Electronic Structures for (Si)m (GaP)n Superlattices
Keyword(s):
Band Gap
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ABSTRACTThis paper reports on a tight-binding calculation of the band structures of the Si-GaP superlattice (SL) systems with emphasis on the results of the band gap properties. This calculation finds that the SLs grown onto the [110] or [111] oriented substrate do not produce direct gap materials. On the other hand, some of the [001] oriented SLs become direct gap materials when either an interface (IF) state is created at the P and Si IF, or a confined state in the Si occurs with only Ga and Si atoms forming all the IF.
2009 ◽
Vol 155
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pp. 87-104
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2013 ◽
Vol 27
(17)
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pp. 1350131
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1999 ◽
Vol 173
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pp. 249-254
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1969 ◽
Vol 27
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pp. 6-7
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1980 ◽
Vol 38
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pp. 30-33
2005 ◽
Vol 19
(3)
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pp. 129-132
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