Rapid Thermal Annealing of Titanium in an Ammonia Ambient: Kinetics and Film Properties

1991 ◽  
Vol 224 ◽  
Author(s):  
K. Srikrishna ◽  
R. Jairath ◽  
G. Huglin
Keyword(s):  
Electrical Resistivity ◽  
Titanium Nitride ◽  
Mass Spectroscopy ◽  
Specific Resistance ◽  
Silicon Substrates ◽  
Film Properties ◽  
Resistivity Measurements ◽  
Oxide Substrates ◽  
Rapid Thermal Annealer ◽  
Competing Reactions

AbstractThe reaction between titanium and ammonia to form titanium nitride in a rapid thermal annealer has been studied as a function of process temperature and substrate conditions. The films produced have been characterized by Rutherford Backscattering, Sputtered Neutral Mass Spectroscopy and four point probe electrical resistivity measurements. On oxide substrates, below 720°C only dissolution of nitrogen within the titanium is observed leading to an increase in the specific resistance of the film. Above 720°C, stoichiometric titanium nitride begins forming leading to a drop in the specific resistance of the film. Only in the vicinity of 800°C is all the titanium consumed to form TiN. However, temperatures beyond 700°C cause dissolution of oxygen within the titanium. On silicon substrates, the competing reactions of nitridation and silicidation at the two interfaces govern the extent of nitridation.

In-situ electrical-resistivity measurements in the high-voltage electron microscope

1978 ◽  
Vol 36 (1) ◽  
pp. 68-69
Author(s):  
W. E. King
Keyword(s):  
Electrical Resistivity ◽  
Electron Microscope ◽  
High Voltage ◽  
Resistivity Measurements ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
High Voltage Electron ◽  
Wide Range ◽  
Helium Gas

A side-entry type, helium-temperature specimen stage that has the capability of in-situ electrical-resistivity measurements has been designed and developed for use in the AEI-EM7 1200-kV electron microscope at Argonne National Laboratory. The electrical-resistivity measurements complement the high-voltage electron microscope (HVEM) to yield a unique opportunity to investigate defect production in metals by electron irradiation over a wide range of defect concentrations.A flow cryostat that uses helium gas as a coolant is employed to attain and maintain any specified temperature between 10 and 300 K. The helium gas coolant eliminates the vibrations that arise from boiling liquid helium and the temperature instabilities due to alternating heat-transfer mechanisms in the two-phase temperature regime (4.215 K). Figure 1 shows a schematic view of the liquid/gaseous helium transfer system. A liquid-gas mixture can be used for fast cooldown. The cold tip of the transfer tube is inserted coincident with the tilt axis of the specimen stage, and the end of the coolant flow tube is positioned without contact within the heat exchanger of the copper specimen block (Fig. 2).

scholarly journals Electrical Resistivity Measurements and Soundings on Glaciers: Introductory Remarks

1967 ◽  
Vol 6 (47) ◽  
pp. 599-606 ◽  
Author(s):  
Hans Röthlisberger
Keyword(s):  
Electrical Resistivity ◽  
Resistivity Measurements ◽  
Resistivity Method

A brief description of the resistivity method is given, stressing the points which are of particular importance when working on glaciers. The literature is briefly reviewed.

Properties of carbon films deposited by pulsed laser vaporization from pyrolytic graphite

1989 ◽  
Vol 4 (5) ◽  
pp. 1238-1242 ◽  
Author(s):  
A. P. Malshe ◽  
S. M. Chaudhari ◽  
S. M. Kanetkar ◽  
S. B. Ogale ◽  
S. V. Rajarshi ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Pyrolytic Graphite ◽  
Carbon Films ◽  
Laser Vaporization ◽  
Film Properties ◽  
Amorphous Carbon Films ◽  
Resistivity Measurements ◽  
Laser Raman ◽  
Quartz Substrates ◽  
Substrate Temperatures

Amorphous carbon films have been deposited on silicon 〈111〉 and quartz substrates by pulsed ruby laser vaporization from pyrolytic graphite. Depositions have been carried out at different substrate temperatures, and the properties of the deposited carbon films have been studied using IR and UV–VIS transmission, ellipsometry, and laser-Raman spectroscopies. Chemical and electrical resistivity measurements have also been performed. It is shown that the film properties depend critically on the substrate temperature and that at the substrate temperature of 50 °C films with substantial proportion of sp3 hybridized orbitals are obtained.

STUDY OF THE DEPENDENCE OF HIGH Tc ON VARIOUS SINTERING TEMPERATURES FOR Bi-Pb-Sr-Ca-Cu-O SUPERCONDUCTORS

1991 ◽  
Vol 05 (24n25) ◽  
pp. 1635-1638
Author(s):  
S.M. M.R. NAQVI ◽  
A.A. QIDWAI ◽  
S.M. ZIA-UL-HAQUE ◽  
FIROZ AHMAD ◽  
S.D.H. RIZVI ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Liquid Nitrogen ◽  
X Ray Diffraction ◽  
High Tc ◽  
X Ray ◽  
Resistivity Measurements ◽  
Zero Resistance

Bi1.7-Pb0.3-Sr2-Ca2-Cu3-Ox superconducting samples were prepared at 855°C, 862 C, 870 C, and 882 C sintering temperatures respectively. All samples were sintered for 120 hours. The samples were then quenched in liquid nitrogen. The electrical resistivity measurements showed that the samples sintered at 870° C had the best Tc. For these samples the Tc onset was around 120 K and the zero resistance was obtained at 108 K. X-ray diffraction studies showed that the samples were multiphased.

Learning more from electrical resistivity measurements in ferromagnetic metals

1987 ◽  
Vol 55 (3) ◽  
pp. 280-281
Author(s):  
Bernhard F. Rothenstein ◽  
Corin Tămăşdan ◽  
Rada Baea
Keyword(s):  
Electrical Resistivity ◽  
Resistivity Measurements ◽  
Ferromagnetic Metals
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