Plasma Etching of PLT Thin Films and Bulk PLZT Using Fluorine- and Chlorine-Based Gases

1990 ◽  
Vol 200 ◽  
Author(s):  
M. R. Poor ◽  
A. M. Hurd ◽  
C. B. Fleddermann ◽  
A. Y. Wu
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Substrate Temperature ◽  
Plasma Etching ◽  
Room Temperature ◽  
Removal Rate ◽  
Ceramic Film ◽  
Wide Range ◽  
Potential Applications ◽  
Silicon Based

ABSTRACTPotential applications for ferroelectric thin films include both electronic and optoelectronic devices. In order to integrate a large number of devices on a single ceramic film or to incorporate ceramic devices with silicon-based integrated circuits, suitable film patterning techniques must be developed. In this study, the use of plasma etching for device patterning of PLT thin films has been explored using a dc hollow cathode discharge with HCl and CF4 etching gases. At room temperature, no etching of material is discernable. As the substrate temperature is increased, however, relatively rapid etching takes place. Etch rates for PLT thin films as high as 6500 Å/hour were measured. Etching occurred in both chlorinated and fluorinated plasmas, but at considerably different rates. The etch rate is enhanced by a factor of six by using a combination of HCl and CF4 in the plasma. After etching, the stoichiometry of the film, measured by energy dispersive spectroscopy (EDS), varied greatly with changes in substrate temperature. Although the removal rate for each element is different, all traces of lead, titanium, and lanthanum can be removed from the substrate over a wide range of plasma etching conditions.

scholarly journals A Slot-Die Technique for the Preparation of Continuous, High-Area, Chitosan-Based Thin Films

Polymers ◽  
2021 ◽  
Vol 13 (10) ◽  
pp. 1566
Author(s):  
Oliver J. Pemble ◽  
Maria Bardosova ◽  
Ian M. Povey ◽  
Martyn E. Pemble
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
High Volume ◽  
Mechanical Anisotropy ◽  
Diverse Range ◽  
Direction Parallel ◽  
High Area ◽  
Wide Range ◽  
Slot Die ◽  
Potential Applications

Chitosan-based films have a diverse range of potential applications but are currently limited in terms of commercial use due to a lack of methods specifically designed to produce thin films in high volumes. To address this limitation directly, hydrogels prepared from chitosan, chitosan-tetraethoxy silane, also known as tetraethyl orthosilicate (TEOS) and chitosan-glutaraldehyde have been used to prepare continuous thin films using a slot-die technique which is described in detail. By way of preliminary analysis of the resulting films for comparison purposes with films made by other methods, the mechanical strength of the films produced was assessed. It was found that as expected, the hybrid films made with TEOS and glutaraldehyde both show a higher yield strength than the films made with chitosan alone. In all cases, the mechanical properties of the films were found to compare very favorably with similar measurements reported in the literature. In order to assess the possible influence of the direction in which the hydrogel passes through the slot-die on the mechanical properties of the films, testing was performed on plain chitosan samples cut in a direction parallel to the direction of travel and perpendicular to this direction. It was found that there was no evidence of any mechanical anisotropy induced by the slot die process. The examples presented here serve to illustrate how the slot-die approach may be used to create high-volume, high-area chitosan-based films cheaply and rapidly. It is suggested that an approach of the type described here may facilitate the use of chitosan-based films for a wide range of important applications.

scholarly journals Giant room temperature elastocaloric effect in metal-free thin-film perovskites

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Cheng Li ◽  
Yu Hui Huang ◽  
Jian-Jun Wang ◽  
Bo Wang ◽  
Yong Jun Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Room Temperature ◽  
Entropy Change ◽  
Stress Change ◽  
Chemical Doping ◽  
Metal Free ◽  
Organic Ferroelectrics ◽  
Potential Applications ◽  
Unit Stress

AbstractSolid-state refrigeration which is environmentally benign has attracted considerable attention. Mechanocaloric (mC) materials, in which the phase transitions can be induced by mechanical stresses, represent one of the most promising types of solid-state caloric materials. Herein, we have developed a thermodynamic phenomenological model and predicted extraordinarily large elastocaloric (eC) strengths for the (111)-oriented metal-free perovskite ferroelectric [MDABCO](NH4)I3 thin-films. The predicted room temperature isothermal eC ΔSeC/Δσ (eC entropy change under unit stress change) and adiabatic eC ΔTeC/Δσ (eC temperature change under unit stress change) for [MDABCO](NH4)I3 are −60.0 J K−1 kg−1 GPa−1 and 17.9 K GPa−1, respectively, which are 20 times higher than the traditional ferroelectric oxides such as BaTiO3 thin films. We have also demonstrated that the eC performance can be improved by reducing the Young’s modulus or enhancing the thermal expansion coefficient (which could be realized through chemical doping, etc.). We expect these discoveries to spur further interest in the potential applications of metal-free organic ferroelectrics materials towards next-generation eC refrigeration devices.

AFM Study of Surface Morphology of Aluminum Nitride Thin Films

1995 ◽  
Vol 388 ◽  
Author(s):  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura ◽  
Shigekazu Hirayama ◽  
Yuusaku Naota
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Single Crystal ◽  
Room Temperature ◽  
Ion Beam ◽  
Soda Lime ◽  
Silicon Single Crystal ◽  
Soda Lime Glass ◽  
Average Roughness

AbstractAluminum nitride (AlN) thin films have been synthesized by ion-beam assisted deposition method. Film deposition has been performed on the substrates of silicon single crystal, soda-lime glass and alumin A. the influence of the substrate roughness on the film roughness is studied. the substrate temperature has been kept at room temperature and 473K and the kinetic energy of the incident nitrogen ion beam and the deposition rate have been fixed to 0.5 keV and 0.07 nm/s, respectively. the microstructure of the synthesized films has been examined by X-ray diffraction (XRD) and the surface morphology has been observed by atomic force microscopy(AFM). IN the XRD patterns of films synthesized at both room temperature and 473K, the diffraction line indicating the alN (10*0) can be discerned and the broad peak composed of two lines indicating the a1N (00*2) and a1N (10*1) planes is also observed. aFM observations for 100 nm films reveal that (1) the surface of the films synthesized on the silicon single crystal and soda-lime glass substrates is uniform and smooth on the nanometer scale, (2) the average roughness of the films synthesized on the alumina substrate is similar to that of the substrate, suggesting the evaluation of the average roughness of the film itself is difficult in the case of the rough substrate, and (3) the average roughness increases with increasing the substrate temperature.

scholarly journals Large Negative Photoresistivity in Amorphous NdNiO3 Film

Coatings ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1411
Author(s):  
Alexandr Stupakov ◽  
Tomas Kocourek ◽  
Natalia Nepomniashchaia ◽  
Marina Tyunina ◽  
Alexandr Dejneka
Keyword(s):  
Energy Density ◽  
Optical Absorption ◽  
Power Density ◽  
Room Temperature ◽  
Amorphous Film ◽  
Amorphous Films ◽  
Metal Insulator ◽  
Wide Range ◽  
Potential Applications

A significant decrease in resistivity by 55% under blue lighting with ~0.4 J·mm−2 energy density is demonstrated in amorphous film of metal-insulator NdNiO3 at room temperature. This large negative photoresistivity contrasts with a small positive photoresistivity of 8% in epitaxial NdNiO3 film under the same illumination conditions. The magnitude of the photoresistivity rises with the increasing power density or decreasing wavelength of light. By combining the analysis of the observed photoresistive effect with optical absorption and the resistivity of the films as a function of temperature, it is shown that photo-stimulated heating determines the photoresistivity in both types of films. Because amorphous films can be easily grown on a wide range of substrates, the demonstrated large photo(thermo)resistivity in such films is attractive for potential applications, e.g., thermal photodetectors and thermistors.

scholarly journals Study on fabrication method of composite oxide by room temperature atomic layer deposition

Impact ◽  
2020 ◽  
Vol 2020 (5) ◽  
pp. 16-18
Author(s):  
Fumihiko Hirose
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Graduate School ◽  
Room Temperature ◽  
Atomic Layer ◽  
Science And Engineering ◽  
Layer Deposition ◽  
Potential Applications ◽  
Properties Of Materials ◽  
Conducting Research

Thin films can be used to improve the surface properties of materials, enhancing elements such as absorption, abrasion resistance and corrosion resistance, for example. These thin films provide the foundation for a variety of applications in various fields and their applications depend on their morphology and stability, which is influenced by how they are deposited. Thin films can be deposited in different ways. One of these is a technology called atomic layer deposition (ALD). Professor Fumihiko Hirose, a scientist based at the Graduate School of Science and Engineering, Yamagata University, Japan, is conducting research on the room temperature ALD of oxide metals. Along with his team, Professor Hirose has developed a new and improved way of performing ALD to create thin films, and the potential applications are endless.

Room-Temperature Ceramic Nanocoating Using Nanosheet Deposition Technique

2013 ◽  
Vol 2013 (CICMT) ◽  
pp. 000014-000018 ◽  
Author(s):  
M. Osada ◽  
T. Sasaki
Keyword(s):  
Room Temperature ◽  
Organic Molecules ◽  
Structural Diversity ◽  
Layer By Layer ◽  
Precise Control ◽  
Langmuir Blodgett ◽  
Wide Range ◽  
Potential Applications ◽  
Layer Assembly ◽  
Selection Of

We present a novel procedure for ceramic nanocoating using oxide nanosheet as a building block. A variety of oxide nanosheets (such as Ti1−δO2, MnO2 and perovsites) were synthesized by delaminating appropriate layered precursors into their molecular single sheets. These nanosheets are exceptionally rich in both structural diversity and electronic properties, with potential applications including conductors, semiconductors, insulators, and ferromagnets. Another attractive aspect is that nanosheets can be organized into various nanoarchitectures by applying solution-based synthetic techniques involving electrostatic layer-by-layer assembly and Langmuir-Blodgett deposition. It is even possible to tailor superlattice assemblies, incorporating into the nanosheet galleries with a wide range of materials such as organic molecules, polymers, and inorganic/metal nanoparticles. Sophisticated functionalities or paper-like devices can be designed through the selection of nanosheets and combining materials, and precise control over their arrangement at the molecular scale.

In2O3 Thin Films Prepared on TiAlN Substrates Using a Triethylindium and Oxygen Mixture

2007 ◽  
Vol 124-126 ◽  
pp. 1597-1600
Author(s):  
Hyoun Woo Kim ◽  
Sun Keun Hwang ◽  
Won Seung Cho ◽  
Tae Gyung Ko ◽  
Seung Yong Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Light Emission ◽  
Xrd Analysis ◽  
Oxygen Mixture ◽  
Photoluminescence Spectra ◽  
Sem Images ◽  
Room Temperature Photoluminescence ◽  
Visible Light Emission

This paper reports the fabrication of indium oxide (In2O3) films using a triethylindium and oxygen mixture. The deposition has been carried out on TiAlN substrates (200-350°C). We have established the correlation between the substrate temperature and the structural properties. The films deposited at 300-350°C were polycrystalline, whereas those deposited at 200°C was close to amorphous. XRD analysis and SEM images indicated that the films grown at 350°C had grained structures with the (222) preferred orientation. The room-temperature photoluminescence spectra of the In2O3 films exhibited a visible light emission.

Correlation of the Stress-Temperature History with Microstructure in A1-0.5Cu and A1-0.15Pd Thin Films

1994 ◽  
Vol 356 ◽  
Author(s):  
D. D. Knorr ◽  
K.P. Rodbell
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Substrate Temperature ◽  
Grain Growth ◽  
Room Temperature ◽  
Temperature History ◽  
Thermal Expansion Mismatch ◽  
Grain Sizes ◽  
Substrate Temperatures ◽  
Precipitate Structure

AbstractBlanket films (1 μm thick) of both A1-0.5Cu and A1-0.15Pd were deposited at room temperature, 150°C, and 300°C. Stress in the as-deposited wafers increased with substrate temperature, as expected from the thermal expansion mismatch on cooling. All conditions were tiicrmally cycled to 450°C three times while continuously monitoring stress. The shapes of the curves were different for the two alloys because precipitates dissolve and reprecipitate in AlCu, but are present over the entire temperature range in AlPd. Lesser differences were evident comparing the stress-temperature behavior for the various substrate temperatures within a single alloy. The precipitate structure also influences the grain growth during thermal cycling, where substantially larger median grain sizes are found in AlCu compared to AlPd.

The Effect of Substrate Temperature on the Room Temperature Ferromagnetism of Co-Doped ZnO Thin Films

2008 ◽  
Vol 37 (5) ◽  
pp. 831-834 ◽  
Author(s):  
Wang Zhuliang ◽  
Li Xiaoli ◽  
Jiang Fengxian ◽  
Tian Baoqiang ◽  
Lü Baohua ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Co Doped

Reactive Sputter Deposition of Highly Oriented AlN Films at Room Temperature

2002 ◽  
Vol 17 (6) ◽  
pp. 1469-1475 ◽  
Author(s):  
G. F. Iriarte ◽  
F. Engelmark ◽  
I. V. Katardjiev
Keyword(s):  
Substrate Temperature ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Electron Bombardment ◽  
Process Conditions ◽  
Gas Composition ◽  
Temperature Bias ◽  
Reactive Sputter Deposition ◽  
Process Pressure ◽  
Wide Range

Textured as well as epitaxial thin AlN films are of great interest for a wide range of electro-acoustic and optoelectronic applications. Reduction of the deposition temperature is of vital importance in a number of applications due to thermal budget limitations. In this work we systematically studied the influence of the process parameters on the film properties and identified the factors leading to improved film quality as well as reduced deposition temperature with pulsed direct current sputtering in an Ar/N2 atmosphere. We demonstrated that fully textured (0002) films can be grown under a wide range of conditions. At the same time the full width at half-maximum (FWHM) of the rocking curve of the (0002) XRD peak was found to vary systematically with process conditions—depostion rate, process pressure, gas composition, and substrate temperature. The best films showed a FWHM of 1.2°. We found that by far the most important factor is the arrival energy of the sputtered Al atoms, which is primarily controlled by the process pressure. We report for the first time that fully textured AlN films with a FWHM of under 2° can be grown at room temperature. Other important factors are the ion and electron bombardment of the films and substrate temperature as well as gas composition, although their influence is not as dramatic. Generally, the film quality increases with temperature. Bias and electron bombardment within a certain range also lead to better films.

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