽  
...  
Keyword(s):  
Electrochemical Performance ◽  
High Voltage ◽  
Surface Film ◽  
Sulfur Containing

Electronic Properties of Neutral Dyes in the Channels of Zeolite L:  A Combined Spectroscopic and Quantum Chemical Study

2007 ◽  
Vol 111 (1) ◽  
pp. 8-15 ◽  
Author(s):  
Beate Bussemer ◽  
Dirk Munsel ◽  
Heike Wünscher ◽  
Gerhard J. Mohr ◽  
Ulrich-Walter Grummt
Keyword(s):  
Electronic Properties ◽  
Quantum Chemical ◽  
Quantum Chemical Study ◽  
Chemical Study ◽  
Zeolite L

Effect of Oxygen Plasma Treatment on the Porosity and Surface Chemical Nature of Glassy Carbons

1995 ◽  
Vol 176 (1) ◽  
pp. 128-137 ◽  
Author(s):  
M. DOMINGO-GARCIA ◽  
I. FERNÁNDEZ-MORALES ◽  
F.J. LÓPEZ-GARZÓN ◽  
C. MORENO-CASTILLA ◽  
M. PYDA
Keyword(s):  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Chemical Nature ◽  
Oxygen Plasma Treatment ◽  
Surface Chemical ◽  
Effect Of Oxygen

scholarly journals Surface-Chemical Study on Stress Corrosion of Glass in Aqueous Solutions (Part 1)

1989 ◽  
Vol 97 (1129) ◽  
pp. 911-915
Author(s):  
Shin-ichi TAKEDA ◽  
Shinji NAKADA ◽  
Isao TARI
Keyword(s):  
Aqueous Solutions ◽  
Stress Corrosion ◽  
Chemical Study ◽  
Surface Chemical

GaAs surface chemical passivation by (NH4)2S+Se and the effect of annealing treatments

1996 ◽  
Vol 39 (4) ◽  
pp. 507-510 ◽  
Author(s):  
S. Belkouch ◽  
C. Aktik ◽  
H. Xu ◽  
E.L. Ameziane
Keyword(s):  
Gaas Surface ◽  
Surface Chemical ◽  
Chemical Passivation

Chemical Models for the Mechanisms that Influence the Nature and Structure of the Interfacial Transition Zone

1994 ◽  
Vol 370 ◽  
Author(s):  
D. L. Cocke ◽  
M. Y. A. Mollah ◽  
T.-C. Lin ◽  
R. K. Vempati ◽  
T. R. Hess
Keyword(s):  
Transition Zone ◽  
Chemical Nature ◽  
Reaction Model ◽  
Interfacial Transition Zone ◽  
Hydrated Cement ◽  
Surface Chemical ◽  
Interfacial Chemistry ◽  
Compound Formation ◽  
Control Reaction ◽  
Chemical Models

AbstractThe chemical nature and microstructure of the interfacial transition zone (ITZ) are influenced by the interfacial mechanisms of hydration which are primarily controlled by surface and nearsurface phenomena. Recent works from our laboratory involving superplasticizers, metal anions that retard hydration and interaction with silicate based aggregates have established that the interfacial chemistry is of fundamental importance in understanding the mechanisms of CSH formation, surface chemical compound formation and mineralization of the interfacial transition zone and its interaction with the hydrated cement particles and the aggregate. A surface charge control reaction model that accounts for :he importance of calcium and other cations and anions will be outlined and used to discuss the interfacial physical chemistry of the ITZ and its ultimate chemical nature and structure.

Electronic properties of sulfur passivated undoped-n+ type GaAs surface studied by photoreflectance

2003 ◽  
Vol 218 (1-4) ◽  
pp. 211-215 ◽  
Author(s):  
Peng Jin ◽  
S.H. Pan ◽  
Y.G. Li ◽  
C.Z. Zhang ◽  
Z.G. Wang
Keyword(s):  
Electronic Properties ◽  
Gaas Surface
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