Correlation of Stress Relaxation and Microstructure Change in Polycrystalline Thin Films on Substrates: Au on Si at RT

1991 ◽  
Vol 230 ◽  
Author(s):  
A. C. Vermeulen ◽  
R. Delhez ◽  
E. J. Mittemeijer
Keyword(s):  
Stress Relaxation ◽  
Dislocation Density ◽  
Room Temperature ◽  
Dominant Role ◽  
Dislocation Motion ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thermally Activated ◽  
Polycrystalline Thin Films ◽  
Simultaneous Decrease

AbstractStress relaxation in polycrystalline layers can be explained by processes, in which the microstructure plays a dominant role. The microstructure itself may also be subjected to changes. With X-ray diffraction information about both the stress and the microstructure can be obtained without destroying the specimen and without disturbing the stress relaxation process.In this paper a model system is studied: Au on Si<100>. The specimens showed a simultaneous decrease of macrostress and dislocation density with time at room temperature. This could be interpreted on the basis of a model founded on thermally activated dislocation motion. It followed that the grain size is an important parameter for the change of the dislocation density.

Structure and Conductivity of Iodine-Doped C60 Thin Films

1994 ◽  
Vol 359 ◽  
Author(s):  
Jun Chen ◽  
Haiyan Zhang ◽  
Baoqiong Chen ◽  
Shaoqi Peng ◽  
Ning Ke ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Room Temperature ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
X Ray ◽  
Thermally Activated ◽  
Order Of Magnitude

ABSTRACTWe report here the results of our study on the properties of iodine-doped C60 thin films by IR and optical absorption, X-ray diffraction, and electrical conductivity measurements. The results show that there is no apparent structural change in the iodine-doped samples at room temperature in comparison with that of the undoped films. However, in the electrical conductivity measurements, an increase of more that one order of magnitude in the room temperature conductivity has been observed in the iodine-doped samples. In addition, while the conductivity of the undoped films shows thermally activated temperature dependence, the conductivity of the iodine-doped films was found to be constant over a fairly wide temperature range (from 20°C to 70°C) exhibiting a metallic feature.

scholarly journals Formation of nanocrystalline B2-structured (Fe,Ni)Al in mechanically alloyed Fe50Al30Ni20 (wt.%) powder

2018 ◽  
pp. 66
Author(s):  
Nakib Chafika
Keyword(s):  
Dislocation Density ◽  
Mechanical Alloying ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
Mechanically Alloyed ◽  
Sem Images ◽  
X Ray ◽  
Paramagnetic Behaviour ◽  
Powder Particles ◽  
Bcc Phase

B2-structured (Fe,Ni)Al was synthesised by an abrupt reaction during mechanical alloying (MA) of the elemental powders of Fe, Al and Ni. The structural, microstructural, morphological and magnetic changes occurring in the studied material during MA were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Two crystalline phases were found, a majority one corresponding to (Fe,Ni)Al bcc phase with a crystallite size less than 10 nm, a lattice strain up to 1.6% and a dislocation density of about 2.3 x1016 m-2. The other phase was in a low proportion corresponding to Fe (Al,Ni) solid solution. SEM images showed an irregular morphology of powder particles. Mossbauer spectra of the milled powders, recorded at room temperature, reveal the paramagnetic behaviour of the obtained powder. Keywords: Mechanical alloying, ternary composition, dislocation density, structural properties, paramagnetic behaviour.

The Effect of Ultra-Low Temperature Treatments on the Stress in Aluminum Metallization on Silicon Wafers

1994 ◽  
Vol 338 ◽  
Author(s):  
Frank Baldwin ◽  
Paul H. Holloway ◽  
Mark Bordelon ◽  
Thomas R. Watkins
Keyword(s):  
Stress Relaxation ◽  
Low Temperature ◽  
Thermal Cycling ◽  
Liquid Nitrogen ◽  
Room Temperature ◽  
Silicon Wafers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Aluminum Metallization ◽  
Low Temperature Treatments

ABSTRACTThe stresses in Al-0.75w%Si-0.5w%Cu unpatterned metallization on silicon wafers have been measured using substrate curvature and x-ray diffraction techniques after quenching in liquid nitrogen. Stresses were measured with and without phospho-silicate glass overlayers and SiO2 underlayers, and thermal cycling followed by relaxation at room temperature. It was found that cooling the substrates to 77 K and warming to room temperature caused the metallization stress to go from tensile to compressive. Subsequent heating of the substrates to above ∼70°C followed by cooling to room temperature caused the stress to become tensile. Both compressive and tensile stresses were found to relax at room temperature with a time constant of 2.3 ± 0.2 hours. The magnitude of stress relaxation was a function of temperature, being about 20 MPa after heating to 240°C. The metallization exhibited both compressive and tensile flow stresses of ∼100 MPa near room temperature.

Electron Microscopy of Human Gallstones

1971 ◽  
Vol 29 ◽  
pp. 296-297
Author(s):  
C. Wolpers ◽  
R. Blaschke
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Bile Pigment ◽  
X Ray Diffraction ◽  
Triclinic Crystal System ◽  
X Ray ◽  
Follow Up Study ◽  
Infra Red ◽  
Main Components

Scanning microscopy was used to study the surface of human gallstones and the surface of fractures. The specimens were obtained by operation, washed with water, dried at room temperature and shadowcasted with carbon and aluminum. Most of the specimens belong to patients from a series of X-ray follow-up study, examined during the last twenty years. So it was possible to evaluate approximately the age of these gallstones and to get information on the intensity of growing and solving.Cholesterol, a group of bile pigment substances and different salts of calcium, are the main components of human gallstones. By X-ray diffraction technique, infra-red spectroscopy and by chemical analysis it was demonstrated that all three components can be found in any gallstone. In the presence of water cholesterol crystallizes in pane-like plates of the triclinic crystal system.

Electron Microscope study of commensurate-incommensurate phase transition in BaZnGeO4

1990 ◽  
Vol 48 (4) ◽  
pp. 172-173
Author(s):  
Naoki Yamamoto ◽  
Makoto Kikuchi ◽  
Tooru Atake ◽  
Akihiro Hamano ◽  
Yasutoshi Saito
Keyword(s):  
Phase Transition ◽  
Electron Microscope Study ◽  
Room Temperature ◽  
Hexagonal Lattice ◽  
Ferroelectric Materials ◽  
Temperature Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Periodic Arrays ◽  
Modulation Wave Vector

BaZnGeO4 undergoes many phase transitions from I to V phase. The highest temperature phase I has a BaAl2O4 type structure with a hexagonal lattice. Recent X-ray diffraction study showed that the incommensurate (IC) lattice modulation appears along the c axis in the III and IV phases with a period of about 4c, and a commensurate (C) phase with a modulated period of 4c exists between the III and IV phases in the narrow temperature region (—58°C to —47°C on cooling), called the III' phase. The modulations in the IC phases are considered displacive type, but the detailed structures have not been studied. It is also not clear whether the modulation changes into periodic arrays of discommensurations (DC’s) near the III-III' and IV-V phase transition temperature as found in the ferroelectric materials such as Rb2ZnCl4.At room temperature (III phase) satellite reflections were seen around the fundamental reflections in a diffraction pattern (Fig.1) and they aligned along a certain direction deviated from the c* direction, which indicates that the modulation wave vector q tilts from the c* axis. The tilt angle is about 2 degree at room temperature and depends on temperature.

Xenon Trioxide Adducts of O-Donor Ligands; [(CH3)2CO]3XeO3, [(CH3)2SO]3(XeO3)2, (C5H5NO)3(XeO3)2, and [(C6H5)3PO]2XeO3

2018 ◽  
Author(s):  
Katherine Marczenko ◽  
James Goettel ◽  
Gary Schrobilgen
Keyword(s):  
Room Temperature ◽  
Triphenylphosphine Oxide ◽  
Donor Ligands ◽  
Mechanical Shock ◽  
X Ray Diffraction ◽  
X Ray ◽  
Oxygen Coordination ◽  
Xenon Trioxide ◽  
Distorted Octahedra ◽  
Coordination Spheres

Oxygen coordination to the Xe(VI) atom of XeO<sub>3</sub> was observed in its adducts with triphenylphosphine oxide, dimethylsulfoxide, pyridine-N-oxide, and acetone. The crystalline adducts were characterized by low-temperature, single-crystal X-ray diffraction and Raman spectroscopy. Unlike solid XeO<sub>3</sub>, which detonates when mechanically or thermally shocked, the solid [(C<sub>6</sub>H<sub>5</sub>)<sub>3</sub>PO]<sub>2</sub>XeO<sub>3</sub>, [(CH<sub>3</sub>)<sub>2</sub>SO]<sub>3</sub>(XeO<sub>3</sub>)<sub>2</sub>,<sub> </sub>and (C<sub>5</sub>H<sub>5</sub>NO)<sub>3</sub>(XeO<sub>3</sub>)<sub>2</sub> adducts are insensitive to mechanical shock, but undergo rapid deflagration when ignited by a flame. Both [(C<sub>6</sub>H<sub>5</sub>)<sub>3</sub>PO]<sub>2</sub>XeO<sub>3 </sub>and (C<sub>5</sub>H<sub>5</sub>NO)<sub>3</sub>(XeO<sub>3</sub>)<sub>2</sub> are air-stable whereas [(CH<sub>3</sub>)<sub>2</sub>SO]<sub>3</sub>(XeO<sub>3</sub>)<sub>2</sub> slowly decomposes over several days and [(CH<sub>3</sub>)<sub>2</sub>CO]<sub>3</sub>XeO<sub>3</sub> undergoes adduct dissociation at room temperature. The xenon coordination sphere of [(C<sub>6</sub>H<sub>5</sub>)<sub>3</sub>PO]<sub>2</sub>XeO<sub>3</sub> is a distorted square pyramid which provides the first example of a five-coordinate XeO<sub>3</sub> adduct. The xenon coordination spheres of the remaining adducts are distorted octahedra comprised of three Xe---O secondary contacts that are approximately trans to the primary Xe–O bonds of XeO<sub>3</sub>. Quantum-chemical calculations were used to assess the Xe---O adduct bonds, which are predominantly electrostatic σ-hole bonds between the nucleophilic oxygen atoms of the bases and the σ-holes of the xenon atoms.

Effect of trytophan as dopant on potassium acid phthalate single crystals

2019 ◽  
Author(s):  
Chem Int
Keyword(s):  
Single Crystals ◽  
Room Temperature ◽  
Visible Region ◽  
X Ray Diffraction ◽  
X Ray ◽  
Slow Evaporation Technique ◽  
Absorption Studies ◽  
Evaporation Technique ◽  
Potassium Acid Phthalate ◽  
Acid Phthalate

Optically transparent single crystals of potassium acid phthalate (KAP, 0.5 g) 0.05 g and 0.1 g (1 and 2 mol %) trytophan were grown in aqueous solution by slow evaporation technique at room temperature. Single crystal X- ray diffraction analysis confirmed the changes in the lattice parameters of the doped crystals. The presence of functional groups in the crystal lattice has been determined qualitatively by FTIR analysis. Optical absorption studies revealed that the doped crystals possess very low absorption in the entire visible region. The dielectric constant has been studied as a function of frequency for the doped crystals. The thermal stability was evaluated by TG-DSC analysis.

scholarly journals Structural and Enhanced Optical Properties of Stabilized γ‒Bi2O3 Nanoparticles: Effect of Oxygen Ion Vacancies

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1023 ◽  
Author(s):  
Ashish Chhaganlal Gandhi ◽  
Chia-Liang Cheng ◽  
Sheng Yun Wu
Keyword(s):  
Room Temperature ◽  
Excess Oxygen ◽  
Ambient Atmosphere ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Band Emission ◽  
Oxygen Ion ◽  
Integrated Intensity ◽  
Effect Of Oxygen

We report the synthesis of room temperature (RT) stabilized γ–Bi2O3 nanoparticles (NPs) at the expense of metallic Bi NPs through annealing in an ambient atmosphere. RT stability of the metastable γ–Bi2O3 NPs is confirmed using synchrotron radiation powder X-ray diffraction and Raman spectroscopy. γ–Bi2O3 NPs exhibited a strong red-band emission peaking at ~701 nm, covering 81% integrated intensity of photoluminescence spectra. Our findings suggest that the RT stabilization and enhanced red-band emission of γ‒Bi2O3 is mediated by excess oxygen ion vacancies generated at the octahedral O(2) sites during the annealing process.

Mechanical Alloying Behavior in the Nb-Si, Ta-Si, and Nb-Ta-Si Systems

1988 ◽  
Vol 133 ◽  
Author(s):  
K. S. Kumar ◽  
S. K. Mannan
Keyword(s):  
High Temperature ◽  
Mechanical Alloying ◽  
Mechanical Milling ◽  
Room Temperature ◽  
Crystalline Compound ◽  
X Ray Diffraction ◽  
X Ray ◽  
Β Phase ◽  
Α Phase

ABSTRACTThe mechanical alloying behavior of elemental powders in the Nb-Si, Ta-Si, and Nb-Ta-Si systems was examined via X-ray diffraction. The line compounds NbSi2 and TaSi2 form as crystalline compounds rather than amorphous products, but Nb5Si3 and Ta5Si3, although chemically analogous, respond very differently to mechanical milling. The Ta5Si3 composition goes directly from elemental powders to an amorphous product, whereas Nb5Si3 forms as a crystalline compound. The Nb5Si3 compound consists of both the tetragonal room-temperature α phase (c/a = 1.8) and the tetragonal high-temperature β phase (c/a = 0.5). Substituting increasing amounts of Ta for Nb in Nb5Si3 initially stabilizes the α-Nb5Si3 structure preferentially, and subsequently inhibits the formation of a crystalline compound.

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