Temperature Dependence of a-Si:H Nip Diodes
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ABSTRACTWe analyse the temperature dependence of the forward characteristics of a-Si:H nip diodes, which are characterised by a well defined exponential region at low bias and space charge limited current at higher bias. At each bias, the temperature dependence of the diodes shows a well defined activation energy and a linear dependence on bias exists for both the activation energy and exponential prefactor. We describe these phenomena with a first order temperature expansion of the diode quality factor n and present a physical interpretation in terms of electron and hole recombination in the i-layer.
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2006 ◽
Vol 514-516
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pp. 53-57
1990 ◽
Vol 51
(13)
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pp. 1489-1499
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1969 ◽
Vol 27
(3)
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pp. 237-240
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1981 ◽
Vol 42
(C4)
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pp. C4-451-C4-454
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