Flip-Chip Bump Bonding Reliability and Process Improvement

1990 ◽  
Vol 203 ◽  
Author(s):  
Wei H. Koh ◽  
S. Mayemura ◽  
W. Kuipers

ABSTRACTLong term reliability of flip-chip bump bonding for application in infrared detector interconnection is investigated. The effectiveness of a thin film nickel as diffusion barrier for reducing indium-gold intermetallic formation is studied by accelerated life test and destructive physical analysis. A new interconnect structure replacing the conventional bump-to-bump configuration is described.

2018 ◽  
Vol 789 ◽  
pp. 120-125
Author(s):  
Young Ju Jeon ◽  
Hyeong Seok Han ◽  
Ming Yung Shin ◽  
Ok Ju Kwak ◽  
Hyun Taeck Lim

According to expansion of electric automobiles, the multi-layer nano thin film glass withheating source is researched to retain safety driving for winter. Generally, the tungsten wire is usedas a heating source of electric automobile glass. Due to its low visibility, silver (Ag) particles areresearched for years. Ag is widely used as a material of heater in the automobile industry since ithas relatively high heat and electrical conductivities. However, the multi-layer nano thin film glassusing Ag particles is under development stage and is not verified in the field, so recall and claimcan be raised. In this study, we will find the potential failure mechanism of the multi-layer nano thinfilm glass based on the properties, and then suggest accelerated life test method to verify 15 years inthe automobile application.


1980 ◽  
Vol 6 (3-4) ◽  
pp. 219-222
Author(s):  
S. J. Osadnik ◽  
T. Berlicki

A comparative study is made of Al2O3layers formed at 400℃ in molten KNO3and Al2O3formed at room temperature in a common solution of ammonium pentaborate in ethylene glycol. At 400℃ and constant current (0.5 mA/cm2) the linear anodization range is limited to 2.7 V by scintillation and local oxide breakdowns. Nonporous 200 Å thick (0.4μF/cm2) oxide layers were produced at 2.0 V (400℃) and 8 V (20℃). Electron diffraction indicated aγ-Al2O3structure at an anodization temperature of 400℃ and amorphous structure at room anodization temp. The initial values of tanδwere100 · 10−4 ± 40 · 10−4and400 · 10−4 ± 200 · 10−4respectively.Capacitance and tanδmeasurements during accelerated life test indicated that the films produced at 400℃ are not superior to those formed at room temperature. In both cases a diffusion of metal at the metal-oxide interface seems to be the main ageing mechanism.The internal electrical field measured by the C-V method was unchanged inγ-Al2O3layers during the life test.


2014 ◽  
Vol 35 (5) ◽  
pp. 054010 ◽  
Author(s):  
Ningning Sun ◽  
Manqing Tan ◽  
Ping Li ◽  
Jian Jiao ◽  
Xiaofeng Guo ◽  
...  

2013 ◽  
Vol 800 ◽  
pp. 205-209 ◽  
Author(s):  
De Sheng Li ◽  
Nian Yu Zou ◽  
Yun Cui Zhang ◽  
Xiao Yang He ◽  
Yi Yang

The study of LED reliability becomes more and more important with LED widely used in various areas, and accelerated life test (ALT) as an element of reliability test is widely used to predict the lifetime of LED. In this paper, ALTs have been carried out at various current levels and various temperature levels. In the current ALT experiment, three kinds of stressing currents were demonstrated for 1W white LEDs and lumen flux of the tested LEDs were studied, and based on Eyting model, lifetime of the tested LEDs is calculated about 6.86×105h. In the temperature ALT experiment, two kinds of stressing temperature were demonstrated for the same type of white LEDs and lumen flux were also studied, and based on Arrhenius model, lifetime of the tested LEDs is calculated about 7.41×105h. In addition, the color shifting velocity is faster than lumens depreciation velocity was observed in our experiment, which means the lifetime evaluating of white LED should be paid more attention.


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