Solid Silicon at the Melting Temperature is Crystalline

1983 ◽  
Vol 23 ◽  
Author(s):  
D. K. Biegelsen ◽  
R. J. Nemanich ◽  
L. E. Fennell ◽  
R. A. Street
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Energy Distribution ◽  
Equilibrium State ◽  
Melting Temperature ◽  
Strong Evidence ◽  
Equilibrium Phase ◽  
Amorphous Structure ◽  
Silicon Thin Films ◽  
High Temperature System

ABSTRACTRecently it has been proposed that solid silicon at the melting temperature is amorphous. There is no known case of a solid for which an amorphous structure is the equilibrium state. Silicon thin films on insulating substrates, when heated radiantly, melt inhomogeneously and provide an accessible high temperature system for a study of a solid coexisting with its melt. Using the intensity, energy distribution and polarization of Raman scattering from silicon lamellae, we have proved that the equilibrium phase is in fact crystalline. Furthermore, we give strong evidence that the solid regions have {100} texture at Tm.

Metastable Phase Equilibria in Co-Deposited Ni1−xZrx Thin Films

1991 ◽  
Vol 230 ◽  
Author(s):  
J. B. Rubin ◽  
R. B. Schwarz
Keyword(s):  
Thin Films ◽  
Cooling Rate ◽  
Metastable Phase ◽  
Equilibrium Phase ◽  
Equilibrium Phase Diagram ◽  
Amorphous Structure ◽  
Nucleation Theory ◽  
Glass Forming ◽  
Constant Heating

AbstractWe determine the glass forming range (GFR) of co-deposited Ni1−xZrx (0 < x < 1) thin films by measuring their electrical resistance during in situ constant-heating-rate anneals. The measured GFR is continuous for 0.10 < x < 0.87. We calculate the GFR of Ni-Zr melts as a function of composition and cooling rate using homogeneous nucleation theory and a published CALPHAD-type thermodynamic modeling of the equilibrium phase diagram. Assuming that the main competition to the retention of the amorphous structure during the cooling of the liquid comes from the partitionless crystallization of the terminal solid solutions, we calculate that for dT/dt = 1012 K s−1, the GFR extends to x = 0.05 and x = 0.96. Better agreement with the measured values is obtained assuming a lower ‘effective’ cooling rate during the condensation of the films.

Epitaxy-Like Growth of Polycrystalline Silicon on the Seed Crystallites Grown on Glass

1996 ◽  
Vol 452 ◽  
Author(s):  
Y. Miyamoto ◽  
A. Miida ◽  
I. Shimizu
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Atomic Hydrogen ◽  
Polycrystalline Silicon ◽  
Surface Reaction ◽  
Preferential Orientation ◽  
Silicon Thin Films

AbstractPolycrystalline silicon thin films were grown on glass by two-steps, i.e., deposition of seeds on glass (1) and growth epitaxy-like on the seeds (2). For the growth of seeds, the surface reaction was intentionally enhanced by impingment of atomic hydrogen at rather high temperature (450 °C). Strongly textured polycrystalline Si exhibiting (220) preferential orientation was grown epitaxy-like on the seeds.

Stress and Microstructural Evolution of Lpcvd Polysilicon Thin Films During High Temperature Annealing

1996 ◽  
Vol 441 ◽  
Author(s):  
Chia-Liang Yu ◽  
Paul A. Flinn ◽  
Seok-Hee Lee ◽  
John C. Bravman
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Stress Relaxation ◽  
Deposition Temperature ◽  
Stress Generation ◽  
Deformation Model ◽  
Silicon Thin Films ◽  
Compressive Stresses ◽  
Polysilicon Films ◽  
Curvature Measurements

AbstractThe mechanisms of stress generation and stress relaxation of LPCVD silicon thin films were studied using high temperature wafer curvature measurements. The stresses generated during depositions are measured as functions of deposition temperature and microstructure. Amorphous silicon deposited with a compressive stress shows a large stress change toward tensile during crystallization. The stress relaxation of polysilicon films deposited with tensile stresses can be described by a deformation model from Ashby and Frost [1]. The polysilicon films deposited with compressive stresses have hydrogen incorporated during deposition and shows hydrogen evolution during thermal cycles.

Self-propagating, high-temperature combustion synthesis of rhombohedral AlPt thin films

2006 ◽  
Vol 21 (12) ◽  
pp. 3168-3179 ◽  
Author(s):  
D.P. Adams ◽  
M.A. Rodriguez ◽  
C.P. Tigges ◽  
P.G. Kotula
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Equilibrium Phase ◽  
Silicon Substrates ◽  
Multilayer Thin Films ◽  
Temperature Combustion ◽  
High Temperature Reactions ◽  
Sputter Deposited ◽  
Passivated Silicon ◽  
High Temperature Combustion

Sputter-deposited, Al/Pt multilayer thin films of various designs exhibited rapid, self-propagating, high-temperature reactions. With reactant layers maintained at ∼21 °C prior to ignition and films adhered to oxide-passivated silicon substrates, the propagation speeds varied from approximately 20 to 90 m/s depending on bilayer dimension and total film thickness. Contrary to current Al–Pt equilibrium phase diagrams, all multilayers reacted in air and in vacuum transformed into rhombohedral AlPt having a space group R-3(148). Rietveld refinement of AlPt powder (generated from thin film samples) yielded trigonal/hexagonal unit cell lattice parameters of a = 15.634(3) Å and c = 5.308(1) Å; the number of formula units = 39. Rhombohedral AlPt was stable to 550 °C with transformation to a cubic FeSi-type structure occurring above this temperature.

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

Magnetic energy distribution in polycrystalline sputtered CoCr magnetic thin films

2008 ◽  
Vol 42 (2) ◽  
pp. 125-128
Author(s):  
J. F. Al-Sharab ◽  
J. E. Wittig ◽  
G. Bertero ◽  
T. Yamashita ◽  
J. Bentley ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Distribution ◽  
Magnetic Energy ◽  
Magnetic Thin Films
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