The Effect of Photoexcitation on Formation of Radiation Defects in Si

1990 ◽  
Vol 201 ◽  
Author(s):  
V. N. Mordkovich ◽  
A. B. Danilin ◽  
Yu. N. Erokhin ◽  
S. N. Boldyrev
Keyword(s):  
Ion Implantation ◽  
Radiation Damage ◽  
Radiation Defect ◽  
Damage Accumulation ◽  
Defect Formation ◽  
Charge Carriers ◽  
Light Illumination ◽  
Radiation Defects ◽  
Electronic Subsystem ◽  
Nonequilibrium Electron

AbstractPhotoexcitation of the Si electronic subsystem during ion implantation was found to be able to control radiation damage accumulation. Conditions when additional light illumination during ion bombardment suppresses radiation defect formation are determined. The model of effect observed taking into account recombination of nonequilibrium electron and holes is proposed. Coefficient between the change in amount of damage accumulated and the rate of nonequilibrium charge carriers generation is estimated.

Tie Effect of Rare-Earth Elements on the Entroy of Radiation Defects Ionization in N-Type Go

1993 ◽  
Vol 301 ◽  
Author(s):  
V.V. Petrov ◽  
T.D. Kharohenko ◽  
V.Yu. Yavid
Keyword(s):  
Rare Earth ◽  
Rare Earth Elements ◽  
Rare Earth Element ◽  
Radiation Defect ◽  
Earth Element ◽  
Defect Formation ◽  
Fold Increase ◽  
Local Deformation ◽  
Radiation Defects ◽  
Enthalpy And Entropy

ABSTRACTTe analyses of the processes of radiation defect formation in germanium doped with phosphorus in the presence of rare-earth element neodimium and without it has been carried out.It has been shown that the presence of neodimium in n-Ge results in the change of enthalpy and entropy of the major radiation defect ionization (complex with the level being near EB-0.20 eV). The change of enthalpy by 0.03-0.04 eV as well as more than six fold increase of entropy of the complex ionization in Ge:Nd has been stated to be connected with the local deformation of the lattice around defect formed in the process of irradiation.

Dependence of the Carrier Removal Rate in 4H-SiC PN Structures on the Irradiation Temperature

2019 ◽  
Vol 963 ◽  
pp. 730-733
Author(s):  
Alexander A. Lebedev ◽  
Klavdya S. Davydovskaya ◽  
Vitalii V. Kozlovski ◽  
Oleg Korolkov ◽  
Natalja Sleptsuk ◽  
...  
Keyword(s):  
Crystal Lattice ◽  
Radiation Defect ◽  
Room Temperature ◽  
Proton Irradiation ◽  
Defect Formation ◽  
Removal Rate ◽  
Irradiation Temperature ◽  
Structural Defects ◽  
Radiation Defects

The influence of 15 MeV proton irradiation temperatures (room temperature (RT) - 700 ° C) on the processes of defect formation in commercially available 4H-SiC JBS structures has been studied. It has been shown that the carrier removal rate does not depend on the irradiation temperature. At the same time, the irradiation temperature affected on the spectrum of introduced radiation defects. The conclusion about the possible influence of SiC crystal lattice structural defects on the processes of radiation defect formation has been made.

Effect of Illumination on Organic Polymer Thin-Film Transistors

2003 ◽  
Vol 771 ◽  
Author(s):  
Michael C. Hamilton ◽  
Sandrine Martin ◽  
Jerzy Kanicki
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Charge Carriers ◽  
Electrical Performance ◽  
Organic Polymer ◽  
Light Illumination ◽  
Polymer Thin Film ◽  
Channel Region ◽  
White Light Illumination

AbstractWe have investigated the effects of white-light illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs). The OFF-state drain current is significantly increased, while the drain current in the strong accumulation regime is relatively unaffected. At the same time, the threshold voltage is decreased and the subthreshold slope is increased, while the field-effect mobility of the charge carriers is not affected. The observed effects are explained in terms of the photogeneration of free charge carriers in the channel region due to the absorbed photons.

Amorphous Fe-B alloys produced by ion implantation. II. Low-temperature radiation damage

1985 ◽  
Vol 15 (6) ◽  
pp. 1237-1247 ◽  
Author(s):  
A Audouard ◽  
A Benyagoub ◽  
L Thome ◽  
J Chaumont
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Radiation Damage ◽  
Temperature Radiation

scholarly journals Analysis of Radiation Damage in Light Water Reactors: Comparison of Cluster Analysis Methods for the Analysis of Atom Probe Data

2017 ◽  
Vol 23 (2) ◽  
pp. 366-375 ◽  
Author(s):  
Jonathan M. Hyde ◽  
Gérald DaCosta ◽  
Constantinos Hatzoglou ◽  
Hannah Weekes ◽  
Bertrand Radiguet ◽  
...  
Keyword(s):  
Cluster Analysis ◽  
Radiation Damage ◽  
Defect Formation ◽  
Chemical Species ◽  
Atom Probe ◽  
Three Dimensions ◽  
Multiple Sources ◽  
Damage Models ◽  
Combining Data ◽  
Water Reactors

AbstractIrradiation of reactor pressure vessel (RPV) steels causes the formation of nanoscale microstructural features (termed radiation damage), which affect the mechanical properties of the vessel. A key tool for characterizing these nanoscale features is atom probe tomography (APT), due to its high spatial resolution and the ability to identify different chemical species in three dimensions. Microstructural observations using APT can underpin development of a mechanistic understanding of defect formation. However, with atom probe analyses there are currently multiple methods for analyzing the data. This can result in inconsistencies between results obtained from different researchers and unnecessary scatter when combining data from multiple sources. This makes interpretation of results more complex and calibration of radiation damage models challenging. In this work simulations of a range of different microstructures are used to directly compare different cluster analysis algorithms and identify their strengths and weaknesses.

scholarly journals Damage accumulation in ceramics during ion implantation

1986 ◽  
Vol 16 (2-3) ◽  
pp. 212-220 ◽  
Author(s):  
C.J. McHargue ◽  
G.C. Farlow ◽  
G.M. Begun ◽  
J.M. Williams ◽  
C.W. White ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Damage Accumulation

Defect Formation by Ion Implantation in Cz-Si Studied by a Monoenergetic Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Uedono ◽  
Y. Ujihira ◽  
L. Wei ◽  
Y. Tabuki ◽  
S. Tanigawa ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Ion Implantation ◽  
Defect Formation ◽  
Positron Beam ◽  
Low Energy ◽  
Doppler Broadening ◽  
Positron Energy ◽  
Annealing Experiments ◽  
Incident Positron ◽  
Ion Implanted

ABSTRACTVacancy-type defects in ion implanted Si were studied by a monoenergetic positron beam. The depth-distributions of the defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The results showed that a size of vacany-clusters introduced by 150-keV P+-ion implantation was found to be smaller than that introduced by 2-MeV P+-ion implantation. This was attributed to an overlap of collision cascades in low-energy (150 keV) ion implanted specimens. From isochronal annealing experiments for 80-keV B+- and 150-keV P+-ion implanted specimens, the defected region was removed by 1200 °C annealing, however, for 2-MeV P+-implanted specimen, two-types of oxygen-vacancy complexes were found to coexist even after 1200 °C annealing.

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