Preparation and Characterization of Sol-Gel Derived PbTiO3 Thin Layers on GaAs
Keyword(s):
Sol Gel
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ABSTRACTPbTiO3 thin layers were deposited onto GaAs by sol-gel processing. The GaAs substrates were encapsulated with Si3N4 or SiO2 to minimize diffusion problems. Gel layers were heat treated to 350°C for removal of organic species and for the densification of the amorphous gel structure. Rapid thermal processing at 600°C was used to crystallize PbTiO3 into the perovskite structure. SIMS analysis determined limited diffusion of Ga and As into PbTiO3. The fine grain microstructure contained domains.
2002 ◽
Vol 126
(2)
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pp. 161-165
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2008 ◽
Vol 55-57
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pp. 369-372
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2017 ◽
Vol 54
(4)
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pp. 278-284
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