Synchrotron X-Ray Topography as a Non-Destructive Monitor of Damage Accompanying IC Processing

1991 ◽  
Vol 224 ◽  
Author(s):  
Michael Dudley ◽  
Franklyn F.Y. Wang ◽  
Thomas Fanning ◽  
David Gordon-Smith
Keyword(s):  
Carbon Content ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
High Carbon ◽  
High Carbon Content ◽  
X Ray ◽  
White Beam ◽  
Transmission Geometry ◽  
Non Destructive

AbstractSynchrotron white beam x-ray topography in transmission geometry has been used to monitor the damage accompanying a Rapid Thermal Processing (RTP) treatment of Si wafers. The behavior of low and high carbon-content Si is contrasted and discussed. The applicability of this technique to this kind of study is demonstrated, with particular emphasis being laid on its non-destructive nature. The general usefulness of the technique as a monitor for damage accompanying IC processing is discussed.

Synchrotron X-Ray Topographic Study of the Behavior of Defects in High Carbon-Content Si Wafers during RTP

1991 ◽  
Vol 225 ◽  
Author(s):  
Thomas Fanning ◽  
Michael Dudley ◽  
Franklyn F.Y. Wang ◽  
David Gordon-Smith ◽  
David T. Hodul
Keyword(s):  
Carbon Content ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Defect Structures ◽  
Low Carbon ◽  
High Carbon ◽  
High Carbon Content ◽  
Strain Fields ◽  
X Ray ◽  
Transmission Geometry

ABSTRACTCzochralski (CZ) grown Si wafers, specially prepared with unusually high carbon content (ranging from 3 to 7 ppma), were subjected to a rapid thermal processing (RTP) treatment at 1050°C for 60s. Synchrotron white beam x-ray topography in transmission geometry was used to study defect structures in these Si wafers, both prior and subsequent to this RTP treatment. Observations of both the partial relaxation of the strain fields of precipitates and widespread nucleation and propagation of dislocations accompanying RTP are presented and discussed. Results are contrasted with those from parallel studies previously conducted on low carbon content wafers.

scholarly journals A Novel Approach to Charcoal Fine Waste: Sustainable Use as Filling of Polymeric Matrices

2022 ◽  
Author(s):  
Fabíola Martins Delatorre ◽  
Gabriela Fontes Mayrinck Cupertino ◽  
Michel Picanço Oliveira ◽  
Felipe Silva Gomes ◽  
Luciene Paula Roberto Profeti ◽  
...  
Keyword(s):  
Carbon Content ◽  
Photoelectron Spectroscopy ◽  
Raw Materials ◽  
Sustainable Use ◽  
Coal Industry ◽  
High Carbon ◽  
Fixed Carbon ◽  
High Carbon Content ◽  
X Ray ◽  
Novel Approach

Abstract This study aims to evaluate charcoal fines as potential reinforcing agents in biocomposites. Charcoal has both high carbon content and surface area depending on the manufacturing temperatures. Charcoal is a common residue in the coal industry that we propose using it to reinforce filling agents in several matrices in order to add value to this residue. This study investigated charcoal fines when using three pyrolysis temperatures (400, 600, and 800°C) to identify the most suitable charcoal to be used as raw materials in producing carbon biocomposites. We evaluated apparent density, porosity, morphology, and immediate chemical composition, and then performed a Fourier-transform infrared spectroscopy (FTIR) and an X-ray photoelectron spectroscopy (XPS). Charcoal fines produced at 800°C showed promising results as a polymeric matrix filling due to their higher porosity (81.08%), fixed carbon content (96.77%), and hydrophobicity.

ALGOMA AR225

Alloy Digest ◽  
2003 ◽  
Vol 52 (12) ◽  
Keyword(s):  
Carbon Steel ◽  
Chemical Analysis ◽  
Physical Properties ◽  
Carbon Content ◽  
Brinell Hardness ◽  
Low Cost ◽  
Heat Treating ◽  
Rolled Plate ◽  
High Carbon ◽  
High Carbon Content

Abstract Algoma AR225 is a carbon steel developed primarily to supply a low-cost material for high-abrasion applications. It is furnished in the form of as-rolled plate with a relatively high carbon content (0.35-0.45%). AR-225 is sold on the basis of chemical analysis only; the number 225 signifies the approximate Brinell hardness. On thicknesses one-half inch and over, this Brinell value may be lower than 225 because of higher finishing temperatures. This datasheet provides information on composition, physical properties, hardness, and elasticity. It also includes information on forming, heat treating, machining, and joining. Filing Code: CS-138. Producer or source: Algoma Steel Corporation Ltd.

Polyimide as carbon and ceramic polysilazane precursors to obtain high carbon content ceramic for high-temperature applications

2020 ◽  
Author(s):  
André V. B. Andrade ◽  
Luiz F. Belchior Ribeiro ◽  
Emanoelle Diz Acosta ◽  
Fernando J. Da Costa ◽  
Maíra D. Mallmann ◽  
...  
Keyword(s):  
High Temperature ◽  
Carbon Content ◽  
High Carbon ◽  
High Carbon Content ◽  
Temperature Applications

Novel Multilayer Process for CuInSe2 Thin Film Formation by Rapid Thermal Processing

1997 ◽  
Vol 485 ◽  
Author(s):  
Chih-hung Chang ◽  
Billy Stanbery ◽  
Augusto Morrone ◽  
Albert Davydov ◽  
Tim Anderson
Keyword(s):  
Thermal Processing ◽  
Physical Vapor Deposition ◽  
Film Formation ◽  
Rapid Thermal Processing ◽  
Precursor Film ◽  
Bilayer Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposition Parameters ◽  
Cuinse2 Thin Film

AbstractCuInSe2 thin films have been synthesized from binary precursors by Rapid Thermal Processing (RTP) at a set-point temperature of 290°C for 70 s. With appropriate processing conditions no detrimental Cu2-xSe phase was detected in the CIS films. The novel binary precursor approach consisted of a bilayer structure of In-Se and Cu-Se compounds. This bilayer structure was deposited by migration enhanced physical vapor deposition at a low temperature (200°C) and the influence of deposition parameters on the precursor film composition was determined. The bilayer structure was then processed by RTP and characterized for constitution by X-ray diffraction and for composition by Wavelength Dispersive X-ray Spectroscopy.

Effects of Carbon Concentration Upon Oxygen Precipitation in Cz Si

1987 ◽  
Vol 104 ◽  
Author(s):  
S. Hahn ◽  
M. Arst ◽  
K. N. Ritz ◽  
S. Shatas ◽  
H. J. Stein ◽  
...  
Keyword(s):  
Carbon Content ◽  
Carbon Concentration ◽  
High Carbon ◽  
High Carbon Content ◽  
Oxygen Precipitation ◽  
Oxygen Precipitate ◽  
High Carbon Concentration ◽  
Precipitation Characteristics ◽  
C Complex ◽  
Oxide Precipitate

ABSTRACTEffects of high carbon concentration upon oxygen precipitate formation in Cz silicon have been investigated by combining various furnace and rapid thermal annneals. Even though oxide precipitate density increases with increasing carbon levels, Cs, synchrotron radiation section topographs of processed high carbon content wafers (Cs ∼ 4ppma) exhibit Pendellosung fringes, indicating a strain free bulk state. Our optical microscopic data have also shown very few defect etch features inside the bulk. A model based upon a direct coupling of both SiO2 and Si-C complex formation reactions is used to explain rather unique oxygen precipitation characteristics in the high carbon content Cz Si materials.

Synthesis of high carbon content microspheres using 2-step microwave carbonization, and the influence of nitrogen doping on catalytic activity

Carbon ◽  
2013 ◽  
Vol 60 ◽  
pp. 307-316 ◽  
Author(s):  
Alum Jung ◽  
Suenghoon Han ◽  
Teawon Kim ◽  
Won Joon Cho ◽  
Kun-Hong Lee
Keyword(s):  
Catalytic Activity ◽  
Carbon Content ◽  
Nitrogen Doping ◽  
High Carbon ◽  
High Carbon Content

Contactless Measurements of Slip Lines Intentionally Introduced in Si Wafers During Rapid Thermal Processing

1991 ◽  
Vol 224 ◽  
Author(s):  
A. Usami ◽  
H. Shiraki ◽  
H. Fujiwara ◽  
R. Abe ◽  
N. Osamura ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Signal Intensity ◽  
Carrier Lifetime ◽  
Temperature Drop ◽  
Rapid Thermal Processing ◽  
X Ray ◽  
Slip Lines ◽  
Recombination Centers ◽  
Microwave Probe ◽  
Good Agreement

AbstractThe slip lines introduced in Si wafers during rapid thermal processing (RTP) were revealed with focused reflectance microwave probe (RMP) method. The signal intensity of RMP which is related to optically injected excess carrier concentration decreases at slip lines. The region in which the signal intensity decreased is in good agreement with results of X-ray topography and theoretical analysis considering thermal stress caused by temperature drop at the wafer periphery during RTP. According these results, it is considered that carrier lifetime is decreased by slip dislocations which are effective recombination centers.

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