Variation of Thermal Donors in Diffused Wafers by rapid Thermal Annealing

1991 ◽  
Vol 224 ◽  
Author(s):  
Takahide Sugiyama ◽  
Akira Usami ◽  
Akira Ito ◽  
Taichi Natori ◽  
Yutaka Tokuda ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Level ◽  
Total Concentration ◽  
Annihilation Rate ◽  
Low Oxygen ◽  
Heat Treated ◽  
Capacitance Voltage ◽  
Transient Spectroscopy ◽  
Low Oxygen Concentration

AbstractVariations of thermal donors (TDs) in highly phosphorus-diffused n-type silicon wafers (diffused wafer) have been studied with deep-level transient spectroscopy and capacitance-voltage measurements. The introduction and annihilation of TDs have been performed with heat treatment at 450°C and rapid thermal annealing (RTA) in the temperature range 600-900°C,respectively. In diffused floating zone-grown (FZ) silicon wafer, TDs were observed. It is thought that oxygen diffuses into FZ silicon during the diffusion process, since no TDs are generally formed in FZ silicon for the low oxygen concentration. The behavior of TDs in diffused wafer corresponded with that in oxygen-rich bulk silicon. TDs were completely annihilated by RTA at 700 and 800°C for the as-diffused wafers and the heat-treated ones at 450°C for 24 h, respectively, and the annihilation rate for the as-diffused wafers was fast, as compare to that for the heat-treated ones. This results may be caused by difference in the total concentration and cluster size of TDs.

Deep-level transient spectroscopy studies of thermal donor annihilation in silicon by rapid thermal annealing

1989 ◽  
Vol 4 (2) ◽  
pp. 241-243 ◽  
Author(s):  
Yutaka Tokuda ◽  
Nobuji Kobayashi ◽  
Yajiro Inoue ◽  
Akira Usami ◽  
Makoto Imura
Keyword(s):  
Heat Treatment ◽  
Thermal Stress ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electron Trap ◽  
Thermal Donor ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies

The annihilation of thermal donors in silicon by rapid thermal annealing (RTA) has been studied with deep-level transient spectroscopy. The electron trap AO (Ec – 0.13 eV) observed after heat treatment at 450 °C for 10 h, which is identified with the thermal donor, disappears by RTA at 800 °C for 10 s. However, four electron traps, A1 (Ec 0.18 eV), A2 (Ec – 0.25 eV), A3 (Ec – 0.36 eV), and A4 (Ec – 0.52 eV), with the concentration of ∼1012 cm−3 are produced after annihilation of thermal donors by RTA. These traps are also observed in silicon which receives only RTA at 800 °C. This indicates that traps A1–A4 are thermal stress induced or quenched-in defects by RTA, not secondary defects resulting from annealing of thermal donors.

The Ion Implanted Arsenic Tail in Silicon

1989 ◽  
Vol 147 ◽  
Author(s):  
S. E. Beck ◽  
R. J. Jaccodine ◽  
C. Clark
Keyword(s):  
Silicon Dioxide ◽  
Thermal Annealing ◽  
Anodic Oxidation ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Activation ◽  
Spreading Resistance ◽  
Transient Spectroscopy ◽  
And Diffusion

AbstractRapid thermal annealed tail regions of shallow junction arsenic implants into silicon have been investigated. Tail profiles have been roduced by an anodic oxidation and stripping technique after implantation to fluences of 1014 to 1016 cm−2 and by implanting through a layer of silicon dioxide. Electrical activation and diffusion have been achieved by rapid thermal annealing in the temperature range of 800 to 1100 °C. Electrically active defects remain after annealing. Spreading resistance and deep level transient spectroscopy results are presented. The diffusion of the arsenic tail is discussed and compared with currently accepted models.

Studies of Oxygen Introduced During Thermal Oxidation and Defects Induced by Rapid Thermal Annealing in Silicon Epitaxial Layers

1991 ◽  
Vol 224 ◽  
Author(s):  
Akira Usami ◽  
Taichi Natori ◽  
Akira Ito ◽  
Takahide Sugiyama ◽  
Seiya Hirota ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Epitaxial Layer ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Epitaxial Layers ◽  
Shallow Trap ◽  
Transient Spectroscopy

AbstractIntroduction of oxygen during thermal oxidation and production of defects by rapid thermal annealing (RTA) in n-type epitaxial Si layers were studied with deep-level transient spectroscopy measurements. We use oxygen-related thermal donors (TDs) as a monitor for introduction of oxygen in silicon epitaxial layers. It is found that oxygen is introduced from the substrate into the epitaxial layer after thermal annealing. The TD was almost annihilated by RTA at .700°C. However, a shallow trap (Ec−0.073±0.005 eV) was induced by RTA.

Point Defect Evolution During Rapid Thermal Annealing of Si+-Implanted GaAs.

1987 ◽  
Vol 92 ◽  
Author(s):  
M. Levinson ◽  
C. A. Armiento ◽  
S. S. P. Shah
Keyword(s):  
Point Defect ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Defect Formation ◽  
Deep Level ◽  
Dopant Activation ◽  
Defect Reactions ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Dlts Spectra

ABSTRACTThe point defect reactions in GaAs by which ion implant damage is removed and implanted dopants are activated remain poorly understood. Deep level capacitance transient spectroscopy (DLTS) has been used to study the effects of rapid thermal annealing (RTA) on Si-implant damage generated defects. In low implant dose samples, the results of RTA are similar to those of furnace anneals and also agree well with previous reports of boron-implanted and neutron-irradiated material. In contrast to this, higher dose samples showed much smaller than expected apparent defect concentrations. After RTA, very broad DLTS spectra and relatively little EL2 or EL3 defect formation was observed. The significance of these results with regard to the mechanisms of dopant activation and damage removal are discussed.

Effects of Rapid Thermal Annealing on SiNx Capped MBE GaAs

1992 ◽  
Vol 262 ◽  
Author(s):  
Akira Ito ◽  
Akira Usami ◽  
Hiroyuki Ueda ◽  
Hiroyuki Kano ◽  
Takao Wada
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Photoelectron Spectroscopy ◽  
Deep Level ◽  
Error Function ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Complementary Error Function ◽  
Cap Layer ◽  
Transient Spectroscopy

ABSTRACTEffects of rapid thermal annealing (RTA) with a SiNx encapsulant on molecular beam epitaxial GaAs are studied with deep level transient spectroscopy (DLTS) measurements and x-ray photoelectron spectroscopy (XPS) measurements. The RTA was performed at various temperatures form 800°C to 1100°C for 6sec. The electron trap EL2 is produced by the RTA above 850°C The EL2 depth profile produced after the RTA is fitted with a complementary error function. The SiNx cap layer is more effective to prevent the formation of the EL2 than the SiO* cap layer during the RTA, because the critical temperature of the SiNx cap where the EL2 concentration starts to increase is higher than that of the SiOx cap. Slight increase of the oxidized Ga atoms is observed after the RTA near the cap surface. The enhancement of the EL2 trap is discussed considering the outdiffusion of Ga atoms into the cap layer during the RTA.

Improvement of Pin Photodiodes on the Soi Layer by Rapid Thermal Annealing

1995 ◽  
Vol 378 ◽  
Author(s):  
Yoshimaro Fujii ◽  
Akira Usami ◽  
Katsuhiro Fujiyoshi ◽  
Hideaki Yoshida ◽  
Masaya Ichimura
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Dark Current ◽  
Open Circuit Voltage ◽  
Deep Level ◽  
Open Circuit ◽  
Silicon On Insulator ◽  
Transient Spectroscopy ◽  
Pin Photodiodes ◽  
Spectral Responses

AbstractElectrical properties of PIN photodiodes fabricated on the bonded silicon on insulator (SOI) wafers annealed at 900°C for 5 seconds were evaluated in order to investigate the effect of rapid thermal annealing (RTA) on SOI wafers. Traps in the SOI layers with different thicknesses (10,30,100 μm) were investigated using the deep level transient spectroscopy (DLTS) method. In the SOI layer with a thickness of 100 μm, a trap with deep energy level (about Ec-Et=0.55 eV) was observed and the concentration of the trap decreased from 5.0 × 1011 cm−3 to 1.5 × 1011 cm−3 by RTA. For PIN photodiodes on the 100 μm-thick SOI layer, the dark current decreased from 2 × 10−9 A to 6 × 10−10 A, and sensitivity uniformity for a 35 μmφ light spot and spectral responses were both improved by RTA. Lifetimes were obtained from open-circuit voltage (Voc) decay curves for 940 nm and 655 nm light, and they increased from 37 μs to 57 μs and from 47 μs to 62 μs, respectively, by RTA. For thinner SOI layers (thickness=10, 30 μm), PIN photodiodes have good uniformity and low dark current, and their characteristics were not changed by RTA.

On the Origin of the New Electron Traps Induced By Rapid Thermal Annealing in GaAs Using Capping Proximity Technique.

1988 ◽  
Vol 144 ◽  
Author(s):  
G. Marrakchi ◽  
G. Chaussemy ◽  
A. Laugier ◽  
G. Guillot.
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Native Defect ◽  
Physical Origin ◽  
Electron Traps ◽  
Native Defects ◽  
Growth Method ◽  
Transient Spectroscopy

ABSTRACTRapid Thermal Annealing (RTA) effects on generation or annihilation of deep levels in GaAs have been investigated by Deep Level Transient Spectroscopy (DLTS). Capping proximity technique using three annealing configurations are employed to anneal Liquid Encapsulated Czochralski (LEC) and Bridgman (B) substrates, or Vapor Phase Epitaxy (VPE) and Liquid Phase Epitaxy (LPE) layers. The RTA treatment is performed from 800 to 950°C for two annealing times ( 3 and 10s).The DLTS data show that the evolution of the native defects depends on the GaAs growth method and also the annealing configuration. We observe the appearance of two new electron traps named RL1 and RL2 induced by the RTA process which depend on the kind of substrate: RL1 and RL2 are created in LEC material while only RL1 is detected in B material. A general comparison of our results with others reported in the literature show that these new electron traps are related to the change of stoichiometry at the GaAs surface and also depend on the existence of specific native defects in the starting GaAs material. It is proposed that the creation of RL1 is related to the EL6 native defect and discuss a possible physical origin for this level. We also propose that RL2 and EL5 originate from the same defect and suggest the divacancy VGaVAs as a possible origin for this trap.

Investigation of the Influence of Deep-Level Defects on the Conversion Efficiency of Si-based Solar Cells

MRS Advances ◽  
2016 ◽  
Vol 1 (14) ◽  
pp. 911-916 ◽  
Author(s):  
Vladimir G. Litvinov ◽  
Nikolay V. Vishnyakov ◽  
Valery V. Gudzev ◽  
Nikolay B. Rybin ◽  
Dmitry S. Kusakin ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conversion Efficiency ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Total Concentration ◽  
Characteristics Method ◽  
Capacitance Voltage ◽  
Transient Spectroscopy ◽  
P Type

ABSTRACTThe influence of deep level defects (DLs) on the conversion efficiency of multicrystalline Si-based standard solar cells (SCs) is investigated. Multicrystalline p-type Si wafers with 156×156 mm dimensions and 200 μm thickness were used for SCs preparation. Three types of SCs with conversion efficiency 10%, 16.8% and 20.4% were studied using capacitance voltage characteristics method (C-V) and by current deep level transient spectroscopy (I-DLTS). The correlation between the total concentration of DLs and the values of the SCs conversion efficiency is found.

Deep Level Investigation in Si-GaAs by Rapid Thermal Annealing

1997 ◽  
Vol 470 ◽  
Author(s):  
Zhao Zhouying ◽  
Wu Fengmai ◽  
Li Ningsheng
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Level ◽  
Thermal Conversion ◽  
Deep Levels ◽  
Hall Measurement ◽  
Induced Current ◽  
Shallow Acceptor ◽  
Transient Spectroscopy

ABSTRACTDeep levels in undoped LEC semi-insulating (SI) GaAs have been investigated by rapid thermal annealing (RTA). The GaAs wafers were annealed for 10 sec in N2 atmosphere at temperatures ranging from 500 to 800 °C. Using photo-induced current transient spectroscopy (PITS) and Hall measurement, we have investigated the behavior of various deep levels as a function of RTA temperature and the phenomenon of thermal conversion. The change and even conversion in resistivity is related not only to decrease of the EL2 and EL6 defects, but also to shallow acceptor caused by arsenic-escaping in the surface of the wafer. Choosing proper RTA temperaturte will improve the electrical properties of SI-GaAs after RTA.

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