Avoiding Dislocation Formation for B, P, and As Implants in Silicon
ABSTRACTImplants of B, P, and As in Si lead to dislocation formation after 900°c annealing if a critical amount of implant damage is exceeded. However, it is possible to implant higher doses without forming dislocations if the dose is implanted in several sub-critical steps. Annealing between each step removes the (sub-critical) implant damage and dislocations do not form. Such avoidance of dislocation formation is demonstrated for 80 keV implants of B and MeV implants of B, P, and As.
1989 ◽
Vol 61
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pp. 463-467
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1980 ◽
Vol 43
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pp. 038-040
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1984 ◽
Vol 51
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pp. 236-239
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1979 ◽
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pp. 603-610
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1986 ◽
Vol 56
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