The Chemistry and Packaging of Nanocomposite Confined Arrays

1990 ◽  
Vol 206 ◽  
Author(s):  
Galen D. Stucky

ABSTRACTThe miniaturization of electronic and optic devices has revolutionized response times, energy loss and transport efficiency. An additional bonus is that as one approaches the nanosize regime the presence or absence of a few atoms and the geometrical disposition of each atom can significantly modify electronic and photonic properties. This control can be further supplemented by “packaging” assemblies of atoms or molecules into thin film or nanocomposite bulk materials to define surface states, cluster environment and geometry, intercluster interactions, and consequently, a wide tunable range of optical and charge carrier responses.The chemist is presented with an intriguing challenge. First the clusters must be unisized with identical geometries. Secondly, the atom or molecular assemblies should ideally have perfect periodicity in order to rigorously define optoelectronic densities and intercluster tunnelling. A third requirement is that the nanocomposite be processable, generally in the form of thin films or single crystals. Numerous approaches are being undertaken in achieve these goals, including molecular beam and atomic layer epitaxy, molecular sieve inclusion chemistry, molecular capping of inorganic clusters, porous glass and aerosol synthesis. This paper presents a brief review of the interface chemistry associated with nanophase confinement and packaging and some features of three dimensional surface confinement using molecular sieves and zeolites.

1995 ◽  
Vol 399 ◽  
Author(s):  
J.C. Ferrer ◽  
A. Cornet ◽  
F. Peiró ◽  
J.R. Morante ◽  
T. Utzmeier ◽  
...  

ABSTRACTIn this paper we report on the morphology of InSb layers grown by atomic layer molecular beam epitaxy (ALMBE) onto InP substrates at low temperatures (330<T<400°C), comparing the nature and densities of defects with those found in ALMBE InSb films grown over InSb/InP buffer layers grown by molecular beam epitaxy (MBE). The main types of defects for ALMBE direct layers are threading dislocations and stacking faults with similar defect densities along both á110ñ directions. The inclusion of the intermediate InSb/InP MBE grown buffer layers leads to lower threading dislocation densities but higher and anisotropic stacking fault distribution. Moreover, different types of three-dimensional defects appear, which are associated with pyramidal or truncated pyramidal hillocks on the surface. These defects, consisting in twins associations are originated at the InSb/InP MBE interface and they are induced by an anomalous growth of InSb layers. In all the cases, the strain caused by the large lattice mismatch is accommodated by means of a pure edge-type misfit dislocation network placed at the interface.


1994 ◽  
Vol 339 ◽  
Author(s):  
Robert F. Davis ◽  
K. S. Ailey ◽  
R. S. Kern ◽  
D. J. Kester ◽  
Z. Sitar ◽  
...  

ABSTRACTThe morphology and interface chemistry occurring during the initial deposition of BN, AlN and GaN films via metal evaporation and N2 decomposition under UHV conditions have been determined. FTIR spectroscopy and TEM revealed the consecutive deposition of an initial 20Å layer of a-BN, 20–60Å of oriented h-BN, and a final layer of polycrystalline c-BN. This sequence is attributed primarily to increasing intrinsic compressive stress in the films. XPS analysis revealed the growth of GaN on sapphire to occur via the Stranski-Krastanov mode; growth on SiC showed characteristics of three-dimensional growth. AlN grew layer-by-layer on both substrates. Vicinal 6H-SiC(0001) substrate surfaces contain closely spaced, single bilayer steps. During deposition of Si and C at 1050°C, 6H layers initially form and step bunching occurs. The latter phenomenon results in more widely spaced steps, the nucleation of 3C-SiC both on the new terraces and at the larger steps and formation of double position boundaries. The C/Si ratio in the gaseous reactants also affects the occurrence of these three phenomena.


SPIN ◽  
2011 ◽  
Vol 01 (01) ◽  
pp. 21-25 ◽  
Author(s):  
CUI-ZU CHANG ◽  
KE HE ◽  
LI-LI WANG ◽  
XU-CUN MA ◽  
MIN-HAO LIU ◽  
...  

Insulating substrates are crucial for electrical transport study and room-temperature application of topological insulator films at thickness of only several nanometers. High-quality quantum well films of Bi 2 Se 3, a typical three-dimensional topological insulator, have been grown on α- Al 2 O 3 (sapphire) (0001) by molecular beam epitaxy. The films exhibit well-defined quantum well states and surface states, suggesting the uniform thickness over macroscopic area. The Bi 2 Se 3 thin films on sapphire (0001) provide a good system to study low-dimensional physics of topological insulators since conduction contribution from the substrate is negligibly small.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Qiang Wang ◽  
Yong Ge ◽  
Hong-xiang Sun ◽  
Haoran Xue ◽  
Ding Jia ◽  
...  

AbstractCrystalline materials can host topological lattice defects that are robust against local deformations, and such defects can interact in interesting ways with the topological features of the underlying band structure. We design and implement a three dimensional acoustic Weyl metamaterial hosting robust modes bound to a one-dimensional topological lattice defect. The modes are related to topological features of the bulk bands, and carry nonzero orbital angular momentum locked to the direction of propagation. They span a range of axial wavenumbers defined by the projections of two bulk Weyl points to a one-dimensional subspace, in a manner analogous to the formation of Fermi arc surface states. We use acoustic experiments to probe their dispersion relation, orbital angular momentum locked waveguiding, and ability to emit acoustic vortices into free space. These results point to new possibilities for creating and exploiting topological modes in three-dimensional structures through the interplay between band topology in momentum space and topological lattice defects in real space.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuta Saito ◽  
Shogo Hatayama ◽  
Yi Shuang ◽  
Paul Fons ◽  
Alexander V. Kolobov ◽  
...  

AbstractTwo-dimensional (2D) van der Waals (vdW) materials possess a crystal structure in which a covalently-bonded few atomic-layer motif forms a single unit with individual motifs being weakly bound to each other by vdW forces. Cr2Ge2Te6 is known as a 2D vdW ferromagnetic insulator as well as a potential phase change material for non-volatile memory applications. Here, we provide evidence for a dimensional transformation in the chemical bonding from a randomly bonded three-dimensional (3D) disordered amorphous phase to a 2D bonded vdW crystalline phase. A counterintuitive metastable “quasi-layered” state during crystallization that exhibits both “long-range order and short-range disorder” with respect to atomic alignment clearly distinguishes the system from conventional materials. This unusual behavior is thought to originate from the 2D nature of the crystalline phase. These observations provide insight into the crystallization mechanism of layered materials in general, and consequently, will be useful for the realization of 2D vdW material-based functional nanoelectronic device applications.


2004 ◽  
Vol 269 (2-4) ◽  
pp. 181-186 ◽  
Author(s):  
G.X. Shi ◽  
P. Jin ◽  
B. Xu ◽  
C.M. Li ◽  
C.X. Cui ◽  
...  

2011 ◽  
Vol 334 (1) ◽  
pp. 113-117 ◽  
Author(s):  
Kevin Goodman ◽  
Vladimir Protasenko ◽  
Jai Verma ◽  
Tom Kosel ◽  
Grace Xing ◽  
...  

1998 ◽  
Vol 72 (9) ◽  
pp. 1104-1106 ◽  
Author(s):  
M. Godlewski ◽  
T. Wojtowicz ◽  
G. Karczewski ◽  
J. Kossut ◽  
J. P. Bergman ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Nishchay A. Isaac ◽  
Johannes Reiprich ◽  
Leslie Schlag ◽  
Pedro H. O. Moreira ◽  
Mostafa Baloochi ◽  
...  

AbstractThis study demonstrates the fabrication of self-aligning three-dimensional (3D) platinum bridges for ammonia gas sensing using gas-phase electrodeposition. This deposition scheme can guide charged nanoparticles to predetermined locations on a surface with sub-micrometer resolution. A shutter-free deposition is possible, preventing the use of additional steps for lift-off and improving material yield. This method uses a spark discharge-based platinum nanoparticle source in combination with sequentially biased surface electrodes and charged photoresist patterns on a glass substrate. In this way, the parallel growth of multiple sensing nodes, in this case 3D self-aligning nanoparticle-based bridges, is accomplished. An array containing 360 locally grown bridges made out of 5 nm platinum nanoparticles is fabricated. The high surface-to-volume ratio of the 3D bridge morphology enables fast response and room temperature operated sensing capabilities. The bridges are preconditioned for ~ 24 h in nitrogen gas before being used for performance testing, ensuring drift-free sensor performance. In this study, platinum bridges are demonstrated to detect ammonia (NH3) with concentrations between 1400 and 100 ppm. The sensing mechanism, response times, cross-sensitivity, selectivity, and sensor stability are discussed. The device showed a sensor response of ~ 4% at 100 ppm NH3 with a 70% response time of 8 min at room temperature.


2015 ◽  
Vol 242 ◽  
pp. 51-60 ◽  
Author(s):  
Meng Tao

Surface states have hindered and degraded many semiconductor devices since the Bardeen era. Surface states originate from dangling bonds on the surface. This paper discusses a generic solution to surface states, i.e. valence-mending passivation. For the Si (100) surface, a single atomic layer of valence-mending sulfur, selenium or tellurium can terminate ~99% of the dangling bonds, while group VII fluorine or chlorine can terminate the remaining 1%. Valence-mending passivation of Si (100) has been demonstrated using CVD, MBE and solution passivation. The keys to valence-mending passivation include an atomically-clean Si (100) surface for passivation and precisely one monolayer of valence-mending atoms on the surface. The passivated surface exhibits unprecedented properties. Electronically the Schottky barrier height between various metals and valence-mended Si (100) now follows more closely the Mott-Schottky theory. With metals of extreme workfunctions, new records for low and high Schottky barriers are created on Si (100). The highest barrier so far is 1.14 eV, i.e. a larger-than-bandgap barrier, and the lowest barrier is below 0.08 eV and potentially negative. Chemically silicidation between metal and valence-mended Si (100) is suppressed up to 500 °C, and the thermally-stable record Schottky barriers enable their applications in nanoelectronic, optoelectronic and photovoltaic devices. Another application is transition metal dichalcogenides. Valence-mended Si (100) is an ideal starting surface for growth of dichalcogenides, as it provides only van der Waals bonding to the dichalcogenide.


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