scholarly journals The Deposition of Nickel Boride Thin Films by Borane and Metallaborane Cluster Compounds

1990 ◽  
Vol 204 ◽  
Author(s):  
John A. Glass ◽  
Shreyas Kher ◽  
Yoon-Gi Kim ◽  
P.A. Dowben ◽  
James T. Spencer
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Kerr Effect ◽  
Cluster Compounds ◽  
Metal Boride ◽  
New Materials ◽  
Nickel Boride ◽  
Torque Magnetometry ◽  
Unique Source ◽  
Source Materials

ABSTRACTThe deposition of high purity and controlled stoichiometry metal boride thin-film materials has recently received considerable interest. Borane clusters and their corresponding metal complexes are currently being investigated in our laboratories for their utility as unique source materials for the formation of metallic boride thin films by MOCVD. Variable composition nickel boride thin films ranging from 0.1 micron to several microns have been prepared. These new materials have been characterized by SEM, AES and XES. The magnetic properties of these new films have been investigated with torque magnetometry and magneto-optic Kerr effect magnetometry.

The Chemical Vapor Deposoitin of Pure Nickel and Nickel Boride Thin Films from Borane Cluster Compounds

1991 ◽  
Vol 250 ◽  
Author(s):  
Shreyas Kher ◽  
James T. Spencer
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Chemical Vapor ◽  
Nickel Chloride ◽  
Reaction Chamber ◽  
Cluster Compounds ◽  
Nickel Boride ◽  
Metal Metal ◽  
Unique Source ◽  
Borane Cluster

AbstractSeveral borane cluster compounds, such as pentaborane(9) and their corresponding metal complexes have been investigated in our laboratory for their utility as unique source materials for synthesizing metal/metal boride thin films by MOCVD. In this paper we report the preparation of thin films of nickel boride from the thermal decomposition of nido- pentaborane( 9) in the presence of anhydrous nickel chloride [NiCl2] in the vapor phase. Crystalline nickel boride thin films of controlled composition ranging from 0.1 to several microns have been readily prepared by controlling the temperature and the flow rate of the pentaborane(9) into the reaction chamber. The nickel boride films on GaAs were thermally annealed to form the Ni7B3 phase as hexagonal crystals in a Ni3B matrix. These films have been characterized by AA, AES, EDXA, SEM, XRD and electron diffraction. The phases were determined primarily by X-ray and electron diffraction experiments.

Improved Growth Of Srga2s4 Thin Film Electroluminescence Phosphors

1996 ◽  
Vol 424 ◽  
Author(s):  
D. Braunger ◽  
T. A. Oberacker ◽  
U. Troppenz ◽  
H.-W. Schock
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
The Other ◽  
Crystal Quality ◽  
Cerium Chloride ◽  
Wave Excitation ◽  
Color Coordinates ◽  
Square Wave ◽  
True Blue ◽  
Source Materials

AbstractCerium activated ternary strontium thiogallate phosphor thin films have been deposited by multi-source evaporation of elemental strontium, gallium and sulfur as source materials. Cerium chloride (CeCI3) has been used as activator starting material. In order to avoid SrS as well as Ga phase segregations elemental In as well as compounds, such as LiF, NaF, LiCl, and SrCI2, have been investigated as possible growth enhancing agents.Coevaporation of indium resulted in an improved crystallization with the drawback of an increased reabsorption of the cerium emission. The other additives lead to improved crystal quality combined with true-blue cathodoluminescence (CL) performance (C.I.E. color coordinates of up to 0. 14/0.12) which proves phosphor layers without any SrS phase segregations.Thin film electroluminescent (TFEL) devices with SrGa2S4:CeCl3 phosphor layers prepared with LiF as additive exhibit highest ever reported L40 luminances of 78 cd/m2 and luminous efficiencies of 0.017 lm/W at a transferred charge of 1 μ;C/cm2 with 1 kHz / 50 μs bipolar square wave excitation.

The Deposition of Aluminum and Aluminum Boride Thin Films by Aluminaborane Cluster Compounds

1990 ◽  
Vol 204 ◽  
Author(s):  
John A. Glass ◽  
Shreyas Kher ◽  
Stephen D. Hersee ◽  
G. Ramseyer ◽  
James T. Spencer
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Cluster Compounds ◽  
Semiconductor Materials ◽  
Aluminum Boride ◽  
Borane Cluster ◽  
Active Investigation ◽  
Deposition Conditions

ABSTRACTThe preparation of aluminum-containing thin film materials by MOCVD and MOMBE for use in III-V semiconductor materials, such as HEMT devices, is currently under active investigation. The preparation of uniform, conformal aluminum and boron containing thin film materials from the chemical vapor deposition (CVD) of aluminum borane cluster precursor compounds has been studied. A variety of substrates, deposition conditions and aluminaborane precursors have been explored and their effect on film composition, growth rate and thin film morphology has been investigated. The thermal depositions of aluminum and boron-containing thin films from aluminum borohydride, AI(BH4)3, on copper, SiO2 and GaAs are reported. Boron incorporation in the films vary depending on substrate temperature, aluminaborane flow and the presence or absence of a H2 carrier. These films have been characterized by SEM, AES and XES.

scholarly journals Thin Films of Tolane Aggregates for Faraday Rotation: Materials and Measurement

Coatings ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 669 ◽  
Author(s):  
Maarten Eerdekens ◽  
Ismael López-Duarte ◽  
Gunther Hennrich ◽  
Thierry Verbiest
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Faraday Rotation ◽  
Single Molecules ◽  
Spectroscopic Studies ◽  
New Materials ◽  
Practical Applications ◽  
Xrd Techniques

We present organic, diamagnetic materials based on structurally simple (hetero-)tolane derivatives. They form crystalline thin-film aggregates that are suitable for Faraday rotation (FR) spectroscopy. The resulting new materials are characterized appropriately by common spectroscopic (NMR, UV-Vis), microscopy (POM), and XRD techniques. The spectroscopic studies give extremely high FR activities, thus making these materials promising candidates for future practical applications. Other than a proper explanation, we insist on the complexity of designing efficient FR materials starting from single molecules.

scholarly journals Thin Films of Tolane Aggregates for Faraday Rotation: Materials and Measurement

2019 ◽  
Author(s):  
maarten eerdekens ◽  
ismael lopez-duarte ◽  
gunther hennrich ◽  
thierry verbiest
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Faraday Rotation ◽  
Single Molecules ◽  
Spectroscopic Studies ◽  
New Materials ◽  
Practical Applications ◽  
Xrd Techniques

We present organic, diamagnetic materials based on structurally simple (hetero-) tolane derivatives. They form crystalline thin-film aggregates that are suitable for Faraday rotation (FR) spectroscopy. The resulting new materials are characterized appropriately by common spectroscopic (NMR, UV-Vis), microscopy (POM), and XRD techniques. The spectroscopic studies give extremely high FR activities thus makes these materials promising candidates for future practical applications. Other than a proper explanation, we insist in the complexity of designing efficient FR materials starting off from single molecules.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

Scanning-probe microscope analysis of optical thin films: A new analytical tool in a manufacturing environment

1994 ◽  
Vol 52 ◽  
pp. 1068-1069
Author(s):  
S. P. Sapers ◽  
R. Clark ◽  
P. Somerville
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Control ◽  
Scanning Probe Microscope ◽  
Scanning Probe ◽  
List Type ◽  
Manufacturing Environment ◽  
Physical Measurements ◽  
Probe Microscope

OCLI is a leading manufacturer of thin films for optical and thermal control applications. The determination of thin film and substrate topography can be a powerful way to obtain information for deposition process design and control, and about the final thin film device properties. At OCLI we use a scanning probe microscope (SPM) in the analytical lab to obtain qualitative and quantitative data about thin film and substrate surfaces for applications in production and research and development. This manufacturing environment requires a rapid response, and a large degree of flexibility, which poses special challenges for this emerging technology. The types of information the SPM provides can be broken into three categories:(1)Imaging of surface topography for visualization purposes, especially for samples that are not SEM compatible due to size or material constraints;(2)Examination of sample surface features to make physical measurements such as surface roughness, lateral feature spacing, grain size, and surface area;(3)Determination of physical properties such as surface compliance, i.e. “hardness”, surface frictional forces, surface electrical properties.

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