X-Ray Photoelectron and Auger Electron Forward-Scattering Studies of the Epitaxial Growth of Fe on Ag(100).

1991 ◽  
Vol 229 ◽  
Author(s):  
William F. Egelhoff

AbstractA controversy has arisen in the past year over whether or not the growth of Fe on Ag(100) at room temperature occurs by a layer-by-layer mechanism. The present work attempts to address this controversy with an investigation of the issues, primarily by x-ray photoelectron (XPS) and Auger electron forward scattering, but with important supporting data from low-energy electron diffraction (LEED), and reflection high-energy electron diffraction (RHEED) oscillations. The results of this work suggest that the origin of the controversy lies in different substrate preparation techniques which produce different atomic step densities on the Ag(100) surface. The step sites are implicated as being the initiators of major departures from a layer-by-layer growth mode whenever most of the deposited Fe atoms have sufficient mobility to reach these steps. However, even when the Fe atoms cannot reach these steps it appears that atomic place-exchange occurs with ≥25% of the top-layer Ag atoms. Atomic place-exchange mechanisms, which could account for this intermixing, have been observed in recent molecular-dynamics simulations of epitakial growth. Thus it seems probable that under the conditions that appear to produce layer-by-layer growth, the growth begins as layer-by-layer growth of an FeAg alloy, and only becomes layer-by-layer in pure Fe as the segregating Ag atoms gradually get left behind in the growing Fe film.

1992 ◽  
Vol 275 ◽  
Author(s):  
V. S. Achutharaman ◽  
N. Chandrasekhar ◽  
A. M. Goldman

ABSTRACTIntensity oscillations of the specular reflection high energy electron diffraction (RHEED) beam contain useful information on the mode of growth and the evolving structure of thin films. We present RHEED studies of the growth of DyBa2Cu3O7−x films and DyBa2Cu3O7−x/DY2O3/DyBa2Cu3O7−x structures on SrTiO3; substrates deposited by ozone-assisted molecular beam epitaxy. The effect of substrate temperature, ozone flux and surface step densities on the epitaxial relationship and evolving microstructure will be discussed. The strong damping of the oscillations and identical time periods under different nuoleation and growth conditions suggest that the intensity oscillations are a consequence of to diffuse scattering from step edges rather than a layer-by-layer growth mode. It was also found that Dy2O3 can be used to fabricatee tri-layer type structures but not superlattice structures.


1998 ◽  
Vol 05 (01) ◽  
pp. 157-161 ◽  
Author(s):  
R. Gunnella ◽  
P. Castrucci ◽  
N. Pinto ◽  
P. Cucculelli ◽  
I. Davoli ◽  
...  

The influence of Sb as a surfactant on the formation of Si/Ge interface is studied by means of XPD (X-ray photoelectron diffraction) and AED (Auger electron diffraction) from Ge and Si core levels. The technique employed is particularly suitable for checking the film tetragonal distortion, the growth morphology and the sharpness of the interface. We found a layer by layer growth mode for 3 ML of Ge on Si(001) and related values of strain of the film close to the value predicted by the elastic theory which enforces the use of such a surfactant to obtain high quality and sharp heterostructures. In addition, studying the influence of 3 ML of the Si cap layer on the 3 ML Ge, we obtain no indication of Ge segregation into the Si cap layer. Finally, evidences of quality degradation after high temperature (T > 600° C ) annealing are shown.


2002 ◽  
Vol 749 ◽  
Author(s):  
Masao Kamiko ◽  
Hiroaki Chihaya ◽  
Hiroyuki Mizuno ◽  
Junhua Xu ◽  
Isao Kojima ◽  
...  

ABSTRACTWe have investigated the effect of Bi on the homoepitaxial growth of Fe(100) by means of reflection high-energy electron diffraction (RHEED). It was clearly found that Bi induces layer-by-layer growth of Fe on Fe(100)-c(2×2)O reconstruction surface. The result of the dependence of the growth behavior as a function of Bi layer thickness suggests that there is optimum amount of Bi surfactant layer that induces the smoother layer-by-layer growth. A strong surface segregation of Bi was found at the top of surface and acts as a surfactant by promoting the interlayer transport.


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