Photoluhi Nescence of Inas/InAsPSb and InAs/Heterojunctions

ABSTRACTPhotol uminescence of p-P InAs/InAsPSb and InAs/InAl AsSb heterojunctions grown by LPE method was studied at liquid helium temperature. The recombination spectra contained a new broad band lying between the substrate and the layer lines which was identified as an emission from the interface. This line is characterized by a strong blue shift when the excitation intensity increases. The intensities of bulk and interface lines show an unusual dependence on the pumping power. On the basis of experimental findings the interface line is attributed to emission from electrons confined at the interface due to reflection of elecctrons moving above the barrier.