Characteristics of Metal/PZT/p—Si MIS Capacitors

1990 ◽  
Vol 200 ◽  
Author(s):  
T.S. Kalkur ◽  
George Argos ◽  
Lee Kammerdiner
Keyword(s):  
Lead Zirconate Titanate ◽  
High Frequency ◽  
Lead Zirconate ◽  
Effective Dielectric Constant ◽  
Annealing Conditions ◽  
Pzt Film ◽  
Rapid Thermal Annealer ◽  
Sputter Deposited ◽  
Mis Capacitors

ABSTRACTLead Zirconate Titanate (PZT) thin films have been sputter deposited on p–Si. The patterned PZT films were annealed in a furnace as well as in a rapid thermal annealer. The high frequency characterization of metal–PZT– p– Si capacitors show good Capacitance–Voltage characteristics. The effective dielectric constant of PZT on Si was found to be very low and depends on the thickness of the PZT film and the annealing conditions. The high frequency C–V shows hysteresis which is due to the injection of charges across the interface.

Study of PZT Film Stress in Multilayer Structures for MEMS Devices

1999 ◽  
Vol 605 ◽  
Author(s):  
E. Zakar ◽  
M. Dubey ◽  
R. Polcawich ◽  
B. Piekarski ◽  
R. Piekarz ◽  
...  
Keyword(s):  
Residual Stress ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Film Stress ◽  
Dielectric Films ◽  
Mems Devices ◽  
Annealing Conditions ◽  
Pzt Film ◽  
Final Stress

AbstractResidual stress in the multilayer Si/Dielectric/Pt/PZT/Pt stack was measured as a function of annealing conditions, sol-gel derived PZT (Lead Zirconate Titanate -52/48) thickness, SiO2 and/or Si3N4 dielectric films thickness. Residual stress in the Si3N4 layer varied from -201 to +1275 MPa and from -430 to + 511 MPa in the Si02 layer. Furnace annealing of the bottom Pt film reduced the stress over rapid thermal annealing (RTA). Stress due to PZT films was the controlling factor for the final stress of the stack. Upon increasing PZT thickness, stress became less tensile for Si3N4 dielectric and more tensile for Si02. The deposition of the top Pt on PZT followed by RTA at 300°C in nitrogen had a minimal effect on the final stress of the stack. The average tensile stress for the Si/Si02 /Pt/PZT/Pt and Si/Si3N4/Pt/PZT/Pt stacks was 140 ± 25 and 476±235 MPa respectively.

Paste Extrusion 3D Printing and Characterization of Lead Zirconate Titanate Piezoelectric Ceramics

2021 ◽  
Author(s):  
Samuel E. Hall ◽  
Jaime E. Regis ◽  
Anabel Renteria ◽  
Luis A. Chavez ◽  
Luis Delfin ◽  
...  
Keyword(s):  
3D Printing ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Ceramics ◽  
Lead Zirconate ◽  
Zirconate Titanate ◽  
Paste Extrusion

Improvement of Ferroelectric Properties of Lead Zirconate Titanate Thin Films by Ion-substitution using Rare-earth Cations

2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Nakaki ◽  
Hiroshi Uchida ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Property ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Crystal Anisotropy ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Ion Substitution

ABSTRACTRare-earth-substituted tetragonal lead zirconate titanate thin films were synthesized for improving the ferroelectric property of conventional lead zirconate titanate. Thin films of Pb1.00REx (Zr0.40Ti0.60)1-(3x /4)O3 (x = 0.02, RE = Y, Dy, Er and Yb) were deposited on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition (CSD). B-site substitution using rare-earth cations described above enhanced the crystal anisotropy, i.e., ratio of PZT lattice parameters c/a. Remanent polarization (Pr) of PZT film was enhanced by Y3+-, Dy3+- and Er3+-substitution from 20 μC/cm2 up to 26, 25 and 26 μC/cm2 respectively, while ion substitution using Yb3+ degraded the Pr value down to 16 μC/cm2. These films had similar coercive fields (Ec) of around 100 kV/cm. Improving the ferroelectric property of PZT film by rare-earth-substitution would be ascribed to the enhancement of the crystal anisotropy. We concluded that ion substitution using some rare-earth cations, such as Y3+, Dy3+ or Er3+, is one of promising technique for improving the ferroelectric property of PZT film.

Research of the PZT Polarization for Deformable Mirror

2014 ◽  
Vol 609-610 ◽  
pp. 1331-1335
Author(s):  
Jun Jie Chen ◽  
Ying Liu ◽  
Jian Qiang Ma ◽  
Ji Cong Deng ◽  
Bao Qing Li ◽  
...  
Keyword(s):  
Theoretical Analysis ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Coefficient ◽  
Lead Zirconate ◽  
Deformable Mirror ◽  
Pzt Film ◽  
Zirconate Titanate

This paper demonstrates that the deformation of the piezoelectric deformable mirror (DM) is proportional to the transverse piezoelectric coefficient of the lead zirconate titanate (PZT) by the theoretical analysis. The optimal polarization conditions were obtained by experiments to optimize the performance of the DM. After the optimal polarization, the transverse piezoelectric coefficient of the PZT film increases from 350 pm/V to 431 pm/V, which will improve the deformation of the DM.

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