Vibrational Spectra of a-Si:H Obtained by Pds

1991 ◽  
Vol 219 ◽  
Author(s):  
E. Lotter ◽  
M. B. Schubert ◽  
M. Heintze ◽  
G. H. Bauer

ABSTRACTIn the energy range below mid-gap, absorption spectra obtained by photothermal deflection spectroscopy (PDS) show much higher values than data evaluated from photo-current measurements. This difference can now be explained as an additional absorption arising from combined vibrational excitation of molecular hydrogen and Si-H stretching modes, which can occur when the H2 molecule is deformed in a collision with Si-H. Down to lower energies, our samples absorb even stronger than in mid-gap. Extension of spectral scans down to photon energies of 0.4 eV shows that this results from absorption of the high energy wings of the collision induced H2 absorption, which is superimposed by the first overtone of the Si-H and Si-H2 stretching modes. The analysis of the H2 absorption profile and strength on samples as grown and annealed gives evidence that molecular hydrogen is enclosed in small cavities and polarized by anisotropic environment in as-grown material while it is concentrated in larger voids under high pressure after annealing above 350°C.

1992 ◽  
Vol 258 ◽  
Author(s):  
E. Lotter ◽  
G.H. Bauer

ABSTRACTApplying PDS in the energy range from 3000 to 9000 cm-1 considerably improves the sensitivity of vibrational spectroscopy of thin films. In a-SiC:H we have found a large number of absorption features not seen before, which give new insight in structural and compositional properties of these alloys.In a-SiC:H, in addition to the fundamental and the first and second overtone of C-H stretching modes, O-H vibrations occur at 3500 cm-1 and allow a very sensitive detection of chemical degradation of films due to in-diffusion of water. Combined excitation of C-H stretching and C-H wagging or bending modes give rise to a modified interpretation of the origin of the C-H related absorption features observed in methane based a-SiC:H. The induced absorption of molecular hydrogen together with a band at 7000 cm-1, which results from a combined excitation of C-H bonds and H2 molecules colliding with the C-H, indicates that the amount of H2 increases with C alloying. The C-H + H2 combination mode is very strong compared to the corresponding Si-H + H2 peak observed in pure a-Si:H and signalizes mat a considerable amount of the molecular hydrogen enclosed in voids, containing CH3 or CH2 groups.


2021 ◽  
Vol 23 (15) ◽  
pp. 9325-9336
Author(s):  
Akio Yoshinaka ◽  
Serge Desgreniers ◽  
Anguang Hu

Raman and IR vibrational spectra confirm two molecular units associated with the monoclinic unit cell of nitroethane under high pressure. Raman spectra are extremely sensitive to predicted effects of unit cell distortion due to changes in H-bonding.


1985 ◽  
Vol 77-78 ◽  
pp. 201-212 ◽  
Author(s):  
Y.J Chabal ◽  
C.K.N Patel

1990 ◽  
Vol 68 (6) ◽  
pp. 2719-2722 ◽  
Author(s):  
A. Matsumuro ◽  
M. Kobayashi ◽  
T. Kikegawa ◽  
M. Senoo

1991 ◽  
Vol 43 (7) ◽  
pp. 3548-3552 ◽  
Author(s):  
Yuheng Zhang ◽  
Andrew W. Ross ◽  
Manfred Fink

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
S. Ktifa ◽  
M. Ghrib ◽  
F. Saadallah ◽  
H. Ezzaouia ◽  
N. Yacoubi

We have studied the optical properties of nanocrystalline silicon (nc-Si) film deposited by plasma enhancement chemical vapor deposition (PECVD) on porous aluminum structure using, respectively, the Photothermal Deflection Spectroscopy (PDS) and Photoluminescence (PL). The aim of this work is to investigate the influence of anodisation current on the optical properties of the porous aluminum silicon layers (PASL). The morphology characterization studied by atomic force microscopy (AFM) technique has shown that the grain size of (nc-Si) increases with the anodisation current. However, a band gap shift of the energy gap was observed.


2008 ◽  
Vol 103 (9) ◽  
pp. 094906 ◽  
Author(s):  
Adam R. Krause ◽  
Charles Van Neste ◽  
Larry Senesac ◽  
Thomas Thundat ◽  
Eric Finot

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