Influence of Structure on the Soft X-Ray Optical Properties of Metallic Multilayers

1991 ◽  
Vol 229 ◽  
Author(s):  
J. M. Slaughter ◽  
Patrick A. Kearney ◽  
Charles M. Falco
Keyword(s):  
Optical Properties ◽  
Electron Diffraction ◽  
High Energy ◽  
Energy Electron ◽  
Ex Situ ◽  
Scanning Tunneling ◽  
X Rays ◽  
Actual Performance ◽  
Rutherford Back Scattering ◽  
X Ray

AbstractMultilayer thin film structures for reflecting soft x-rays are now being fabricated in a number of laboratories. However, understanding of. the optical properties of these structures is presently limited by lack of knowledge of the microstructure of the layers, as well as of the details of the interfaces. In this paper we present results from our studies of multilayers grown by molecular beam epitaxy (MBE), characterized in situ by reflection high energy electron diffraction (RHEED), low energy electron diffraction (LEED), Auger, and x-ray photoelectron spectroscopy (XPS), and characterized ex situ by scanning tunneling microscopy (STM), transmission electron microscopy (TEM), x-ray diffraction, and Rutherford back scattering (RBS). In the case of Mo/Si multilayers, we observe the formation of an amorphous interfacial silicide, which can have a positive effect on the performance of these evaporated multilayer mirrors. We observe a contraction in the period of these multilayers as the deposition temperature is raised from 50 °C to 250 °C, corresponding to an increase in the thickness of the interfacial silicide. This contraction indicates that the silicide is more dense than the average atomic density of its components. We also discuss Ag/B and Pd/B multilayers, which have very similar theoretical performance. However, due to differences in the multilayer structures formed, the actual performance of multilayers made from these materials is radically different. The structural differences originate from different growth modes for Ag and Pd on B.

Migration Enhanced Epitaxy of GaAs Studied by Reflection High Energy Electron Diffraction and Scanning Tunneling Microscopy

1993 ◽  
Vol 312 ◽  
Author(s):  
Jianming Fu ◽  
D. L. Miller ◽  
J. Kim ◽  
M. C. Gallagher ◽  
R. F. Willis
Keyword(s):  
Electron Diffraction ◽  
Scanning Tunneling Microscopy ◽  
High Energy ◽  
Energy Electron ◽  
Ex Situ ◽  
Scanning Tunneling ◽  
High Energy Electron ◽  
Tunneling Microscopy ◽  
Migration Enhanced Epitaxy ◽  
Step Density

AbstractMigration enhanced epitaxy (MEE) of GaAs on (001) GaAs substrates was studied by reflection high energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). In MEE, Ga and As species are alternately deposited on the growing surface. Ga adatom migration can be enhanced by the low arsenic pressure environment. The STM study was performed ex-situ by the arsenic capping and decapping procedure. We have demonstrated the correlation between the peak RHEED specular intensity during MEE growth and the variation of the lateral step density on the surface, even though the surface stoichiometry changes repetitively during MEE. The peak RHEED intensity during MEE is inversely dependent on the surface step density. The MEE surface exhibited a lower step density than the MBE surface, as shown by both RHEED and STM. However, the MEE surface still exhibited a much higher step density than a well-annealed surface. Consequently we believe that to achieve an atomically flat interface, annealing at high temperature in an arsenic flux is still necessary even if MEE is employed.

Surface Structure and Morphology of Mg-Segregated, Epitaxial Fe3O4 Thin Films on Mgo(001)

1997 ◽  
Vol 474 ◽  
Author(s):  
J. F. Anderson ◽  
Markus Kuhn ◽  
Ulrike Diebold ◽  
K. Shaw ◽  
P. Stroyanov ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Photoelectron Spectroscopy ◽  
Quantum Interference ◽  
Surface Characterization ◽  
High Energy ◽  
Energy Electron ◽  
Scanning Tunneling ◽  
Prolonged Heating ◽  
X Ray

ABSTRACTWe have investigated the structural and compositional changes that are induced by the segregation of substrate Mg to the surface of 1μm-thick Fe3O4 films on MgO(001). The thin films have been grown with plasma-assisted MBE, and characterization with RHEED (reflection high-energy electron diffraction), x-ray diffraction (XRD), and Superconducting Quantum Interference Device (SQUID) magnetometry show slightly strained, single-crystalline Fe3O4 films. For the surface studies, we have combined Low-Energy Electron Diffraction (LEED) and Scanning Tunneling Microscopy (STM). Initial and final surface characterization employed X-ray Photoelectron Spectroscopy (XPS) and Ion Scattering Spec-troscopy (ISS) respectively. The surfaces of the MBE-grown samples are flat and show a (√2 × √2)R45° reconstruction with respect to the Fe3O4 surface unit cell. We observe the onset of Mg segregation to the surface at around 700 K, with long, narrow extensions of terraces being observed growing along the [110] and [110] directions. Upon prolonged heating at 800 K, massive Mg segregation to the surface is observed. Heating in an oxygen atmosphere induces a 1×4 surface reconstruction, and results in extremely long (≈ 1000 Å), wide terraces.

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

Effects of Phosphorus Exposure on Arsenic-Stabilized GaAs 2×4 Surface

1993 ◽  
Vol 312 ◽  
Author(s):  
A. H. Bensaoula ◽  
A. Freundlich ◽  
A. Bensaoula ◽  
V. Rossignol
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Growth Process ◽  
High Energy ◽  
Ex Situ ◽  
Chemical Beam Epitaxy ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray

AbstractPhosphorus exposed GaAs (100) surfaces during a Chemical Beam Epitaxy growth process are studied using in-situ Reflection High Energy Electron Diffraction and ex-situ High Resolution X-ray Diffraction. It is shown that the phosphorus exposure of a GaAs (100) surface in the 500 – 580 °C temperature range results in the formation of one GaP monolayer.

Slow Decay of Reflection High Energy Electron Diffraction Oscillations in Cal1-xMgxF2

1996 ◽  
Vol 441 ◽  
Author(s):  
Mitsuhiro Kushibe ◽  
Yuriy V. Shusterman ◽  
Nikolai L. Yakovlev ◽  
Leo J. Schowalter
Keyword(s):  
Phase Separation ◽  
Electron Diffraction ◽  
Lattice Constant ◽  
Room Temperature ◽  
High Energy ◽  
Energy Electron ◽  
Scanning Tunneling ◽  
High Energy Electron ◽  
Tunneling Microscopy ◽  
Slow Decay

AbstractMagnesium is incorporated into the growth of Ca1-xMgxF2 to reduce the lattice constant of fluorite (CaF2) which is 0.6% larger than that of Si at room temperature. When grown epitaxially on Si(111) substrates at 300°C, the lattice constant of the alloy became smaller than that of Si by 1.5% when the Mg concentration was around 20%. At higher Mg concentrations, the lattice constant did not decrease any further. This invariability of the lattice constant was caused by a phase separation of the Ca1-xMgxF2 layer into a Mg-rich region and a Mg-deficient region. When the growth temperature was increased, the critical Mg concentration for the phase separation became smaller. When Ca1-xMgxF2 was grown on vicinal Si(111) substrates, the reflection high energy electron diffraction (RHEED) intensity oscillations reflected no change in the composition, suggesting segregation of a Mg-rich phase along the steps. Nevertheless, the oscillations in the intensity of the specular spot for Ca1-xMgxF2 lasted longer than those observed for pure CaF2, suggesting a flatter surface for the alloy. Scanning tunneling microscopy (STM) observations support this model.

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