High-Conductance GaAs Tunnel Diodes by OMVPE

1991 ◽  
Vol 222 ◽  
Author(s):  
R. Venkatasubramanian ◽  
M. L. Timmons ◽  
T. S. Colpitts
Keyword(s):  
Vapor Phase ◽  
Growth Temperature ◽  
Atmospheric Pressure ◽  
Gaas Layer ◽  
Tunnel Diode ◽  
Organometallic Vapor Phase Epitaxy ◽  
Tunnel Diodes ◽  
Peak Current ◽  
Si Doping ◽  
High Conductance

ABSTRACTGaAs p+-n+ tunnel diodes have been grown by atmospheric-pressure organometallic vapor phase epitaxy (OMVPE) using zinc as the dopant for the p+ regions and either Se or Si as the dopant for the n+ regions. At a growth temperature of 700° C, using a “cycled” growth for just the Zn-doped p++-GaAs layer both the conductance and the peak current of the tunnel diode has been increased by a factor of ˜65. The conductance of the tunnel diode, maximized at a growth temperature of 650 °C with the cycled growth, is comparable to the best reported values by MBE. Cycled growths for n+ Se-doped regions reduce the tunnel-diode conductance by more than two orders of magnitude. However, the cycled growth for n+-GaAs regions formed with Si doping shows no conductance degradation. A model for these observations is presented.

Effect of growth temperature on Eu-doped GaN layers grown by organometallic vapor phase epitaxy

2010 ◽  
Vol 7 (7-8) ◽  
pp. 2040-2042 ◽  
Author(s):  
Takashi Kawasaki ◽  
Atsushi Nishikawa ◽  
Naoki Furukawa ◽  
Yoshikazu Terai ◽  
Yasufumi Fujiwara
Keyword(s):  
Vapor Phase ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy

scholarly journals Growth Temperature Dependence of Eu-Doped GaN Grown by Organometallic Vapor Phase Epitaxy

2010 ◽  
Vol 59 (9) ◽  
pp. 671-674
Author(s):  
Atsushi NISHIKAWA ◽  
Takashi KAWASAKI ◽  
Naoki FURUKAWA ◽  
Yoshikazu TERAI ◽  
Yasufumi FUJIWARA
Keyword(s):  
Temperature Dependence ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Growth Temperature Dependence

Effects of V/III ratio on Si-doping in InGaAs lattice-matched to InP grown by organometallic vapor phase epitaxy

1993 ◽  
Vol 132 (1-2) ◽  
pp. 43-47 ◽  
Author(s):  
Ji-Beom Yoo ◽  
Jeong-Soo Kim ◽  
Dong-Hoon Jang ◽  
Byung-Hwa Koak ◽  
Dae-Kon Oh ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Si Doping ◽  
Lattice Matched

Decomposition Mechanisms of Antimony Source Compounds for Organometallic Vapor-Phase Epitaxy

1990 ◽  
Vol 204 ◽  
Author(s):  
Cory A. Larsen ◽  
Robert W. Gedridge ◽  
Shin Hwa Li ◽  
Gerald B. Stringfellow
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Organometallic Vapor Phase Epitaxy ◽  
Flow Tube ◽  
Methyl Vinyl ◽  
Pyrolysis Mechanism ◽  
Tube Reactor ◽  
Decomposition Mechanisms ◽  
Carrier Gases

ABSTRACTThe decompositions of tertiary stibines (R3Sb, R = methyl, vinyl, isopropyl) were studied in an atmospheric pressure flow tube reactor, using D2 and He as carrier gases. D2 was used to isotopically label the byproducts in order to elucidate the pyrolysis mechanism. The exhaust products were analyzed by a time-of-flight mass spectrometer. The decomposition of these tertiary stibines in the presence of group Ill precursors was studied in order to simulate the conditions of organometallic vapor phase epitaxial growth. A comparison between the pyrolysis temperatures, decomposition mechanisms, and surface area effects of these Sb source compounds is presented.

EL-2 Defect Formation and Carbon Incorporation in GaAs grown by Organometallic Vapor Phase Epitaxy

1989 ◽  
Vol 163 ◽  
Author(s):  
R. Venkatasubramanian ◽  
J.M. Borrego ◽  
S.K. Ghandhi
Keyword(s):  
Partial Pressure ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Defect Formation ◽  
Deep Level ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Surface Species ◽  
Phase Loss

AbstractThe anti-site defect AsGa, EL-2, is used to understand the nature of arsenic surface species during the Organometallic Vapor Phase Epitaxy(OMVPE) of GaAs. The concentration of EL-2 in unintentionally doped n-GaAs, measured by Deep Level Transient Spectroscopy, is presented as a function of AsH3 partial pressure, TMGa partial pressure and the growth temperature. Based on this data, a model for EL-2 incorporation in OMVPE GaAs is developed in which all surface species As-H, are converted to As2 at around 765 ° C. Under the same set of growth conditions, relative carbon levels measured by 4K Photoluminescence, suggest that the increase in carbon levels with growth temperature is due to the gas-phase loss of H radical from the As-H species.

Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy

2010 ◽  
Vol 208 (2) ◽  
pp. 445-448 ◽  
Author(s):  
Naoki Furukawa ◽  
Atsushi Nishikawa ◽  
Takashi Kawasaki ◽  
Yoshikazu Terai ◽  
Yasufumi Fujiwara
Keyword(s):  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy
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