Agglomeration of Cobalt Silicide Films

1990 ◽  
Vol 202 ◽  
Author(s):  
Z. G. Xiao ◽  
G. A. Rozgonyi ◽  
C. A. Canovai ◽  
C. M. Osburn

ABSTRACTThe agglomeration of Co silicide films formed on Si substrates processed with different Co film thickness was investigated by TEM, XRD, and four-point-probe measurements. It was found that thermal grooving always accompanies the film formation, while islanding can occur during high temperature thermal stability testing, or during formation of very thin films at moderate temperatures. In addition to whole film agglomeration, partial agglomeration on the top of the film has been observed, which is prominent and important for thin films. A theoretical model of agglomeration for silicide films is presented, which shows that when the ratio of grain size to film thickness is smaller than a critical value, the film will not lose its continuity. Also, grain boundary migration was found to have a suppressing effect on thermal grooving. Both a small grain size and a low grain boundary energy are shown to be favorable for improving the thermal stability.

1990 ◽  
Vol 202 ◽  
Author(s):  
Thomas Nolan ◽  
Robert Beyers ◽  
Robert Sinclair

ABSTRACTAn equilibrium model for agglomeration based upon the mechanism of grain boundary grooving in polycrystalline thin films is suggested. It involves an energy balance between surface, interface, and grain boundary energies, and predicts parameters which will influence the onset of agglomeration. It has been determined that small grain size, low grain boundary energy, high film surface and interface energies, and growth of single crystal epitaxial layers should promote resistance to agglomeration. Polycrystalline TiSi2 thin films deposited on Si substrates have been observed using cross-section TEM. The micrographs provide evidence that, for these films, the grain boundary grooving mechanism is dominant and most of the modeling assumptions are valid.


Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.


1992 ◽  
Vol 260 ◽  
Author(s):  
S. Pramanick ◽  
Yu. N. Erokhin ◽  
B. K. Patnaik ◽  
G. A. Rozgonyi ◽  
J. P. Gambino

ABSTRACTWe have extended the recent work1,2 on grain boundary grooving, agglomeration and islanding during the reaction of thin Co films on single crystal Si<100> substrates (source/drain contacts) to the case of poly silicon substrates3 (gate contact and local interconnects). The stability of 27 to 50 nm CoSi2 films formed via rapid thermal annealing on polysilicon substrates with and without P+ or Ge+ implantation was examined using XTEM, RBS, XRD, and Four-probe measurements. For an undoped polysilicon, partial agglomeration of a 30 nm CoSi2 film has been observed, similar to that seen on a single crystal Si substrate.2For heavily Phosphorus doped polysilicon, a transition from low resistance, stoichiometric cobalt disilicide films (700 °C, 10 sec RTA) to high resistance films at 700 °C, 30 sec RTA (600–1000 Ω per square and discontinuous suicide grain growth) has been observed. Concurrent suicide formation on preamorphized polysilicon (Ge+ I/I and no anneal) has been found to suppress agglomeration of nanoscale cobalt suicide layers, since small grain size and low grain boundary energy are favorable for improving thermal stability4. These continuous layers also exhibited the lowest sheet resistance corresponding to a resistivity of ≤ 21 μΩ-cm.


2021 ◽  
Vol 67 (2 Mar-Apr) ◽  
pp. 263
Author(s):  
T. O. Daniel ◽  
U. E. Uno ◽  
K. U. Isah ◽  
U. Ahmadu

This study is focused on the investigation of SnS thin film for transistor application. Electron trap which is associated with grain boundary effect affects the electrical conductivity of SnS semiconductor thin film thereby militating the attainment of the threshold voltage required for transistor operation. Grain size and grain boundary is a function of a semiconductor’s thickness. SnS semiconductor thin films of 0.20, 0.25, 0.30, 0.35, 0.40 μm were deposited using aerosol assisted chemical vapour deposition on glass substrates. Profilometry, Scanning electron microscope, Energy dispersive X-ray spectroscopy and hall measurement were used to characterise the composition, microstructure and electrical properties of the SnS thin film.  SnS thin films were found to consist of Sn and S elements whose composition varied with increase in thickness. The film conductivity was found to vary with grain size and grain boundary which is a function of the film thickness. The SnS film of 0.4 μm thickness shows optimal grain growth with a grain size of 130.31 nm signifying an optimum for the as deposited SnS films as the larger grains reduces the number of grain boundaries and charge trap density which allows charge carriers to move freely in the lattice thereby causing a reduction in resistivity and increase in conductivity of the films which is essential in obtaining the threshold voltage for a transistor semiconductor channel layer operation. The carrier concentration of due to low resistivity of 3.612 ×105 Ωcm of 0.4 μm SnS thin film thickness is optimum and favours the attainment of the threshold voltage for a field effect transistor operation hence the application of SnS thin film as a semiconductor channel layer in a field effect transistor.


2011 ◽  
Vol 57 (205) ◽  
pp. 942-948 ◽  
Author(s):  
Jens Roessiger ◽  
Paul D. Bons ◽  
Albert Griera ◽  
Mark W. Jessell ◽  
Lynn Evans ◽  
...  

AbstractStatic (or ‘normal’) grain growth, i.e. grain boundary migration driven solely by grain boundary energy, is considered to be an important process in polar ice. Many ice-core studies report a continual increase in average grain size with depth in the upper hundreds of metres of ice sheets, while at deeper levels grain size appears to reach a steady state as a consequence of a balance between grain growth and grain-size reduction by dynamic recrystallization. The growth factorkin the normal grain growth law is important for any process where grain growth plays a role, and it is normally assumed to be a temperature-dependent material property. Here we show, using numerical simulations with the program Elle, that the factorkalso incorporates the effect of the microstructure on grain growth. For example, a change in grain-size distribution from normal to log-normal in a thin section is found to correspond to an increase inkby a factor of 3.5.


2001 ◽  
Vol 670 ◽  
Author(s):  
Min-Joo Kim ◽  
Hyo-Jick Choi ◽  
Dae-Hong Ko ◽  
Ja-Hum Ku ◽  
Siyoung Choi ◽  
...  

ABSTRACTThe silicidation reactions and thermal stability of Co silicide formed from Co-Ta/Si systems have been investigated. In case of Co-Ta alloy process, the formation of low resistive CoSi2phase is delayed to about 660°C, as compared to conventional Co/Si system. Moreover, the presence of Ta in Co-Ta alloy films reduces the silicidation reaction rate, resulting in the strong preferential orientation in CoSi2 films. Upon high temperature post annealing in the furnace, the sheet resistance of Co-silicide formed from Co/Si systems increases significantly, while that of Co-Ta/Si systems maintains low. This is due to the formation of TaSi2 at the grain boundaries and surface of Co-silicide films, which prevents the grain boundary migration thereby slowing the agglomeration. Therefore, from our research, increased thermal stability of Co-silicide films was successfully obtained from Co-Ta alloy process.


1999 ◽  
Vol 594 ◽  
Author(s):  
R. Spolenak ◽  
C. A. Volkert ◽  
K. Takahashi ◽  
S. Fiorillo ◽  
J. Miner ◽  
...  

AbstractIt is well known that the mechanical properties of thin films depend critically on film thickness However, the contributions from film thickness and grain size are difficult to separate, because they typically scale with each other. In one study by Venkatraman and Bravman, Al films, which were thinned using anodic oxidation to reduce film thickness without changing grain size, showed a clear increase in yield stress with decreasing film thickness.We have performed a similar study on both electroplated and sputtered Cu films by using chemical-mechanical polishing (CMP) to reduce the film thickness without changing the grain size. Stress-temperature curves were measured for both the electroplated and sputtered Cu films with thicknesses between 0.1 and 1.8 microns using a laser scanning wafer curvature technique. The yield stress at room temperature was found to increase with decreasing film thickness for both sets of samples. The sputtered films, however, showed higher yield stresses in comparison to the electroplated films. Most of these differences can be attributed to the different microstructures of the films, which were determined by focused ion beam (FIB) microscopy and x-ray diffraction.


2009 ◽  
Vol 475 (1-2) ◽  
pp. 893-897 ◽  
Author(s):  
Zheng Chen ◽  
Feng Liu ◽  
Wei Yang ◽  
Haifeng Wang ◽  
Gencang Yang ◽  
...  

2021 ◽  
Author(s):  
Mark Coleman ◽  
Bernhard Grasemann ◽  
David Schneider ◽  
Konstantinos Soukis ◽  
Riccardo Graziani

&lt;p&gt;Microstructures may be used to determine the processes, conditions and kinematics under which deformation occurred. For a given set of these variables, different microstructures are observed in various materials due to the material&amp;#8217;s physical properties. Dolomite is a major rock forming mineral, yet the mechanics of dolomite are understudied compared to other ubiquitous minerals such as quartz, feldspar, and calcite. Our new study uses petrographic, structural and electron back scatter diffraction analyses on a series of dolomitic and calcitic mylonites to document differences in deformation styles under similar metamorphic conditions. The Attic-Cycladic Crystalline Complex, Greece, comprises a series of core complexes wherein Miocene low-angle detachment systems offset and juxtapose a footwall of high-pressure metamorphosed rocks against a low-grade hanging wall. This recent tectonic history renders the region an excellent natural laboratory for studying the interplay of the processes that accommodate deformation. The bedrock of Mt. Hymittos, Attica, preserves a pair of ductile-then-brittle normal faults dividing a tripartite tectonostratigraphy. Field observations, mineral assemblages and observable microstructures suggests the tectonic packages decrease in metamorphic grade from upper greenschist facies (~470 &amp;#176;C at 0.8 GPa) in the stratigraphically lowest package to sub-greenschist facies in the stratigraphically highest package. Both low-angle normal faults exhibit cataclastic fault cores that grade into the schists and marbles of their respective hanging walls. The middle and lower tectonostratigraphic packages exhibit dolomitic and calcitic marbles that experienced similar geologic histories of subduction and exhumation. The mineralogically distinct units (calcite vs. dolomite) of the middle package deformed via different mechanisms under the same conditions within the same package and may be contrasted with mineralogically similar units that deformed under higher pressure and temperature conditions in the lower package. In the middle unit, dolomitic rocks are brittlely deformed. Middle unit calcitic marble are mylonitic to ultramylonitic with average grain sizes ranging from 30 to 8 &amp;#956;m. These mylonites evince grain-boundary migration and grain size reduction facilitated by subgrain rotation. Within the lower package, dolomitic and calcitic rocks are both mylonitic to ultramylonitic with grain sizes ranging from 28 to 5 &amp;#956;m and preserve clear crystallographic preferred orientation fabrics. Calcitic mylonites exhibit deformation microstructures similar to those of the middle unit. Distinctively, the dolomitic mylonites of the lower unit reveal ultramylonite bands cross-cutting and overprinting an older coarser mylonitic fabric. Correlated missorientation angles suggest these ultramylonites show evidence for grain size reduction accommodated by microfracturing and subgrain rotation. In other samples the dolomitic ultramylonite is the dominant fabric and is overprinting and causing boudinage of veins and relict coarse mylonite zones. Isolated interstitial calcite grains within dolomite ultramylonites are signatures of localized creep-cavitation processes. Following grain size reduction, grain boundary sliding dominantly accommodated further deformation in the ultramylonitic portions of the samples as indicated by randomly distributed correlated misorientation angles. This study finds that natural deformation of dolomitic rocks may occur by different mechanisms than those identified by published experiments; notably that grain-boundary migration and subgrain rotation may be active in dolomite at much lower temperatures than previously suggested.&lt;/p&gt;


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