Non-Destructive Analysis of Thin III-V Epitaxial Layers Using a Tabletop Double Crystal X-Ray Diffractometer

1990 ◽  
Vol 208 ◽  
Author(s):  
R. N. Sacks
Keyword(s):  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Glancing Angle ◽  
Destructive Analysis ◽  
Excellent Method ◽  
Commercial Software Package ◽  
Non Destructive

ABSTRACTSome of today's most promising and interesting semiconductor devices use only a few thin epitaxial layers of III-V materials, where each layer may be only 100 to 1,000A thick. There is a need for fast, accurate, non-destructive analysis techniques for these structures. Double-crystal x-ray diffraction has proven to be an excellent method for measuring composition, thickness, interface sharpness, and overall crystalline quality of III-V heterostructures. Data is presented on the use of a Bede QC1 automated table-top double-crystal diffractometer for the analysis of (AI,Ga)As, (ln,Ga)As, and GaAs epitaxial layers grown by Molecular Beam Epitaxy (MBE). It is shown that this technique can directly detect and analyze single layers of (In,Ga)As as thin as 200A, and in some cases, can indirectly detect layers of GaAs or (AI,Ga)As as thin as 100A without unusual measures such as glancing angle diffraction. The rocking curve results are compared with values predicted by RHEED intensity oscillation measurements, and with computer simulations using a commercial software package.

X-Ray Characterisation of Boron Delta Layers in Si and SiGe

1991 ◽  
Vol 220 ◽  
Author(s):  
A. R. Powell ◽  
R. A. Kubiak ◽  
T. E. Whall ◽  
E. H. C. Parker ◽  
D. K. Bowen
Keyword(s):  
High Temperature ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Carrier Confinement ◽  
Delta Layer ◽  
Non Destructive ◽  
Sheet Density

ABSTRACTWe demonstrate the growth, by MBE, of high sheet density B delta layers in both Si and SiGe epitaxial layers. Double Crystal X-Ray Diffraction is shown to be a non-destructive method of characterising the width of very narrow (0.3 nm) delta layers and the sheet density of the activated B. The ability of delta layers to withstand high temperature anneals is considered and it is found that a 750 °C anneal for 1 hour broadens the delta layer to beyond the width required for carrier confinement.

CdTe Films Grown on InSb Substrates by Organometallic Epitaxy

1986 ◽  
Vol 90 ◽  
Author(s):  
I. B. Bhat ◽  
N. R. Taskar ◽  
J. Ayers ◽  
K. Patel ◽  
S. K. Ghandhi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Cdte Films ◽  
Secondary Ion ◽  
Cdte Growth

ABSTRACTCadmium telluride layers were grown on InSb substrates by organometallic vapor phase epitaxy and examined using secondary ion mass spectrometry (SIMS), photoluminescence (Pb) and double crystal x-ray diffraction (DCD). The substrate temperature and the nature of the surface prior to growth are shown to be the most important parameters which influence the quality of CdTe layers. Growth on diethyltelluride (DETe) stabilized InSb substrates resulted in CdTe growth with a misorientation of about 4 minutes of arc with respect to the substrates. On the other hand, the grown layers followed the orientation of the substrates when a dimethylcadmium (DMCd) stabilized InSb was used. Growth at 350°C resulted in the smallest x-ray rocking curve (DCRC) full width at half maximum (FWHM) of about 20 arc seconds.

Effectiveness of Non Destructive Physical Analysis Method Using X-ray CT Imaging

2009 ◽  
Author(s):  
Akira Mizoguchi ◽  
Koichiro Takeuchi
Keyword(s):  
Ct Images ◽  
Physical Analysis ◽  
Nondestructive Analysis ◽  
X Ray ◽  
Destructive Analysis ◽  
X Ray Computed ◽  
Analytical Result ◽  
Test Use ◽  
Non Destructive

Abstract Now we are attempting to apply non destructive analysis from evaluation tests or failure analysis to acceptance tests or production tests. Needless to say non destructive analysis has an advantage of conserving the state of samples and the reducing the time of analysis as compared to conventional methods with destructive physical analysis. Moreover, we are paying attention to the following reasons for nondestructive physical analysis. It is difficult to keep the reproducibility of the analysis because of the high skill level required for destructive physical analysis. On the other hand, high reproducibility can be easily achieved by fixing the condition or parameters of the device during nondestructive analysis when performed by tools like X-ray. Moreover, we expect that neither the analytical result nor the quality of the nondestructive analysis depends upon the worker's capability. In this paper we will discuss the following two items from the viewpoint of quality assurance. 1. The method of the screening for fake parts (1) The procedure flow for the production discontinued parts (2) The comparison and examination between the diagnostic using X-ray computed tomography (X-ray CT) images and various examinations (3) Other observation cases using X-ray CT images 2. Effectiveness and consideration in reliability evaluation test using X-ray CT image (1) Comparison of observation cases with a variety of jointing points in parts (2) Consideration of application of nondestructive observation technique in reliability test Use of X-ray CT images is effective in diagnosing the quality of the product or the process. Moreover, we find that use of X-ray CT images is effective for the improvement of the reproducibility of the evaluation examination. Then we find that use of X-ray CT images can reduce the time of evaluation examination too.

X-Ray DCD and EPMA Measurements of Al Concentration in Epitaxial AlxGa1-xAs/GaAs Layers

1992 ◽  
Vol 36 ◽  
pp. 221-229
Author(s):  
D.A. Macquistan ◽  
I.C. Bassignana ◽  
A.J. SpringThorpe ◽  
R. Packwood ◽  
V. Moore
Keyword(s):  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Al Content ◽  
The Relationship ◽  
Composition Measurements

AbstractDouble Crystal X-Ray Diffraction (DCD) is often used to determine the Al content of AlxGa1-xAs/GaAs epitaxial layers. Assessing composition from a measurement of mismatch is problematic because it invokes a number of assumptions. This study bypasses these difficulties by comparing the measurement of mismatch directly with Al composition measurements made by electronprobe microanalysis. A study of coherent epitaxial AlxGa1-xAs layers showed that mismatch varies linearly with composition. The equation Al (x) = |ΔΘ| / 368 summarizes the relationship over the coherent range, where |ΔΘ| is measured in arc seconds.

High Resolution Digital X-Ray Rocking Curve Topography

1986 ◽  
Vol 30 ◽  
pp. 527-535 ◽  
Author(s):  
T.S. Ananthanarayanan ◽  
W.E. Mayo ◽  
R.G. Rosemeier
Keyword(s):  
Defect Structure ◽  
Semiconductor Device ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Rocking Curve ◽  
Crystalline Materials ◽  
Digital Implementation ◽  
X Ray ◽  
Rapid Characterization ◽  
Non Destructive

AbstractThis study presents a unique and novel enhancement of the double crystal diffractometer which allows topographic mapping of X-ray diffraction rocking curve half widths at about 100-150μm spatial resolution. This technique can be very effectively utilized to map micro-lattice strain fields in crystalline materials. The current focus will be on the application of a recently developed digital implementation for the rapid characterization of defect structure and distribution in various semiconductor materials.Digital Automated Rocking Curve (DARC) topography has been successfully applied for characterizing defect structure in materials such as: GaAs, Si, AlGaAs, HgMnTe, HgCdTe, CdTe, Al, Inconnel, Steels, BaF2 PbS, PbSe, etc. The non-intrusive (non- contact & non-destructive) nature of the DARC technique allows its use in studing several phenomena such as corrosion fatigue, recrystallization, grain growth, etc., in situ. DARC topography has been used for isolating regions of non-uniform dislocation density on various materials. It is envisioned that this highly sophisticated, yet simple to operate, system will improve semiconductor-device yield significantly.The high strain sensitivity of the technique results from combination of the highly monochromated and collimated X-ray probe beani, the State of the art linear position-sensitive detector (LPSD) and the high-precision specimen goniometer.

In-Depth Distribution of Stresses Measured by Multireflection Grazing Incidence Diffraction

2013 ◽  
Vol 772 ◽  
pp. 143-147
Author(s):  
Marianna Marciszko ◽  
Andrzej Stanisławczyk ◽  
Andrzej Baczmanski ◽  
Krzysztof Wierzbanowski ◽  
Wilfrid Seiler ◽  
...  
Keyword(s):  
Depth Distribution ◽  
Grazing Incidence ◽  
Inverse Laplace Transform ◽  
Stress Profile ◽  
X Ray Diffraction ◽  
X Ray ◽  
Grazing Incidence Diffraction ◽  
Destructive Analysis ◽  
Sample Range ◽  
Non Destructive

The geometry based on the multireflection grazing incidence X-ray diffraction (called the MGIXD method) can be applied to measure residual stresses. Using this method, it is possible to perform a non-destructive analysis of the heterogeneous stresses for different and well defined volumes below the surface of the sample (range of several mm). As the result the average values of stresses weighted by absorption of X-ray radiation are measured. In this work the stress profile as a function of depth for mechanically polished Ti and Al samples were calculated from MGIXD data using inverse Laplace transform.

Investigation on quality of cubic GaN/GaAs(100) by double-crystal X-ray diffraction

1999 ◽  
Vol 42 (5) ◽  
pp. 517-522
Author(s):  
Dapeng Xu ◽  
Rutian Wang ◽  
Hui Yang ◽  
Lianxi Zheng ◽  
Jianbin Li ◽  
...  
Keyword(s):  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Cubic Gan

A method for the non-destructive analysis of gradients of mechanical stresses by X-ray diffraction measurements at fixed penetration/information depths

2006 ◽  
Vol 39 (5) ◽  
pp. 633-646 ◽  
Author(s):  
A. Kumar ◽  
U. Welzel ◽  
E. J. Mittemeijer
Keyword(s):  
Nickel Layer ◽  
Depth Gradient ◽  
X Ray Diffraction ◽  
X Ray ◽  
Stress Measurements ◽  
Information Depth ◽  
Depth Control ◽  
Destructive Analysis ◽  
Sputter Deposited ◽  
Non Destructive

A rigorous measurement strategy for (X-ray) diffraction stress measurements at fixed penetration/information depths has been developed. Thereby errors caused by lack of penetration-depth control in traditional (X-ray) diffraction (sin2ψ) measurements have been annulled. The range of accessible penetration/information depths and experimental aspects have been discussed. As a practical example, the depth gradient of the state of residual stress in a sputter-deposited nickel layer of 2 µm thickness has been investigated by diffraction stress measurements with uncontrolled penetration/information depth and two controlled penetration/information depths corresponding to about one quarter and one tenth of the layer thickness, respectively. The decrease of the planar tensile stress in the direction towards the surface could be well established quantitatively.

{224} Plane X-Ray Diffraction Study of GaAs on Si Wafers Using a Conventional Double Crystal Diffractometer

1987 ◽  
Vol 91 ◽  
Author(s):  
J.W. Lee ◽  
D.K. Bowen ◽  
J.P. Salerno
Keyword(s):  
Incident Angle ◽  
Wafer Surface ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Near Surface ◽  
Rocking Curve ◽  
X Ray ◽  
Gaas On Si ◽  
Plane Diffraction

ABSTRACTIn an effort to evaluate the near surface crystal quality of GaAs on Si wafers, {224} plane diffraction were investigated using a conventional double crystal x-ray diffractometer without any high intensity radiation source. The x-ray incident angle to wafer surface varied from 3.6 to 9.6 degrees for different {224} planes due to the substrate tilt angle of 3 degrees. The GaAs to Si rocking curve intensity ratio increased significantly as the incident angle decreased. For the diffraction with 3.6 degree incident angle, only the GaAs peak was detected from the 3.5 um thick GaAs on Si wafer and the GaAs peak became narrower. These indicates that this conventional x-ray diffraction technique is applicable for the near surface quality evaluation of GaAs on Si wafers.

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