Mechanism of Plasma-Enhanced Deposition of Silicon Dioxide from Teos/O2 Mixtures

1990 ◽  
Vol 204 ◽  
Author(s):  
Gregory B. Raupp ◽  
Timothy S. Cale ◽  
H. Peter ◽  
W. Hey
Keyword(s):  
Oxygen Atom ◽  
Silicon Dioxide ◽  
Deposition Rate ◽  
Total Pressure ◽  
Surface Recombination ◽  
Film Deposition ◽  
Rf Power ◽  
Atom Concentration ◽  
Wafer Temperature ◽  
Rate Determining Step

ABSTRACTThe deposition rate of silicon dioxide from TEOS/02 capacitively-coupled plasmas increases with increasing applied rf power, increasing total pressure and decreasing wafer temperature. These dependences can be explained by a mechanism in which deposition occurs through both an ionassisted and an oxygen atom initiated pathway. The ion-induced deposition rate increases with increasing rf power density and decreasing total pressure, and is independent of wafer temperature. Assuming a well-mixed plasma, and using literature values for reaction rate parameters and rate forms for oxygen plasma reactions, the rate of atom-induced deposition was found to be independent of temperature and TEOS concentration and directly proportional to oxygen atom concentration. The model suggests that the apparent negative activation energy for deposition results from competition between deposition and thermally-activated atomic oxygen surface recombination. The derived deposition rate form is consistent with an Eley-Rideal mechanism in which the rate determining step for film deposition is oxidative attack of adsorbed TEOS or TEOS fragments by a activated oxygen.

Oxygen Atom Induced Deposition of Silicon Dioxide

1992 ◽  
Vol 282 ◽  
Author(s):  
Dimitri A. Levedakis ◽  
Gregory B. Raupp
Keyword(s):  
Silicon Dioxide ◽  
Deposition Rate ◽  
Total Pressure ◽  
Oxygen Radical ◽  
Flow Ratio ◽  
One Dimensional ◽  
Substrate Temperatures ◽  
Oxygen Discharge ◽  
Deposited Films ◽  
Deposition Conditions

ABSTRACTSilicon dioxide was deposited from tetraethylorthosilicate (TEOS) and remote microwave oxygen plasma on a heated silicon substrate in a cold-wall reactor. The deposition rate and film quality were examined as functions of substrate temperature, total pressure, absorbed plasma power and O2:TEOS flow ratio. The deposition reaction exhibited an activation energy of approximately 10 kJ/mol for substrate temperatures in the range of 323–623 K. The deposition rate reached a maximum with increasing total pressure. The rate was found to be a near-linear function of the absorbed microwave power. At fixedabsorbed power the rate reached a maximum with increasing O2:TEOS flow ratio. A one-dimensional mathematical model was developed to predict the oxygen radical concentration at the exit of the afterglow region of the oxygen discharge. Comparisons of the predicted oxygen radical concentrations with the deposition rates at corresponding deposition conditions supports the view that the overall SiO2 deposition reaction is largely controlled by the concentration of oxygen radicals. The average refractive index ofthe deposited films was 1.466 ± 0.011. Fourier transform infra-red (FTIR) transmission spectra showed significant concentrations of hydroxyls in the deposited films.

Amorphous Silicon Deposition Diagnostics Using Coherent Anti-Stokes Raman Spectroscopy

1987 ◽  
Vol 95 ◽  
Author(s):  
Y. H. Shing ◽  
J. W. Perry ◽  
D. R. Coulter ◽  
G. Radhakrishnan
Keyword(s):  
Raman Spectroscopy ◽  
Glow Discharge ◽  
Deposition Rate ◽  
Flow Rate ◽  
Primary Electron ◽  
Film Deposition ◽  
Low Flow ◽  
Rf Power ◽  
Film Deposition Rate ◽  
Anti Stokes

AbstractIn situ process diagnostics using coherent anti-Stokes Raman spectroscopy (CARS) have been performed under state-of-the-art a-Si:H film deposition conditions in a reactor designed for a-Si:H solar cell fabrication. The silane plasma of device-quality a-Si:H film depositions was monitored by measuring the silane ν1 band CARS spectrum to determine the depletion induced by the RF glow discharge. The silane depletion is linearly dependent on the RF power in the region of 4 to 12 W with a slope of O.5%/mWcm−2. The depletion is also dependent on the SiH4 flow rate starting with a 50% depletion at a low flow rate of 5.6 sccm and asymptotically approaching an 8% depletion at a high flow rate of 80 sccm. The a-Si:H film deposition rate is systematically measured as a function of the flow rate and the RF power. Linear correlations between the silane depletion and the film deposition rate are observed. The results are discussed in terms of primary electron impact dissociations of silane and the residence time of SiH4 molecule in the glow discharge region.

RF Power Dependence of the Material Properties of PECVD Silicon Dioxide

1989 ◽  
Vol 165 ◽  
Author(s):  
J. D. Chapple-Sokol ◽  
E. Tiemey ◽  
J. Batey
Keyword(s):  
Nitrous Oxide ◽  
Silicon Dioxide ◽  
Power Density ◽  
Material Properties ◽  
Deposition Process ◽  
Power Dependence ◽  
Rf Power ◽  
Deposition Rates ◽  
Physical Integrity ◽  
Silane Concentration

AbstractSilicon dioxide films deposited from the PECVD reaction of silane and nitrous oxide in the presence of helium were studied to determine the effects of RF power on the deposition process. Increased RF power density yielded oxides which were structurally and chemically more homogeneous. The combination of elevated power density with increased silane concentration resulted in the deposition of films of high electrical and physical integrity at high deposition rates.

Technological Features of the Thick Tin Film Deposition by with Magnetron Sputtering Form Liquid-Phase Target

2018 ◽  
Vol 781 ◽  
pp. 8-13 ◽  
Author(s):  
Mariya Makarova ◽  
Konstantin Moiseev ◽  
Alexander Nazarenko ◽  
Petr Luchnikov ◽  
Galina Dalskaya ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Amorphous Structure ◽  
Film Deposition ◽  
High Deposition Rate ◽  
Crucible Material ◽  
Tin Films ◽  
X Ray ◽  
Tin Film

Technological features of obtaining of tin films in a vacuum by liquid-phase target magnetron sputtering were reviewed. With high deposition rate the white color tin coating with amorphous structure is formed on the substrate. X-ray microanalysis of the obtained tin films showed the presence of micro-and nanoparticles of an impurity of the crucible material in the structure of the films. The use of the tantalum crucible with liquid-phase target magnetron sputtering with deposition rate of 3.2 μm / min allows obtaining ultra-pure, continuous, homogeneous tin film on a stationary substrate without impurity material of the crucible.

Properties of SiO2 Films Fabricated by Microwave Ecr Plasma Processing with and Without Energetic Particle Bombardment During Film Deposition Part I. Fabrication Processes and Physical Properties

1991 ◽  
Vol 223 ◽  
Author(s):  
T. T. Chau ◽  
S. R. Mejia ◽  
K. C. Kao
Keyword(s):  
Silicon Dioxide ◽  
Particle Bombardment ◽  
Energetic Particle ◽  
Deposition Temperature ◽  
Film Growth ◽  
Plasma Processing ◽  
Film Deposition ◽  
Ecr Plasma ◽  
Group A ◽  
Group B

ABSTRACTSilicon dioxide (SiO2) films were fabricated by microwave ECR plasma processing. Two groups of films were fabricated; group A with the substrates placed in a position directly facing the plasma so that the substrates as well as the on-growing films were subjected to bombardment of energetic particles produced in the plasma, and group B with the substrates placed in a processing chamber physically separated from the plasma chamber in order to prevent or suppress the damaging effects resulting from these energetic particle bombardment. The systems used for fabricating these two different groups of samples are described. The films were deposited at various deposition temperatures. On the basis of the deposition rate as a function of deposition temperature the film growth for group A samples is due mainly to mass-limited reaction, and that for group B samples is due to surface rate limited reaction. The stoichiometric level for group A does not change with deposition temperature though the films density increases with increasing deposition temperature. However, group B samples exhibit an off-stoichiometric property but they become highly stoichiometric as the deposition temperature is increased beyond 200 °C

Variation of thin film deposition rate on SS 314 with the variation of gas flow rate using CVD

2011 ◽  
Vol 63 (6) ◽  
pp. 433-439 ◽  
Author(s):  
Mohammad Asaduzzaman Chowdhury ◽  
Dewan Muhammad Nuruzzaman ◽  
Khaled Khalil ◽  
Mohammad Lutfar Rahaman
Keyword(s):  
Thin Film ◽  
Deposition Rate ◽  
Flow Rate ◽  
Gas Flow ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Gas Flow Rate ◽  
Film Deposition Rate

Emission spectra study of plasma enhanced chemical vapor deposition of intrinsic, n+, and p+ amorphous silicon thin films

2013 ◽  
Vol 1536 ◽  
pp. 133-138
Author(s):  
I-Syuan Lee ◽  
Yue Kuo
Keyword(s):  
Deposition Rate ◽  
Gas Flow ◽  
Emission Spectra ◽  
Chemical Vapor ◽  
Critical Factor ◽  
Optical Emission ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Silicon Thin Films ◽  
Deposition Processes

ABSTRACTThe PECVD intrinsic, n+, and p+ a-Si:H thin film deposition processes have been studied by the optical emission spectroscope to monitor the plasma phase chemistry. Process parameters, such as the plasma power, pressure, and gas flow rate, were correlated to SiH*, Hα*, and Hβ* optical intensities. For all films, the deposition rate increases with the increase of the SiH* intensity. For the doped films, the Hα*/SiH* ratio is a critical factor affecting the resistivity. The existence of PH3 or B2H6 in the feed stream enhances the deposition rate. Changes of the free radicals intensities can be used to explain variation of film characteristics under different deposition conditions.

scholarly journals Improvement of Thin Film Adhesion Due to Bombardment by Fast Argon Atoms

Coatings ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 303 ◽  
Author(s):  
Sergey Grigoriev ◽  
Alexander Metel ◽  
Marina Volosova ◽  
Yury Melnik
Keyword(s):  
Deposition Rate ◽  
Hollow Cathode ◽  
Film Deposition ◽  
Glow Discharge Plasma ◽  
Cathode Sputtering ◽  
Copper Target ◽  
Film Adhesion ◽  
Thin Film Adhesion ◽  
Emissive Grid ◽  
Argon Ions

A new hollow cathode sputtering system is used for beam-assisted deposition of thin films on dielectric substrates. A copper target placed at the hollow cathode bottom is uniformly sputtered by argon ions from the glow discharge plasma filling the cathode. Through an emissive grid, sputtered copper atoms leave the cathode together with accelerated argon ions. On their way to the substrate, the ions—due to charge exchange collisions—turn into fast argon atoms bombarding the growing film. With increasing argon ion energy, continuous bombardment results in the film adhesion improvement and reduction of the deposition rate down to zero, at an energy of about 2 keV. The pulsed bombardment does not influence the film deposition rate, and results in a monotonic growth of the film adhesion up to 20 MPa when increasing the fast atom energy up to 10 keV.

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