The Role of Gas Phase Decomposition in the ALE Growth of III–V Compounds

1991 ◽  
Vol 222 ◽  
Author(s):  
K. G. Reid ◽  
H. M. Urdianyk ◽  
N. A. El-Masry ◽  
S. M. Bedair

ABSTRACTThe effects of the growth temperature and exposure time to TMGa for ALE of gallium arsenide was studied using TMGa and AsH3 in a modified, vertical, atmospheric, MOCVD reactor with a rotating susceptor. It was found that the temperature range for ALE growth could -be extended from 450°C to 700°C by adjustment of the exposure time to TMGa. The maximum exposure time to TMGa was found to decrease as growth temperature increased with high temperature growth limited to exposures of only fractions of a second. Beyond a critical exposure time to TMGa, gallium droplets form on the surface. It is known that premature decomposition of TMGa in the heated gaseous boundary layer causes the formation of the gallium droplets and the consequent loss of ALE growth.

2008 ◽  
Vol 1068 ◽  
Author(s):  
Ewa Dumiszewska ◽  
Wlodek Strupinski ◽  
Piotr Caban ◽  
Marek Wesolowski ◽  
Dariusz Lenkiewicz ◽  
...  

ABSTRACTThe influence of growth temperature on oxygen incorporation into GaN epitaxial layers was studied. GaN layers deposited at low temperatures were characterized by much higher oxygen concentration than those deposited at high temperature typically used for epitaxial growth. GaN buffer layers (HT GaN) about 1 μm thick were deposited on GaN nucleation layers (NL) with various thicknesses. The influence of NL thickness on crystalline quality and oxygen concentration of HT GaN layers were studied using RBS and SIMS. With increasing thickness of NL the crystalline quality of GaN buffer layers deteriorates and the oxygen concentration increases. It was observed that oxygen atoms incorporated at low temperature in NL diffuse into GaN buffer layer during high temperature growth as a consequence GaN NL is the source for unintentional oxygen doping.


1973 ◽  
Vol 51 (21) ◽  
pp. 3605-3619 ◽  
Author(s):  
C. Willis ◽  
R. A. Back

Preparation of di-imide by passing hydrazine vapor through a microwave discharge yields mixtures with NH3 containing typically about 15% N2H2, estimated from the gases evolved on decomposition. The behavior of the mixture (which melts at −65 °C) on warming from −196 to −30 °C suggests a strong interaction between the components. Measurements of magnetic susceptibility and e.p.r. experiments showed that N2H2 is not strongly paramagnetic, which with other observations points to a singlet rather than a triplet ground-state.Di-imide can be vaporized efficiently, together with NH3, by rapid warming, and the vapor is surprisingly long-lived, with a typical half-life of several minutes at room temperature. The near-u.v. (3200–4400 Å) absorption spectrum of the vapor was photographed; it shows well-defined but diffuse bands, with εmax = 6(± 3) at 3450 Å.Di-imide decomposes at room temperature in two ways:[Formula: see text][Formula: see text]Formation of NH3 was not observed but cannot be ruled out. The decomposition of the vapor is complicated by a sizeable and variable decomposition that occurs rapidly during the vaporization. The stoichiometry of this and the vapor-phase decomposition depends on total pressure and di-imide concentration. The kinetics of the decomposition of the vapor were studied from 22 to 200 °C by following the disappearance of N2H2 by absorption of light at 3450 Å, or the formation of N2H4 by absorption at 2400 Å, and by mass spectrometry. The kinetics are complex and can be either first- or second-order, or mixed, depending on surface conditions. The effect of olefin additives on the decomposition was studied, and is also complex.Mechanisms for the decomposition are discussed, including the possible role of trans-cis isomerization. The relatively long lifetime found for di-imide in the gas phase suggests that it may be an important intermediate in many reactions of hydronitrogen systems.


1994 ◽  
Vol 9 (12) ◽  
pp. 3022-3024 ◽  
Author(s):  
D. Jung ◽  
S.M. Bedair

Self-limited growth of InAs at 480 °C is achieved by a rotating substrate method with a specially designed susceptor. The residual precursors and the boundary layer are removed by the mechanical shear-off. Prevention of the precursor carryover and the gas-phase decomposition are thought to result in the self-limited growth of InAs at temperatures as high as 480 °C.


1999 ◽  
Vol 64 (11) ◽  
pp. 3861-3866 ◽  
Author(s):  
Martin Sarobe ◽  
Leonardus W. Jenneskens ◽  
Ralph G. B. Steggink ◽  
Tom Visser

1971 ◽  
Vol 24 (10) ◽  
pp. 2031
Author(s):  
DA Kairaitis ◽  
VR Stimson

The gas-phase decomposition of ethyl bromide at 423� in the presence of both ethylene and hydrogen bromide has been investigated. These additives, which are also the products, each influence the rate strongly but in opposite ways. The variation of initial rate with reactant pressure is given by (P in cm) ������������� k1 (min-1) = 15.2x10-3+19.5x10-3(PEtBrPHBr/PEne)1/2 This has been interpreted in terms of a unimolecular decomposition together with a bromine atom carried chain reaction with simple steps that involve the products. Some insight into the unaccompanied decomposition has been gained. Some remarks about the role of olefinic inhibitors in reactions producing hydrogen bromide have been made.


2010 ◽  
Vol 645-648 ◽  
pp. 127-130 ◽  
Author(s):  
Nikoletta Jegenyes ◽  
Jean Lorenzzi ◽  
Véronique Soulière ◽  
Jacques Dazord ◽  
François Cauwet ◽  
...  

Starting from 3C-SiC(111) layers grown by Vapour-Liquid-Solid mechanism, homoepitaxial growth by Chemical Vapour Deposition was carried out on top of these seeds. The effect of the growth temperature and of the C/Si ratio in the gas phase was investigated on the surface morphology, the roughness and the defect density. It was found that the initial highly step-bunched surface of the VLS seeds could be greatly smoothen using appropriate conditions. These conditions were also found to reduce significantly the defect size and/or density at the surface.


1993 ◽  
Vol 312 ◽  
Author(s):  
Sarah R. Kurtz ◽  
J. M. Olson ◽  
D. J. Arent ◽  
A. E. Kibbler ◽  
K. A. Bertness

AbstractThe band gap of Ga0.5In0.5P is studied as a function of growth temperature, growth rate, and substrate misorientation. As each of these parameters is independently varied the band gap first decreases, then increases, resulting in “U” shaped curves. Each “U” shaped curve shifts if any other growth parameter is varied. The data presented here can be divided into two regions of parameter space. In the low temperature, low substrate misorientation, high growth rate region, the band gap is shown to decrease with increasing growth temperature, decreasing growth rate, and increasing substrate misorientation. In the high temperature, high substrate misorientation, low growth rate region, the opposite trends are observed. The implications of these data on the ordering mechanism are discussed.


ChemInform ◽  
2010 ◽  
Vol 30 (33) ◽  
pp. no-no
Author(s):  
Martin Sarobe ◽  
Leonardus W. Jenneskens ◽  
Ralph G. B. Steggink ◽  
Tom Visser

1985 ◽  
Vol 49 ◽  
Author(s):  
Vikram Daial ◽  
James F. Booker ◽  
Mark Leonard

AbstractWe describe the preparation and electronic and optical properties of amorphous (Si, Ge) alloys. A—(Si, Ge):H alloys were prepared by glow discharge decomposition of SiH4 and GeH4. The bandgap was varied between 1.78 and 1.42 eV by changing the GeH4:SiH4 ratio in the gas phase. We find a distinct influence of growth temperature on electronic properties. Films grown at low temperatures (200–250C) tendto have much lower photo conductivity than films grown at higher temperatures (300–325C). The electron (μ τ) products of high temperature films are general> 1X10–7 cm2/V. We also obtain very sharp valence band tails in a—(Si, Ge):H alloys, with slopes of ∼ 40 meV. The hole (μ τ) product is generally ∼1–2X10–8 cm2/V. All these properties suffer a catastrophic decline when bandgap is reduced below about 1.5 eV.


1972 ◽  
Vol 50 (13) ◽  
pp. 2010-2016 ◽  
Author(s):  
B. L. Kalra ◽  
A. R. Knight

The photodecomposition of cyclohexane sensitized by Cd(3P1) atoms has been studied in the vapor phase at 355 °C. The primary decomposition gives hydrogen atoms and cyclohexyl radicals. The volatile products of the decomposition are H2, cyclohexene, propylene, ethane, ethylene, methane, propane, butadiene, and methylcyclopentane. Products other than H2 and cyclo-C6H10 arise from unimolecular reactions of cyclohexyl radicals, the most important such process being the production of propylene and allyl radicals. Hydrogen yields decrease rapidly with time because of H-atom scavenging reactions involving olefinic products. The quantum yield of molecular hydrogen formation at the shortest exposure time examined is 0.53.


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