Surface Chemistry of CVD Reactions Studied by Molecular Beam/Surface Scattering

1990 ◽  
Vol 204 ◽  
Author(s):  
Ming L. Yu ◽  
Ulrich Memmert ◽  
Nicholas I. Buchan ◽  
Thomas F. Kuech

ABSTRACTA molecular beam/surface scattering experiment in an ultrahigh vacuum is conceptually a simulation of a CVD reactor without the interference from gas phase and wall reactions. The surface chemistry can be studied in real-time during the deposition reaction at the desired temperature. In our experiment, we used pulsed molecular beams of the reactants and a mass spectrometer to monitor In real-time the reaction products evolving from the substrate surface. With this arrangement, the reaction probability of the molecules can readily be determined by measuring the unreacted fraction of the molecular beam. The reaction pathways can be deduced from the Identification of the reaction products, while their time-evolutions give the kinetic parameters. We shall illustrate this technique by our study on the reactions of trimethylgallium and triethylgallium on GaAs as related to the metalorganic CVD and atomic layer epitaxy of GaAs.

Vacuum ◽  
1981 ◽  
Vol 31 (10-12) ◽  
pp. 647-657 ◽  
Author(s):  
F Tommasini

2020 ◽  
Author(s):  
Chenbiao Xu ◽  
Timothy Minton

Molecular beam-surface scattering experiments have been used to study the effect of N atoms on the reactivity of O atoms with a high-temperature carbon surface to produce CO. The CO flux produced from bombardment of a vitreous carbon surface by a beam containing N and O atoms was compared with the CO flux produced from bombardment by beams containing either N or O atoms. The presence of small mole fractions of N atoms of 0.02-0.08 enhanced the reactivity of O atoms by a factor of 1.4-1.6 in the range of surface temperatures from 1100 to 1700 K. A detailed explanation of the observed results requires more study, but it appears that N atoms can act as a catalyst to increase the reactivity of O with carbon and that a relatively low flux of N atoms may be sufficient to saturate the catalytic effect. This catalytic effect seems to be fairly insensitive to the surface temperature, at least over the temperature range used in this study. This observation is important in the development of finite-rate models of air-carbon ablation during hypersonic flight.


1993 ◽  
Vol 334 ◽  
Author(s):  
K. Ploska ◽  
W. Richter ◽  
F. Reinhardt ◽  
J. JÖnsson ◽  
J. Rumberg ◽  
...  

AbstractReflectance anisotropy spectroscopy (RAS) is presented as real time analytical tool for metalorganic vapourphase epitaxy (MOVPE) of III-V-semiconductors. This optical method derives its surface sensitivity from the anisotropy of surface structures. It is shown that it is possible to monitor with RAS the oxide desorption from the substrate and that the substrate surface conditions thereafter, still in the pregrowth stage, can be correlated with certain reconstructions of the (001)-surfaces of InP and GaAs. The latter is possible through simultaneous RAS and RHEED measurements during MBE (molecular beam epitaxy) or MOMBE (metalorganic molecular beam epitaxy). Characteristic spectral features are also observed for other binary or ternary III-V-semiconductors. Time resolved measurements during growth give monolayer resolution for the growth rate in the case of GaAs. In the study of heterointerface growth exchange reactions between As and P together with their corresponding reaction time constants can be monitored and conclusions for the epitaxial growth procedure can be drawn.


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